Peter B Kosel

Ph.D: University of New South Wales 1976

Electronic materials, semiconductor devices and integrated circuits, fabrication, optoelectronics.

Grant: #OSP 05153 Investigators:Kosel, Peter 09-01-2004 -02-28-2005 KUB Electronics, Inc. Preparation of Chalcopyrite Films Role:PI $15,000.00 Closed Level:Industry

Grant: #OSP03160 Investigators:Kosel, Peter 03-15-2003 -10-15-2003 Department of the Air Force High Energy Density-Dielectrics for Pulsed Power Capacitors Role:PI $21,229.00 Closed Level:Federal

Grant: #FY '99 Investigators:Kosel, Peter 08-02-1994 -07-31-1999 Department of the Air Force Electronic Power System Application of Polycrystalline Diamond Films Role:PI $343,606.00 Closed Level:Federal

Grant: #ECCS-0853789 Investigators:Kosel, Peter; Singh, Raj 08-01-2009 -07-31-2012 National Science Foundation High Temperature Electronic Devices Based on Wide Bandgap Thin Films Role:Collaborator $263,419.00 Closed Level:Federal

Grant: #AA544202-S1 \ ECCS-1237959 Investigators:Kosel, Peter 01-01-2012 -07-31-2013 National Science Foundation High Temperature Electronic Devices Based on Wide Bandgap Thin Films Role:PI $9,618.00 Active Level:Federal

Peer Reviewed Publications

Nguyen T.;Barua A.;Bailey T.;Rush A.;Kosel P.;Leedy K.;Jha R.  (11-05-2018). Reflection coefficient of HfO 2 -based RRAM in different resistance states. Applied Physics Letters, 113 (19) More Information

Govindaraju N.;Kosel P.B.;Singh R.N.  (01-01-2012). Effect of nanocrystalline diamond deposition conditions on Si MOSFET device characteristics. Ceramic Transactions, 235, 87-93

Govindaraju N.;Das D.;Singh R.;Kosel P.  (01-01-2012). Comparison of the electrical behavior of AlN-on-diamond and AlN-on-Si MIS rectifying structures. Ceramic Transactions, 235, 77-86

Bach G.;Bachmann S.;Kolb D.;Kosel P.;Franke W.  (02-01-2011). Biomass as combustion fuel-experiences and findings. Renewable Resources and Biotechnology for Material Applications, 21-30

Govindaraju N.;Das D.;Kosel P.;Singh R.  (12-01-2010). High-temperature dielectric behavior of nanocrystalline and macrocrystalline diamond thin films. ECS Transactions, 33 (13) , 155-168More Information

Govindaraju N.;Das D.;Singh R.;Kosel P.  (10-01-2008). High-temperature electrical behavior of nanocrystalline and microcrystalline diamond films. Journal of Materials Research, 23 (10) , 2774-2786More Information

Samiee M.;Garre K.;Cahay M.;Kosel P.;Fairchild S.;Fraser J.;Lockwood D.  (04-09-2008). Field emission characteristics of a lanthanum monosulfide cold cathode array fabricated using microe. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26 (2) , 764-769More Information

Samiee M.;Garre K.;Cahay M.;Kosel P.;Fairchild S.;Fraser J.;Lockwood D.  (12-01-2007). A new cold cathode using pulsed laser deposited lanthanum monosulfide thin films. Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07, 32-33More Information

Garre K.;Cahay M.;Kosel P.;Fraser J.;Lockwood D.;Semet V.;Binh V.;Kanchibhotla B.;Bandyopadhyay S.;Das B.  (12-01-2007). Self-assembled growth on flexible alumina and nanoporous silicon templates. 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings, 1227-1230More Information

Samiee M.;Garre K.;Cahay M.;Kosel P.B.;Fairchild S.;Frazer J.W.;Lockwood D.J.  (12-01-2006). Fabrication of a new cold cathode based on pulsed laser deposition of lanthanum monosulfide thin fil. 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006, 2, 500-503

Ramamurti R.;Singh R.;Kosel P.  (03-14-2006). Electrical properties of microwave plasma chemical vapor deposited diamond thin films. Ceramic Transactions, 179, 85-92

Poperenko L.;Kosel P.;Vinnichenko M.  (12-23-2005). Angular and spectroscopic ellipsometry of ion bombarded surface layer. Proceedings of SPIE - The International Society for Optical Engineering, 5870, 1-12More Information

Levine K.;Iroh J.;Kosel P.  (05-31-2004). Synthesis and properties of the nanocomposite of zink oxide and poly(amic acid). Applied Surface Science, 230 (1-4) , 24-33More Information

Roenker K.;Flenniken R.;Kosel P.  (09-01-2003). A fabrication laboratory course based on GaAs MESFETs. Biennial University/Government/Industry Microelectronics Symposium - Proceedings, 391-397

Kosel P.;Hanjani A.  (01-01-2002). Optic fiber clock distribution in high speed video memory. Proceedings of SPIE - The International Society for Optical Engineering, 4650, 11-22More Information

Wu R.;Lanter W.;Wrbanek J.;Kosel P.;DeJoseph C.  (12-01-2000). Processing Effects on Electrical Properties of Diamond-Like Carbon. New Diamond and Frontier Carbon Technology, 10 (6) , 383-396

Wu R.;Lanter W.;Wrbranek J.;Kosel P.;DeJoseph C.  (12-01-2000). Ion beam processing of carbon nitride thin films. Materials Research Society Symposium - Proceedings, 585, 245-250

Krutko O.;Kosel P.;Wu R.;Fries-Carr S.;Heidger S.;Weimer J.  (02-14-2000). P-type polycrystalline diamond layers by rapid thermal diffusion of boron. Applied Physics Letters, 76 (7) , 849-851More Information

Kulish V.;Kosel P.;Kolcio N.;Gubanov I.  (12-01-1999). Compact high-power electron EH-accelerator for experimental realization. Digest of Technical Papers-IEEE International Pulsed Power Conference, 2, 1018-1021

Kulish V.;Kosel P.;Kolcio N.;Gubanov I.  (01-01-1999). Compact electron EH-accelerator for intensive X-ray flash source. Proceedings of SPIE - The International Society for Optical Engineering, 3771, 30-43

Kulish V.;Kosel P.B.;Kailyuk A.G.  (12-01-1998). New acceleration principle of charged particles for electronic applications. The general hierarchic . International Journal of Infrared and Millimeter Waves, 19 (1) , 33-86

Gubanov I.; Kailyuk A.; Kosel P.; Kulish V.  (12-01-1998). New acceleration principle of charged particles for electronic applications. Examples. International Journal of Infrared and Millimeter Waves, 19 (2) , 251-320

Kosel P.;Monreal R.;Fries-Carr S.;Weimer J.;Heidger S.;Wu R.  (12-01-1998). Multilayer capacitors in polycrystalline diamond by rapid thermal annealing. National Aerospace and Electronics Conference, Proceedings of the IEEE, 255-262

Kulish V.V.;Kosel P.B.;Kailyuk A.G.;Gubanov I.V.  (02-01-1998). New acceleration principle of charged particles for electronic applications. Examples. International Journal of Infrared and Millimeter Waves, 19 (2) , 257-328

Wu R.;Lanter W.;Monreal R.;Kosel P.;Miyoshi K.  (01-01-1998). In situ monitoring of the effects of gas mixtures on ion beam depositions of diamond-like carbon fil. Materials Research Society Symposium - Proceedings, 502, 263-268

Kulish V.;Kosel P.  (12-01-1997). New principle of acceleration of high power pulses of quasineutral plasmas and charged particles. Digest of Technical Papers-IEEE International Pulsed Power Conference, 1, 667-672

Dalton A.;Kosel P.;Monreal R.;Fries-Carr S.;Weimer J.;Wu R.;Lanter W.  (01-01-1997). Diamond-like carbon film properties from optical and electrical measurements. Materials Research Society Symposium - Proceedings, 446, 407-412

Kosel P.B.;Wu D.;Dalton A.M.;Hanjani A.;Carr S.F.;Emmert P.R.;Wu R.L.  (01-01-1996). UV/VIS photodetectors in wide-bandgap semiconductors: GaAs and polycrystalline diamond. Proceedings of SPIE - The International Society for Optical Engineering, 2685, 140-148

Kosel P.;Iyer J.;Carr S.;Garscadden A.;Barnes P.;Wu R.  (12-01-1994). Device-quality polycrystalline diamond by microwave plasma-enhanced CVD. Proceedings of SPIE - The International Society for Optical Engineering, 2151, 121-132

Kosel P.;Bozorgebrahimi N.;Iyer J.  (12-01-1991). Characteristics of MSM detectors for meander channel CCD imagers on GaAs. Proceedings of SPIE - The International Society for Optical Engineering, 1541, 48-59

Poore R.;Kosel P.  (04-01-1991). GaAs CCD charge transfer simulation. COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, 10 (4) , 611-620More Information

Kosel P.;Bozorgebrahimi N.  (12-01-1990). New meander channel 2D CCD imager on GaAs. Proceedings of SPIE - The International Society for Optical Engineering, 1308, 273-281

Kosel P.;Bozorgebrahimi N.;Bechtler L.;Poore R.  (02-09-1989). Photodetectors for high speed image scanners on gaas. Proceedings of SPIE - The International Society for Optical Engineering, 994, 108-116More Information

Kosel P.;Katzer D.;Poore R.  (12-01-1988). Overlapping-gate CCD imagers on gallium arsenide. Proceedings of SPIE - The International Society for Optical Engineering, 836, 120-127

Kosel P.B.;Katzer D.S.;Poore R.E.;Miller E.M.  (12-01-1987). OVERLAPPING SCHOTTKY GATE CCDS ON GaAs FORMED BY ANODIC OXIDATION. Technical Digest - International Electron Devices Meeting, 136-139

Wilson M.;Kosel P.  (01-01-1987). Rapid thermal annealing of implanted layers in silicon nitride encapsulated gallium arsenide. Journal of the Electrochemical Society, 134 (10) , 2560-2565More Information

Kosel P.;Katzer D.;Roeckner' W.  (01-01-1987). Anodic Growth at Electrode Edges on Doped GaAs Channels. Journal of the Electrochemical Society, 134 (5) , 1205-1211More Information

Lhymn C.;Kosel P.;Vaughan R.  (12-01-1986). Thickness dependence of dielectric breakdown voltage. Thin Solid Films, 145 (1) , 69-74More Information

Kosel P.  (04-15-1986). Focus tracking system for direct projection cameras. Applied Optics, 25 (8) , 1274-1283More Information

Wilson M.;Kosel P.;Geesner C.  (01-01-1986). RAPID THERMAL ANNEALING OF IMPLANTED LAYERS FOR GaAs MESFET's AND CCD's. Proceedings - The Electrochemical Society, 86-3, 259-273

Kosel P.;Katzer D.;Roeckner W.  (01-01-1986). ANODIC GROWTH AT ELECTRODE EDGES ON DOPED GaAs. Proceedings - The Electrochemical Society, 86-3, 140-153

Wilson M.;Kosel P.;Geesner C.  (12-01-1985). RAPID THERMAL ANNEALING OF IMPLANTED LAYERS FOR GaAs MESFETs AND CCDs. Electrochemical Society Extended Abstracts, 85-2, 289-290

Kosel P.;Roeckner W.;Katzer D.  (12-01-1985). ANODIC GROWTH AT ELECTRODE EDGES ON DOPED GaAs. Electrochemical Society Extended Abstracts, 85-2, 274-275

Kosel P.B.;Wilson M.R.;Boyd J.T.;King L.A.  (01-01-1985). CONFIGURATIONS FOR HIGH SPEED GALLIUM ARSENIDE CHARGE-COUPLED DEVICE IMAGERS. Optical Engineering, 24 (1) , 176-182More Information

Kosel P.;Wilson M.  (12-01-1984). ANODIC ISOLATION FOR OVERLAPPING TRANSFER ELECTRODES IN GaAs CCDs. Proceedings - The Electrochemical Society, 84-7, 420-428

Kosel P.;Wilson M.  (12-01-1984). ANODIC ISOLATION FOR OVERLAPPING TRANSFER ELECTRODES IN GaAs CCDs. Electrochemical Society Extended Abstracts, 84-1, 101-102

Kosel P.B.;Wilson M.R.;Boyd J.T.;King L.A.  (09-26-1984). Configurations for high speed GaAS CCD imagers. Proceedings of SPIE - The International Society for Optical Engineering, 460, 71-78More Information

Jackson H.;Zelmon D.;Boyd J.;Kosel P.  (11-30-1983). Fabrication of graded index sio2 planar optical waveguides on silicon exhibit. Proceedings of SPIE - The International Society for Optical Engineering, 408, 34-37More Information

Blakers A.;Kosel P.;Willison M.;Green M.  (01-01-1982). FABRICATION OF THICK NARROW ELECTRODES ON CONCENTRATOR SOLAR CELLS. Journal of vacuum science & technology, 20 (1) , 13-15More Information

Kosel P.;Munro G.;Vaughan R.  (01-01-1981). Capacitive Transducer for Accurate Displacement Control. IEEE Transactions on Instrumentation and Measurement, IM-30 (2) , 114-123More Information

Kosel P.  (01-01-1977). A matrix treatment of primary aberrations. Optica Acta, 24 (7) , 757-772More Information