Rashmi Jha

Rashmi Jha

Assoc Professor

Engineering Research Cntr

385

CEAS - Elec Eng & Computer Science - 0030

ERC 385
University of Cincinnati
Cincinnati, Ohio 45220

Professional Summary

Dr. Rashmi Jha is an Associate Professor in Electrical Engineering and Computing Systems Department at the University of Cincinnati. She worked as an Assistant Professor and then Associate Professor in Electrical Engineering and Computer Science Department at the University of Toledo from 2008 to 2015. Before this, she worked as a Process Integration Engineer for 45 nm/32 nm High-k/Metal Gates based Advanced CMOS technology at Semiconductor Research and Development Center, IBM, East Fishkill New York between 2006-2008. She finished her Ph.D. and M.S. in Electrical Engineering from North Carolina State University in 2006 and 2003, respectively, and B.Tech. in Electrical Engineering from Indian Institute of Technology (IIT) Kharagpur, India in 2000. She has more than 13 years of experience in the areas of Solid State Electronic/Nanoelectronic Device Fabrication, Electrical Characterization, Data Analysis, and Device Modeling.  She has been granted 12 US patents and has authored/co-authored several publications in the areas of nanoelectronic devices. She has been a recipient of CAREER Award from the National Science Foundation in 2013, IBM Faculty Award in 2012, IBM Invention Achievement Award in 2007, Materials Research Society's Graduate Student Award in 2006, Applied Materials Fellowship Award in 2005-2006, and the best student paper award nomination in IEEE International Electron Devices Meeting (IEDM) in 2005. Her current research interests lie in the areas of Nanoelectronic Devices Enabled Future Neuromorphic Computing Systems, Resistive Random Access Memory Devices and other Emerging Memory and Logic Devices, Spintronics, Neuroscience and Cognitive Modeling, Neuroelectronics, Emerging Nanoscale Devices Enabled Cyber-Security Systems, Flexible/Invisible Logic and Memory Devices for Wearable Computing, Solid Oxide Battery Devices, and Energy Harvesting Devices.  
 

Education

Ph.D., North Carolina State University Raleigh, NC, USA, 2006 (Electrical Engineering)

M.S., North Carolina State University Raleigh, NC, USA, 2003 (Electrical Engineering)

B.Tech. , Indian Institute of Technology (IIT) Kharagpur, India, 2000 (Electrical Engineering)

Positions and Work Experience

2000 -2002 Software Engineer, Geometric Software Solutions, Pune, India

2002 -2006 Graduate Research Assistant, North Carolina State University, Raleigh, NC, USA

2006 -2008 Process Integration Engineer, Semiconductor Research and Development Center, IBM Corporation, East Fishkill, NY, USA

2008 -2014 Assistant Professor, University of Toledo, Toledo, Ohio, USA

2014 -2015 Associate Professor, University of Toledo, Toledo, Ohio, USA

2015 -To Present Associate Professor, University of Cincinnati, Cincinnati, Ohio, USA

Research and Practice Interests

Advanced nanoscale CMOS devices, high-k/metal gates, nanoelectronics, neuromorphic computing, spintronics, hardware-security, energy harvesting, flexible-transparent electronics, nano/microfabrication, electrical characterization, device modeling, logic and memory devices, neuroelectronics and neuroengineering platforms.

Research Support

Grant: #CNS-1556301 Investigators:Jha, Rashmi 05-30-2015 -08-31-2017 National Science Foundation SaTC: Collaborative: Exploiting Spintronics for Security, Trust and Authentication Role:PI $196,979.00 Active Level:Federal

Grant: #ECCS-1556294 Investigators:Jha, Rashmi 08-03-2015 -12-31-2017 National Science Foundation CAREER: Novel Nanoelectronic Reconfigurable Synaptic Memory Devices Role:PI $362,231.00 Active Level:Federal

Grant: #RY1-UC-17-4 Investigators:Jha, Rashmi 05-08-2017 -05-07-2018 Ohio Department of Higher Education Cyber Physical System Assessment Tools and Techniques for Trusted Microelectronics Role:PI $52,258.00 Active Level:State of Ohio

Grant: #CCF-1718428 Investigators:Jha, Rashmi 08-01-2017 -07-31-2020 National Science Foundation SHF:Small: Collaborative Research: Exploring 3-Dimensional Integration Strategies of STTRAM Role:PI $224,999.00 Active Level:Federal

Grant: #SETS03-UC-2017 / USAF FA8650-14-D-1724/0003 Investigators:Jha, Rashmi; Vemuri, Ranganadha 02-01-2018 -01-30-2019 Air Force Research Laboratory Secure Engineering of Trusted Systems (SETS), USAF FA8650-14-D-1724/0003 Role:Collaborator $102,500.00 Active Level:Federal

Grant: #1919.03.22.91 / FA8650-13-D-1547/0003 Investigators:Jha, Rashmi; Niu, Nan; Ralescu, Anca 08-01-2017 -07-31-2018 Department of the Air Force Exploring Binary Diversification in Codes for Cyber Defense Role:PI $67,500.00 Active Level:Federal

Grant: #18-RI-EP-08 Investigators:Jha, Rashmi 03-01-2018 -02-28-2023 Air Force Research Laboratory EDUCATION PARTNERSHIP (18-RI-EP-08) Role:PI $.00 Active Level:Federal

Grant: #FA8650-18-C-1911 Investigators:Jha, Rashmi; Ralescu, Anca 04-27-2018 -12-31-2020 Air Force Research Laboratory A Novel, Effective, and Efficient Method for Real-Time Prevention and Detection of, and Intervention in Cyber Attacks for Avionics Systems Role:Collaborator $412,000.00 Awarded Level:Federal

Grant: #RY-12-UC-18-4 sub ODHE Investigators:Jha, Rashmi; Ralescu, Anca 08-27-2018 -08-26-2019 Ohio Department of Higher Education Bio-Inspired Self-Evolving Software Platform for Cyber Security / Student: Jeremiah Greer Role:PI $44,130.00 Awarded Level:State of Ohio

Grant: #1919.05.05.91 / FA8650-13-D-1547, Task Order FA8650-17-F-1043 Investigators:Jha, Rashmi; Ralescu, Anca 06-01-2018 -10-31-2018 Air Force Research Laboratory Dynamic Analysis using Intel Processor Trace for Real-Time Malware Detection Role:PI $36,300.00 Active Level:Federal

Grant: #180889102 via e1350 pre-approval Investigators:Jha, Rashmi 09-01-2018 -12-31-2018 National Institute for Occupational Safety and Health Machine Learning to Predict Lower Back Pain Based on Wearable Sensors Data Role:PI $2,500.00 Active Level:Federal

Grant: #75D30119P05031 Investigators:Jha, Rashmi 09-01-2019 -08-31-2020 Centers for Disease Control and Prevention Development of a Machine Learning Algorithm for Classifying Postural Risks of Manual Lifting Role:PI $35,000.00 Awarded Level:Federal

Grant: #NSF ECCS 1926465 Investigators:Jha, Rashmi 09-15-2019 -08-31-2022 National Science Foundation Gated-Synaptic Memory Devices with Adaptive Short- and Long-term States for Neuromorphic Computing Role:PI $300,000.00 Awarded Level:Federal

Grant: #SETS04-UC-2019 / FA8650-14-D-1724/0004 Investigators:Emmert, John; Jha, Rashmi; Vemuri, Ranganadha 06-01-2019 -04-30-2020 Air Force Research Laboratory Secure Engineering of Trusted Systems (SETS 04) Role:Collaborator $932,517.00 Awarded Level:Federal

Grant: #RX16-UC-19-5-AFRL2 / FA8650-19-2-9300 Mod P00009 - Mayersky Investigators:Jha, Rashmi 08-26-2019 -11-30-2020 Air Force Research Laboratory Oxide ferroelectric materials for memristor and FeFET devices (Student: Joshua Mayersky) Role:PI $52,260.00 Awarded Level:Federal

Grant: #IMPACT02-UC-01-2020 / W9111QY-17-C-0114 Investigators:Emmert, John; Jha, Rashmi 01-02-2020 -08-25-2020 Air Force Research Laboratory PHASE I: Simplified Asynchronous Design Framework for Side Channel Attack (SCA) Obfuscation and Mitigation Role:Collaborator $175,000.00 Awarded Level:Federal

Publications

Peer Reviewed Publications

Jha R.; Kapp D.; Koranek D.; Ralescu A.; Santacroce M. (12-03-2018. )Detecting Malicious Assembly with Deep Learning.Proceedings of the IEEE National Aerospace Electronics Conference, NAECON, ,2018-July ,82-85

Barua A.; Jain V.; Jha R.; Nguyen T.; White R.; Wu Y. (12-03-2018. )Ultrasensitive label-free tobramycin detection with aptamer-functionalized ZnO TFT biosensor.Proceedings of the IEEE National Aerospace Electronics Conference, NAECON, ,2018-July ,331-338

Greer J.; Hirschfeld M.; Jha R.; Kapp D.; Niu N.; Ralescu A.; Toth S. (12-03-2018. )Guiding Software Evolution with Binary Diversity.Proceedings of the IEEE National Aerospace Electronics Conference, NAECON, ,2018-July ,92-98

Bailey T.; Barua A.; Jha R.; Kosel P.; Leedy K.; Nguyen T.; Rush A. (11-05-2018. )Reflection coefficient of HfO 2 -based RRAM in different resistance states.Applied Physics Letters, ,113 (19 ),

Ghosh S.; Jha R.; Jones A.; Khan M. (08-10-2018. )Sensing of phase-change memory.Sensing of Non-Volatile Memory Demystified, ,81-102

Bailey T.; Jha R. (08-01-2018. )Understanding Synaptic Mechanisms in SrTiO3 RRAM Devices.IEEE Transactions on Electron Devices, ,65 (8 ),3514-3520

Ghosh S.; Govindaraj R.; Iyengar A.; Jha R. (06-01-2018. )Design Space Exploration for Selector Diode-STTRAM Crossbar Arrays.IEEE Transactions on Magnetics, ,54 (6 ),

Herrmann E.; Jha R. (05-30-2018. )Gate-Controlled memristors and their applications in neuromorphic architectures.Proceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI, ,385-390

Bailey T.; Herrmann E.; Jha R.; Rush A. (04-01-2018. )Gate Controlled Three-Terminal Metal Oxide Memristor.IEEE Electron Device Letters, ,39 (4 ),500-503

Jha R.; Schultz T. (01-24-2018. )Understanding vulnerabilities in ReRAM devices for trust in semiconductor designs.Proceedings of the IEEE National Aerospace Electronics Conference, NAECON, ,2017-June ,338-342

Jha R.; Kumar M.; Sarim M. (01-24-2018. )Neuromorphic device specifications for unsupervised learning in robots.Proceedings of the IEEE National Aerospace Electronics Conference, NAECON, ,2017-June ,44-51

Jha R.; Mayersky J. (01-01-2018. )Development and Characterization of Tungsten Disulfide Ink for Ink-jet Printing.MRS Advances, ,3 (49 ),2953-2958

Jha R.; Kumar M.; Minai A.; Sarim M. (11-08-2017. )Memristive device based learning for navigation in robots.Bioinspiration and Biomimetics, ,12 (6 ),

Bailey T.; Jha R.; Rush A.; Wenke S. (09-27-2017. )Novel spiking neural network utilizing short-term and long-term dynamics of 3-terminal resistive cro.Midwest Symposium on Circuits and Systems, ,2017-August ,432-435

Bailey T.; Jha R. (08-01-2017. )Characterization of transient redox dynamics in SrTiO3 synaptic devices.Device Research Conference - Conference Digest, DRC, ,

Jha R.; Rush A. (08-01-2017. )NbOx synaptic devices for spike frequency dependent plasticity learning.Device Research Conference - Conference Digest, DRC, ,

Bailey T.; Jha R.; Schultz T. (02-14-2017. )Understanding variability in MgO-based ReRAM devices for trust in semiconductor designs.Proceedings of the IEEE National Aerospace Electronics Conference, NAECON, ,372-375

Jha R.; Kumar M.; Sarim M.; Schultz T. (02-14-2017. )Ultra-low energy neuromorphic device based navigation approach for biomimetic robots.Proceedings of the IEEE National Aerospace Electronics Conference, NAECON, ,241-247

Chen W.; Jha R.; Li Y.; Lu W. (06-01-2016. )Self Current Limiting MgO ReRAM Devices for Low-Power Non-Volatile Memory Applications.IEEE Journal on Emerging and Selected Topics in Circuits and Systems, ,6 (2 ),163-170

Chen W.; Jha R.; Lu W. (01-01-2016. )Role of interfaces in achieving self-compliance controlled resistive random access memory devices fo.ECS Transactions, ,72 (4 ),165-169

Jha R.; Kumar M.; Sarim M.; Schultz T. (01-01-2016. )An artificial brain mechanism to develop a learning paradigm for robot navigation.ASME 2016 Dynamic Systems and Control Conference, DSCC 2016, ,1 ,

Chen W.; Jha R.; Lu W.; O'Dell R.; Thapaliya P. (09-28-2015. )Switching characteristics of MgO based self-compliant ReRAM devices.Midwest Symposium on Circuits and Systems, ,2015-September ,

Bersuker G.; Bhunia S.; Chen W.; Gilmer D.; Jha R.; Li Y.; Long B.; Lu W. (07-01-2015. )Switching characteristics of W/Zr/HfO2/TiN ReRAM devices for multi-level cell.Semiconductor Science and Technology, ,30 (7 ),

Chen W.; Jha R.; Li Y.; Lu W. (05-01-2015. )Read Challenges in Crossbar Memories with Nanoscale Bidirectional Diodes and ReRAM Devices.IEEE Transactions on Nanotechnology, ,14 (3 ),444-451

Jha R.; Thapaliya P. (01-01-2015. )Understanding the effect of MgO interfacial layer on ZnO/High-K/FTO transparent thin film transistor.ECS Transactions, ,66 (41 ),15-22

Alexander K.; El-Amin A.; Jha R.; Mandal S.; Rajendran B. (06-18-2014. )Novel synaptic memory device for neuromorphic computing.Scientific Reports, ,4 ,

Jha R.; Mandal S. (01-01-2014. )Nanoelectronic synaptic devices and materials for brain-inspired computational architectures.Proceedings of SPIE - The International Society for Optical Engineering, ,9174 ,

Chen W.; Jha R.; Li Y.; Lu W. (01-01-2014. )Impact of coupling capacitance on read operation of RRAM devices in 1D1R crossbar architectures.Midwest Symposium on Circuits and Systems, ,989-992

Chen W.; Jha R.; Kaake A.; Li Y.; Lu W. (01-01-2014. )A hardware-based approach for implementing biological visual cortex-inspired image learning and reco.Midwest Symposium on Circuits and Systems, ,1001-1004

Alexander K.; Chen W.; Jha R.; Li Y.; Lu W. (01-01-2014. )An integrated active-pixel-sensor and memristive platform for neural-inspired image learning and rec.Midwest Symposium on Circuits and Systems, ,741-744

Chen W.; Jha R.; Li Y.; Lu W.; Thapaliya P. (01-01-2014. )ReRAM device performance study with Transition Metal Disulfide interfacial layer.Device Research Conference - Conference Digest, DRC, ,151-152

Jha R.; Long B.; Mandal S. (12-01-2013. )Study of synaptic behavior in doped transition metal oxide-based reconfigurable devices.IEEE Transactions on Electron Devices, ,60 (12 ),4219-4225

Hulbert P.; Jha R.; Long B.; Mandal S.; Pronin A. (12-01-2013. )Understanding the impact of slow electro-forming in Resistive Random Access Memories.Midwest Symposium on Circuits and Systems, ,85-88

El-Amin A.; Jha R.; Long B.; Mandal S. (11-06-2013. )Doped HfO2 based nanoelectronic memristive devices for self-learning neural c.Proceedings of the 2013 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2013, ,13-18

Chen W.; Jha R.; Li Y.; Long B.; Mandal S. (11-06-2013. )Understanding the impact of diode parameters on sneak current in 1Diode 1ReRAM crossbar architecture.Proceedings of the 2013 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2013, ,64-69

Bhunia S.; Hajimiri H.; Jha R.; Li Y.; Long B.; Mishra P. (11-06-2013. )Content-aware encoding for improving energy efficiency in multi-level cell resistive random access m.Proceedings of the 2013 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2013, ,76-81

Chen W.; El-Amin A.; Jha R.; Li Y.; Long B.; Mandal S. (10-21-2013. )Understanding the role of dopants in transition metal oxide dielectrics for digital and analog resis.ECS Transactions, ,53 (4 ),115-120

Jha R.; Livecchi J.; Long B.; Mandal S. (10-04-2013. )Effects of Mg-doping on HfO2-based ReRAM device switching characteristics.IEEE Electron Device Letters, ,34 (10 ),1247-1249

Jha R.; Long B. (10-29-2012. )Understanding the switching mechanism in transition metal oxide based ReRAM devices.Proceedings - 2012 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2012, ,73-77

Jha R.; Leedy K.; Li Y.; Long B.; Mandal S. (09-10-2012. )Switching dynamics and charge transport studies of resistive random access memory devices.Applied Physics Letters, ,101 (11 ),

Jha R.; Li Y.; Long B. (05-01-2012. )Switching characteristics of Ru/HfO 2/TiO 2-x/Ru RRAM .IEEE Electron Device Letters, ,33 (5 ),706-708

Chowdhury M.; Devabhaktuni V.; Jha R.; Long B. (02-01-2012. )A fundamental understanding of nickel oxide based resistive random access memory with high percentag.Solid-State Electronics, ,68 ,1-3

Jha R.; Li Y.; Long B. (12-29-2011. )Understanding the role of process parameters on the characteristics of transition metal oxide RRAM/m.Materials Research Society Symposium Proceedings, ,1337 ,67-72

Jha R.; Long B.; Melkonian C.; Ordosgoitti J. (11-01-2011. )Understanding the charge transport mechanism in VRS and BRS states of transition metal oxide nanoele.IEEE Transactions on Electron Devices, ,58 (11 ),3912-3919

Compaan A.; Jha R.; Liu X.; Ordosgoitti J.; Paudel N.; Sun K.; Wieland K. (12-01-2010. )Capacitance-voltage characterization of solar cells with CdS in CdTe matrix .Materials Research Society Symposium Proceedings, ,1260 ,151-156

Chen B.; Chung J.; Jha R.; Misra V.; Nemanich R. (12-01-2006. )A systematic approach of understanding and retaining pmos compatible work function of metal electrod .Materials Research Society Symposium Proceedings, ,917 ,37-42

Chen B.; Jha R.; Lee B.; Lee J.; Misra V. (12-01-2006. )Feasibility of dipole based work function tuning for sub-1nm EOT metal gated high-K stacks.ECS Transactions, ,3 (2 ),275-287

Chen B.; Inoue N.; Jha R.; Jur J.; Kingon A.; Lichtenwalner D.; Misra V. (10-24-2006. )High-temperature stability of lanthanum silicate gate dielectric MIS devices with Ta and TaN electro.Journal of the Electrochemical Society, ,153 (9 ),

Chen B.; Jha R.; Misra V. (09-01-2006. )Work function tuning via interface dipole by ultrathin reaction layers using AlTa and AlTaN alloys.IEEE Electron Device Letters, ,27 (9 ),731-733

Biswas N.; Chen B.; Garfunkel E.; Jha R.; Lazar H.; Lee B.; Lee J.; Misra V.; Wielunski L. (04-01-2006. )Influence of oxygen diffusion through capping layers of low work function metal gate electrodes.IEEE Electron Device Letters, ,27 (4 ),228-230

Bei C.; Jha R.; Misra V. (12-01-2005. )Work function tuning via ultra thin charged reaction layers using AlTa and AlTaN alloys .2005 International Semiconductor Device Research Symposium, ,2005 ,117-118

Chen B.; Jha R.; Lee B.; Majhi P.; Misra V.; Novak S. (12-01-2005. )Dependence of PMOS metal work functions on surface conditions of high-K gate dielectrics .Technical Digest - International Electron Devices Meeting, IEDM, ,2005 ,43-46

Jha R.; Lee J.; Majhi P.; Misra V. (11-30-2005. )Investigation of work function tuning using multiple layer metal gate electrodes stacks for compleme.Applied Physics Letters, ,87 (22 ),1-3

Biswas N.; Brown G.; Chen B.; Gurganus J.; Jha R.; Lazar H.; Lee J.; Majhi P.; Misra V. (12-01-2004. )Evaluation of fermi level pinning in low, midgap and high workfunction metal gate electrodes on ALD .Technical Digest - International Electron Devices Meeting, IEDM, ,295-298

Choi R.; Jha R.; Kim Y.; Lee J.; Misra V. (10-01-2004. )Effects of barrier height (? B) and the nature of Bi-layer structure on the r .Digest of Technical Papers - Symposium on VLSI Technology, ,138-139

Choi R.; Jha R.; Kim Y.; Lee J.; Misra V. (09-01-2004. )Reliability of high-k dielectrics and its dependence on gate electrode and interfacial/high-k bi-lay.Microelectronics Reliability, ,44 (9-11 SPEC. ISS. ),1513-1518

Choi R.; Jha R.; Kim Y.; Lee J.; Misra V. (07-12-2004. )Effects of gate electrodes and barrier heights on the breakdown characteristics and Weibull slopes o .Annual Proceedings - Reliability Physics (Symposium), ,595-596

Choi R.; Gurganos J.; Jha R.; Kim Y.; Lee J.; Misra V. (06-01-2004. )A capacitance-based methodology for work function extraction of metals on high-?.IEEE Electron Device Letters, ,25 (6 ),420-423

Choi R.; Jha R.; Kim Y.; Lee J.; Misra V. (01-01-2004. )Effects of gate electrodes and barrier heights on the breakdown characteristics and Weibull slopes o.IEEE International Reliability Physics Symposium Proceedings, ,2004-January (January ),595-596

Gurganus J.; Jha R.; Lazar H.; Lee J.; Lin Y.; Misra V.; Suh Y. (12-01-2003. )Compatibility of Dual Metal Gate Electrodes with High-K Dielectrics for CMOS .Technical Digest - International Electron Devices Meeting, ,323-326

Honors and Awards

CAREER Award, National Science Foundation, 2013

Researcher of the Year Award, EECS Dept., University of Toledo, 2013

IBM Faculty Award, IBM Corporation, 2012

IBM Invention Achievement Award, 2007

Graduate Student Award, Materials Research Society, Spring Meeting, 2006

Applied Materials Fellowship Award, 2005

Best student paper nomination, IEEE/IEDM, 2005

2017 Summer Faculty Fellowship Award US Airforce Research Lab

2017 Master Educator Award College of Engineering and Applied Science, University of Cincinnati

2013 Summer Faculty Fellowship Award National Nanotechnology Infrastructure Network

Contact Information

Academic - ERC 385
University of Cincinnati
Cincinnati  Ohio, 45220
Phone: 513-556-1361
jhari@ucmail.uc.edu