Peter Kosel

Peter B Kosel

Professor

Rhodes Hall

837

CEAS - Elec Eng & Computer Science - 0030

Education

Ph.D: University of New South Wales 1976

Research and Practice Interests

Electronic materials, semiconductor devices and integrated circuits, fabrication, optoelectronics.

Research Support

Grant: #OSP 05153 Investigators:Kosel, Peter 09-01-2004 -02-28-2005 KUB Electronics, Inc. Preparation of Chalcopyrite Films Role:PI $15,000.00 Closed Level:Industry

Grant: #OSP03160 Investigators:Kosel, Peter 03-15-2003 -10-15-2003 Department of the Air Force High Energy Density-Dielectrics for Pulsed Power Capacitors Role:PI $21,229.00 Closed Level:Federal

Grant: #FY '99 Investigators:Kosel, Peter 08-02-1994 -07-31-1999 Department of the Air Force Electronic Power System Application of Polycrystalline Diamond Films Role:PI $343,606.00 Closed Level:Federal

Grant: #ECCS-0853789 Investigators:Kosel, Peter; Singh, Raj 08-01-2009 -07-31-2012 National Science Foundation High Temperature Electronic Devices Based on Wide Bandgap Thin Films Role:Collaborator $263,419.00 Closed Level:Federal

Grant: #AA544202-S1 \ ECCS-1237959 Investigators:Kosel, Peter 01-01-2012 -07-31-2013 National Science Foundation High Temperature Electronic Devices Based on Wide Bandgap Thin Films Role:PI $9,618.00 Active Level:Federal

Publications

Peer Reviewed Publications

Nguyen T.;Barua A.;Bailey T.;Rush A.;Kosel P.;Leedy K.;Jha R. (11-05-2018. ) Reflection coefficient of HfO 2 -based RRAM in different resistance states.Applied Physics Letters, , 113 (19 ) , More Information

Govindaraju N.;Kosel P.B.;Singh R.N. (01-01-2012. ) Effect of nanocrystalline diamond deposition conditions on Si MOSFET device characteristics .Ceramic Transactions, , 235 ,87-93

Govindaraju N.;Das D.;Singh R.;Kosel P. (01-01-2012. ) Comparison of the electrical behavior of AlN-on-diamond and AlN-on-Si MIS rectifying structures .Ceramic Transactions, , 235 ,77-86

Bach G.;Bachmann S.;Kolb D.;Kosel P.;Franke W. (02-01-2011. ) Biomass as combustion fuel-experiences and findings .Renewable Resources and Biotechnology for Material Applications, , 21-30

Govindaraju N.;Das D.;Kosel P.;Singh R. (12-01-2010. ) High-temperature dielectric behavior of nanocrystalline and macrocrystalline diamond thin films.ECS Transactions, , 33 (13 ) ,155-168 More Information

Govindaraju N.;Das D.;Singh R.;Kosel P. (10-01-2008. ) High-temperature electrical behavior of nanocrystalline and microcrystalline diamond films.Journal of Materials Research, , 23 (10 ) ,2774-2786 More Information

Samiee M.;Garre K.;Cahay M.;Kosel P.;Fairchild S.;Fraser J.;Lockwood D. (04-09-2008. ) Field emission characteristics of a lanthanum monosulfide cold cathode array fabricated using microe.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, , 26 (2 ) ,764-769 More Information

Samiee M.;Garre K.;Cahay M.;Kosel P.;Fairchild S.;Fraser J.;Lockwood D. (12-01-2007. ) A new cold cathode using pulsed laser deposited lanthanum monosulfide thin films.Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07, , 32-33 More Information

Garre K.;Cahay M.;Kosel P.;Fraser J.;Lockwood D.;Semet V.;Binh V.;Kanchibhotla B.;Bandyopadhyay S.;Das B. (12-01-2007. ) Self-assembled growth on flexible alumina and nanoporous silicon templates.2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings, , 1227-1230 More Information

Samiee M.;Garre K.;Cahay M.;Kosel P.B.;Fairchild S.;Frazer J.W.;Lockwood D.J. (12-01-2006. ) Fabrication of a new cold cathode based on pulsed laser deposition of lanthanum monosulfide thin fil .2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006, , 2 ,500-503

Ramamurti R.;Singh R.;Kosel P. (03-14-2006. ) Electrical properties of microwave plasma chemical vapor deposited diamond thin films .Ceramic Transactions, , 179 ,85-92

Poperenko L.;Kosel P.;Vinnichenko M. (12-23-2005. ) Angular and spectroscopic ellipsometry of ion bombarded surface layer.Proceedings of SPIE - The International Society for Optical Engineering, , 5870 ,1-12 More Information

Levine K.;Iroh J.;Kosel P. (05-31-2004. ) Synthesis and properties of the nanocomposite of zink oxide and poly(amic acid).Applied Surface Science, , 230 (1-4 ) ,24-33 More Information

Roenker K.;Flenniken R.;Kosel P. (09-01-2003. ) A fabrication laboratory course based on GaAs MESFETs .Biennial University/Government/Industry Microelectronics Symposium - Proceedings, , 391-397

Kosel P.;Hanjani A. (01-01-2002. ) Optic fiber clock distribution in high speed video memory.Proceedings of SPIE - The International Society for Optical Engineering, , 4650 ,11-22 More Information

Wu R.;Lanter W.;Wrbanek J.;Kosel P.;DeJoseph C. (12-01-2000. ) Processing Effects on Electrical Properties of Diamond-Like Carbon .New Diamond and Frontier Carbon Technology, , 10 (6 ) ,383-396

Wu R.;Lanter W.;Wrbranek J.;Kosel P.;DeJoseph C. (12-01-2000. ) Ion beam processing of carbon nitride thin films .Materials Research Society Symposium - Proceedings, , 585 ,245-250

Krutko O.;Kosel P.;Wu R.;Fries-Carr S.;Heidger S.;Weimer J. (02-14-2000. ) P-type polycrystalline diamond layers by rapid thermal diffusion of boron.Applied Physics Letters, , 76 (7 ) ,849-851 More Information

Kulish V.;Kosel P.;Kolcio N.;Gubanov I. (12-01-1999. ) Compact high-power electron EH-accelerator for experimental realization .Digest of Technical Papers-IEEE International Pulsed Power Conference, , 2 ,1018-1021

Kulish V.;Kosel P.;Kolcio N.;Gubanov I. (01-01-1999. ) Compact electron EH-accelerator for intensive X-ray flash source .Proceedings of SPIE - The International Society for Optical Engineering, , 3771 ,30-43

Kulish V.;Kosel P.B.;Kailyuk A.G. (12-01-1998. ) New acceleration principle of charged particles for electronic applications. The general hierarchic .International Journal of Infrared and Millimeter Waves, , 19 (1 ) ,33-86

Gubanov I.; Kailyuk A.; Kosel P.; Kulish V. (12-01-1998. ) New acceleration principle of charged particles for electronic applications. Examples .International Journal of Infrared and Millimeter Waves, , 19 (2 ) ,251-320

Kosel P.;Monreal R.;Fries-Carr S.;Weimer J.;Heidger S.;Wu R. (12-01-1998. ) Multilayer capacitors in polycrystalline diamond by rapid thermal annealing .National Aerospace and Electronics Conference, Proceedings of the IEEE, , 255-262

Kulish V.V.;Kosel P.B.;Kailyuk A.G.;Gubanov I.V. (02-01-1998. ) New acceleration principle of charged particles for electronic applications. Examples .International Journal of Infrared and Millimeter Waves, , 19 (2 ) ,257-328

Wu R.;Lanter W.;Monreal R.;Kosel P.;Miyoshi K. (01-01-1998. ) In situ monitoring of the effects of gas mixtures on ion beam depositions of diamond-like carbon fil .Materials Research Society Symposium - Proceedings, , 502 ,263-268

Kulish V.;Kosel P. (12-01-1997. ) New principle of acceleration of high power pulses of quasineutral plasmas and charged particles .Digest of Technical Papers-IEEE International Pulsed Power Conference, , 1 ,667-672

Dalton A.;Kosel P.;Monreal R.;Fries-Carr S.;Weimer J.;Wu R.;Lanter W. (01-01-1997. ) Diamond-like carbon film properties from optical and electrical measurements .Materials Research Society Symposium - Proceedings, , 446 ,407-412

Kosel P.B.;Wu D.;Dalton A.M.;Hanjani A.;Carr S.F.;Emmert P.R.;Wu R.L. (01-01-1996. ) UV/VIS photodetectors in wide-bandgap semiconductors: GaAs and polycrystalline diamond .Proceedings of SPIE - The International Society for Optical Engineering, , 2685 ,140-148

Kosel P.;Iyer J.;Carr S.;Garscadden A.;Barnes P.;Wu R. (12-01-1994. ) Device-quality polycrystalline diamond by microwave plasma-enhanced CVD .Proceedings of SPIE - The International Society for Optical Engineering, , 2151 ,121-132

Kosel P.;Bozorgebrahimi N.;Iyer J. (12-01-1991. ) Characteristics of MSM detectors for meander channel CCD imagers on GaAs .Proceedings of SPIE - The International Society for Optical Engineering, , 1541 ,48-59

Poore R.;Kosel P. (04-01-1991. ) GaAs CCD charge transfer simulation.COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, , 10 (4 ) ,611-620 More Information

Kosel P.;Bozorgebrahimi N. (12-01-1990. ) New meander channel 2D CCD imager on GaAs .Proceedings of SPIE - The International Society for Optical Engineering, , 1308 ,273-281

Kosel P.;Bozorgebrahimi N.;Bechtler L.;Poore R. (02-09-1989. ) Photodetectors for high speed image scanners on gaas.Proceedings of SPIE - The International Society for Optical Engineering, , 994 ,108-116 More Information

Kosel P.;Katzer D.;Poore R. (12-01-1988. ) Overlapping-gate CCD imagers on gallium arsenide .Proceedings of SPIE - The International Society for Optical Engineering, , 836 ,120-127

Kosel P.B.;Katzer D.S.;Poore R.E.;Miller E.M. (12-01-1987. ) OVERLAPPING SCHOTTKY GATE CCDS ON GaAs FORMED BY ANODIC OXIDATION. Technical Digest - International Electron Devices Meeting, , 136-139

Wilson M.;Kosel P. (01-01-1987. ) Rapid thermal annealing of implanted layers in silicon nitride encapsulated gallium arsenide.Journal of the Electrochemical Society, , 134 (10 ) ,2560-2565 More Information

Kosel P.;Katzer D.;Roeckner' W. (01-01-1987. ) Anodic Growth at Electrode Edges on Doped GaAs Channels.Journal of the Electrochemical Society, , 134 (5 ) ,1205-1211 More Information

Lhymn C.;Kosel P.;Vaughan R. (12-01-1986. ) Thickness dependence of dielectric breakdown voltage.Thin Solid Films, , 145 (1 ) ,69-74 More Information

Kosel P. (04-15-1986. ) Focus tracking system for direct projection cameras.Applied Optics, , 25 (8 ) ,1274-1283 More Information

Wilson M.;Kosel P.;Geesner C. (01-01-1986. ) RAPID THERMAL ANNEALING OF IMPLANTED LAYERS FOR GaAs MESFET's AND CCD's. Proceedings - The Electrochemical Society, , 86-3 ,259-273

Kosel P.;Katzer D.;Roeckner W. (01-01-1986. ) ANODIC GROWTH AT ELECTRODE EDGES ON DOPED GaAs. Proceedings - The Electrochemical Society, , 86-3 ,140-153

Wilson M.;Kosel P.;Geesner C. (12-01-1985. ) RAPID THERMAL ANNEALING OF IMPLANTED LAYERS FOR GaAs MESFETs AND CCDs. Electrochemical Society Extended Abstracts, , 85-2 ,289-290

Kosel P.;Roeckner W.;Katzer D. (12-01-1985. ) ANODIC GROWTH AT ELECTRODE EDGES ON DOPED GaAs. Electrochemical Society Extended Abstracts, , 85-2 ,274-275

Kosel P.B.;Wilson M.R.;Boyd J.T.;King L.A. (01-01-1985. ) CONFIGURATIONS FOR HIGH SPEED GALLIUM ARSENIDE CHARGE-COUPLED DEVICE IMAGERS.Optical Engineering, , 24 (1 ) ,176-182 More Information

Kosel P.;Wilson M. (12-01-1984. ) ANODIC ISOLATION FOR OVERLAPPING TRANSFER ELECTRODES IN GaAs CCDs. Proceedings - The Electrochemical Society, , 84-7 ,420-428

Kosel P.;Wilson M. (12-01-1984. ) ANODIC ISOLATION FOR OVERLAPPING TRANSFER ELECTRODES IN GaAs CCDs. Electrochemical Society Extended Abstracts, , 84-1 ,101-102

Kosel P.B.;Wilson M.R.;Boyd J.T.;King L.A. (09-26-1984. ) Configurations for high speed GaAS CCD imagers.Proceedings of SPIE - The International Society for Optical Engineering, , 460 ,71-78 More Information

Jackson H.;Zelmon D.;Boyd J.;Kosel P. (11-30-1983. ) Fabrication of graded index sio2 planar optical waveguides on silicon exhibit.Proceedings of SPIE - The International Society for Optical Engineering, , 408 ,34-37 More Information

Blakers A.;Kosel P.;Willison M.;Green M. (01-01-1982. ) FABRICATION OF THICK NARROW ELECTRODES ON CONCENTRATOR SOLAR CELLS.Journal of vacuum science & technology, , 20 (1 ) ,13-15 More Information

Kosel P.;Munro G.;Vaughan R. (01-01-1981. ) Capacitive Transducer for Accurate Displacement Control.IEEE Transactions on Instrumentation and Measurement, , IM-30 (2 ) ,114-123 More Information

Kosel P. (01-01-1977. ) A matrix treatment of primary aberrations.Optica Acta, , 24 (7 ) ,757-772 More Information