Peter Kosel

Peter B Kosel

Professor

Rhodes Hall

837

CEAS - Elec Eng & Computer Science - 0030

Education

Ph.D, University of New South Wales 1976

Research and Practice Interests

Electronic materials, semiconductor devices and integrated circuits, fabrication, optoelectronics.

Research Support

Grant: #OSP 05153 Investigators:Kosel, Peter 09-01-2004 -02-28-2005 KUB Electronics, Inc. Preparation of Chalcopyrite Films Role:PI $15,000.00 Closed Level:Industry

Grant: #OSP03160 Investigators:Kosel, Peter 03-15-2003 -10-15-2003 Department of the Air Force High Energy Density-Dielectrics for Pulsed Power Capacitors Role:PI $21,229.00 Closed Level:Federal

Grant: #FY '99 Investigators:Kosel, Peter 08-02-1994 -07-31-1999 Department of the Air Force Electronic Power System Application of Polycrystalline Diamond Films Role:PI $343,606.00 Closed Level:Federal

Grant: #ECCS-0853789 Investigators:Kosel, Peter; Singh, Raj 08-01-2009 -07-31-2012 National Science Foundation High Temperature Electronic Devices Based on Wide Bandgap Thin Films Role:Collaborator $263,419.00 Closed Level:Federal

Grant: #AA544202-S1 \ ECCS-1237959 Investigators:Kosel, Peter 01-01-2012 -07-31-2013 National Science Foundation High Temperature Electronic Devices Based on Wide Bandgap Thin Films Role:PI $9,618.00 Active Level:Federal

Publications

Peer Reviewed Publications

Bailey T.; Barua A.; Jha R.; Kosel P.; Leedy K.; Nguyen T.; Rush A. (11-05-2018. )Reflection coefficient of HfO 2 -based RRAM in different resistance states.Applied Physics Letters, ,113 (19 ),

Govindaraju N.; Kosel P.; Singh R. (01-01-2012. )Effect of nanocrystalline diamond deposition conditions on Si MOSFET device characteristics .Ceramic Transactions, ,235 ,87-93

Das D.; Govindaraju N.; Kosel P.; Singh R. (01-01-2012. )Comparison of the electrical behavior of AlN-on-diamond and AlN-on-Si MIS rectifying structures .Ceramic Transactions, ,235 ,77-86

Bach G.; Bachmann S.; Franke W.; Kolb D.; Kosel P. (02-01-2011. )Biomass as combustion fuel-experiences and findings .Renewable Resources and Biotechnology for Material Applications, ,21-30

Das D.; Govindaraju N.; Kosel P.; Singh R. (12-01-2010. )High-temperature dielectric behavior of nanocrystalline and macrocrystalline diamond thin films.ECS Transactions, ,33 (13 ),155-168

Das D.; Govindaraju N.; Kosel P.; Singh R. (10-01-2008. )High-temperature electrical behavior of nanocrystalline and microcrystalline diamond films.Journal of Materials Research, ,23 (10 ),2774-2786

Cahay M.; Fairchild S.; Fraser J.; Garre K.; Kosel P.; Lockwood D.; Samiee M. (04-09-2008. )Field emission characteristics of a lanthanum monosulfide cold cathode array fabricated using microe.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, ,26 (2 ),764-769

Cahay M.; Fairchild S.; Fraser J.; Garre K.; Kosel P.; Lockwood D.; Samiee M. (12-01-2007. )A new cold cathode using pulsed laser deposited lanthanum monosulfide thin films.Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07, ,32-33

Bandyopadhyay S.; Binh V.; Cahay M.; Das B.; Fraser J.; Garre K.; Kanchibhotla B.; Kosel P.; Lockwood D.; Semet V. (12-01-2007. )Self-assembled growth on flexible alumina and nanoporous silicon templates.2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings, ,1227-1230

Cahay M.; Fairchild S.; Frazer J.; Garre K.; Kosel P.; Lockwood D.; Samiee M. (12-01-2006. )Fabrication of a new cold cathode based on pulsed laser deposition of lanthanum monosulfide thin fil .2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006, ,2 ,500-503

Kosel P.; Ramamurti R.; Singh R. (03-14-2006. )Electrical properties of microwave plasma chemical vapor deposited diamond thin films .Ceramic Transactions, ,179 ,85-92

Kosel P.; Poperenko L.; Vinnichenko M. (12-23-2005. )Angular and spectroscopic ellipsometry of ion bombarded surface layer.Proceedings of SPIE - The International Society for Optical Engineering, ,5870 ,1-12

Iroh J.; Kosel P.; Levine K. (05-31-2004. )Synthesis and properties of the nanocomposite of zink oxide and poly(amic acid).Applied Surface Science, ,230 (1-4 ),24-33

Flenniken R.; Kosel P.; Roenker K. (09-01-2003. )A fabrication laboratory course based on GaAs MESFETs .Biennial University/Government/Industry Microelectronics Symposium - Proceedings, ,391-397

Hanjani A.; Kosel P. (01-01-2002. )Optic fiber clock distribution in high speed video memory.Proceedings of SPIE - The International Society for Optical Engineering, ,4650 ,11-22

DeJoseph C.; Kosel P.; Lanter W.; Wrbanek J.; Wu R. (12-01-2000. )Processing Effects on Electrical Properties of Diamond-Like Carbon .New Diamond and Frontier Carbon Technology, ,10 (6 ),383-396

DeJoseph C.; Kosel P.; Lanter W.; Wrbranek J.; Wu R. (12-01-2000. )Ion beam processing of carbon nitride thin films .Materials Research Society Symposium - Proceedings, ,585 ,245-250

Fries-Carr S.; Heidger S.; Kosel P.; Krutko O.; Weimer J.; Wu R. (02-14-2000. )P-type polycrystalline diamond layers by rapid thermal diffusion of boron.Applied Physics Letters, ,76 (7 ),849-851

Gubanov I.; Kolcio N.; Kosel P.; Kulish V. (12-01-1999. )Compact high-power electron EH-accelerator for experimental realization .Digest of Technical Papers-IEEE International Pulsed Power Conference, ,2 ,1018-1021

Gubanov I.; Kolcio N.; Kosel P.; Kulish V. (01-01-1999. )Compact electron EH-accelerator for intensive X-ray flash source .Proceedings of SPIE - The International Society for Optical Engineering, ,3771 ,30-43

Kailyuk A.; Kosel P.; Kulish V. (12-01-1998. )New acceleration principle of charged particles for electronic applications. The general hierarchic .International Journal of Infrared and Millimeter Waves, ,19 (1 ),33-86

Gubanov I.; Kailyuk A.; Kosel P.; Kulish V. (12-01-1998. )New acceleration principle of charged particles for electronic applications. Examples .International Journal of Infrared and Millimeter Waves, ,19 (2 ),251-320

Fries-Carr S.; Heidger S.; Kosel P.; Monreal R.; Weimer J.; Wu R. (12-01-1998. )Multilayer capacitors in polycrystalline diamond by rapid thermal annealing .National Aerospace and Electronics Conference, Proceedings of the IEEE, ,255-262

Gubanov I.; Kailyuk A.; Kosel P.; Kulish V. (02-01-1998. )New acceleration principle of charged particles for electronic applications. Examples .International Journal of Infrared and Millimeter Waves, ,19 (2 ),257-328

Kosel P.; Lanter W.; Miyoshi K.; Monreal R.; Wu R. (01-01-1998. )In situ monitoring of the effects of gas mixtures on ion beam depositions of diamond-like carbon fil .Materials Research Society Symposium - Proceedings, ,502 ,263-268

Kosel P.; Kulish V. (12-01-1997. )New principle of acceleration of high power pulses of quasineutral plasmas and charged particles .Digest of Technical Papers-IEEE International Pulsed Power Conference, ,1 ,667-672

Dalton A.; Fries-Carr S.; Kosel P.; Lanter W.; Monreal R.; Weimer J.; Wu R. (01-01-1997. )Diamond-like carbon film properties from optical and electrical measurements .Materials Research Society Symposium - Proceedings, ,446 ,407-412

Carr S.; Dalton A.; Emmert P.; Hanjani A.; Kosel P.; Wu D.; Wu R. (01-01-1996. )UV/VIS photodetectors in wide-bandgap semiconductors: GaAs and polycrystalline diamond .Proceedings of SPIE - The International Society for Optical Engineering, ,2685 ,140-148

Barnes P.; Carr S.; Garscadden A.; Iyer J.; Kosel P.; Wu R. (12-01-1994. )Device-quality polycrystalline diamond by microwave plasma-enhanced CVD .Proceedings of SPIE - The International Society for Optical Engineering, ,2151 ,121-132

Bozorgebrahimi N.; Iyer J.; Kosel P. (12-01-1991. )Characteristics of MSM detectors for meander channel CCD imagers on GaAs .Proceedings of SPIE - The International Society for Optical Engineering, ,1541 ,48-59

Kosel P.; Poore R. (04-01-1991. )GaAs CCD charge transfer simulation.COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, ,10 (4 ),611-620

Bozorgebrahimi N.; Kosel P. (12-01-1990. )New meander channel 2D CCD imager on GaAs .Proceedings of SPIE - The International Society for Optical Engineering, ,1308 ,273-281

Bechtler L.; Bozorgebrahimi N.; Kosel P.; Poore R. (02-09-1989. )Photodetectors for high speed image scanners on gaas.Proceedings of SPIE - The International Society for Optical Engineering, ,994 ,108-116

Katzer D.; Kosel P.; Poore R. (12-01-1988. )Overlapping-gate CCD imagers on gallium arsenide .Proceedings of SPIE - The International Society for Optical Engineering, ,836 ,120-127

Katzer D.; Kosel P.; Miller E.; Poore R. (12-01-1987. )OVERLAPPING SCHOTTKY GATE CCDS ON GaAs FORMED BY ANODIC OXIDATION. Technical Digest - International Electron Devices Meeting, ,136-139

Kosel P.; Wilson M. (01-01-1987. )Rapid thermal annealing of implanted layers in silicon nitride encapsulated gallium arsenide.Journal of the Electrochemical Society, ,134 (10 ),2560-2565

Katzer D.; Kosel P.; Roeckner' W. (01-01-1987. )Anodic Growth at Electrode Edges on Doped GaAs Channels.Journal of the Electrochemical Society, ,134 (5 ),1205-1211

Kosel P.; Lhymn C.; Vaughan R. (12-01-1986. )Thickness dependence of dielectric breakdown voltage.Thin Solid Films, ,145 (1 ),69-74

Kosel P. (04-15-1986. )Focus tracking system for direct projection cameras.Applied Optics, ,25 (8 ),1274-1283

Geesner C.; Kosel P.; Wilson M. (01-01-1986. )RAPID THERMAL ANNEALING OF IMPLANTED LAYERS FOR GaAs MESFET's AND CCD's. Proceedings - The Electrochemical Society, ,86-3 ,259-273

Katzer D.; Kosel P.; Roeckner W. (01-01-1986. )ANODIC GROWTH AT ELECTRODE EDGES ON DOPED GaAs. Proceedings - The Electrochemical Society, ,86-3 ,140-153

Geesner C.; Kosel P.; Wilson M. (12-01-1985. )RAPID THERMAL ANNEALING OF IMPLANTED LAYERS FOR GaAs MESFETs AND CCDs. Electrochemical Society Extended Abstracts, ,85-2 ,289-290

Katzer D.; Kosel P.; Roeckner W. (12-01-1985. )ANODIC GROWTH AT ELECTRODE EDGES ON DOPED GaAs. Electrochemical Society Extended Abstracts, ,85-2 ,274-275

Boyd J.; King L.; Kosel P.; Wilson M. (01-01-1985. )CONFIGURATIONS FOR HIGH SPEED GALLIUM ARSENIDE CHARGE-COUPLED DEVICE IMAGERS.Optical Engineering, ,24 (1 ),176-182

Kosel P.; Wilson M. (12-01-1984. )ANODIC ISOLATION FOR OVERLAPPING TRANSFER ELECTRODES IN GaAs CCDs. Proceedings - The Electrochemical Society, ,84-7 ,420-428

Kosel P.; Wilson M. (12-01-1984. )ANODIC ISOLATION FOR OVERLAPPING TRANSFER ELECTRODES IN GaAs CCDs. Electrochemical Society Extended Abstracts, ,84-1 ,101-102

Boyd J.; King L.; Kosel P.; Wilson M. (09-26-1984. )Configurations for high speed GaAS CCD imagers.Proceedings of SPIE - The International Society for Optical Engineering, ,460 ,71-78

Boyd J.; Jackson H.; Kosel P.; Zelmon D. (11-30-1983. )Fabrication of graded index sio2 planar optical waveguides on silicon exhibit.Proceedings of SPIE - The International Society for Optical Engineering, ,408 ,34-37

Blakers A.; Green M.; Kosel P.; Willison M. (01-01-1982. )FABRICATION OF THICK NARROW ELECTRODES ON CONCENTRATOR SOLAR CELLS.Journal of vacuum science & technology, ,20 (1 ),13-15

Kosel P.; Munro G.; Vaughan R. (01-01-1981. )Capacitive Transducer for Accurate Displacement Control.IEEE Transactions on Instrumentation and Measurement, ,IM-30 (2 ),114-123

Kosel P. (01-01-1977. )A matrix treatment of primary aberrations.Optica Acta, ,24 (7 ),757-772