Andrew Steckl
Professor
Distinguished University Research Professor; Gieringer Professor and Ohio Eminent Scholar
Rhodes Hall
839
CEAS - Electrical and Computer Engineeri - 0030
Professional Summary
Current research directions in Dr. Steckl's group include: (1) novel bio/organic materials and sensors; (2) microfluidic devices; (3) electrospinning of novel nanofiber membrane and related bio/medical applications. More information on the activities of the Nanoelectronics Laboratory at the lab website - http://www.nanolab.uc.edu
Professional Recognition
2022 Electronics and Photonics Award of the Electrochemical Society for Outstanding Achievements in Optoelectronic Materials and Devices.
2016 Chair of the Fellows of the Graduate School, University of Cincinnati.
2015 Fellow of the National Academy of Inventors.
2014 William H. Middendorf Research Excellence Award, University of Cincinnati.
2013 Excellence in Engineering Research Award, University of Cincinnati.
2013 Distinguished University Research Professor, University of Cincinnati.
2013 Life Fellow of the Institute of Electrical and Electronic Engineering (IEEE).
2010 Fellow of American Association for the Advancement of Science (AAAS), “For Distinguished Contributions to Optoelectronics”.
2009 University of Cincinnati Graduate Fellow.
2007 Distinguished Engineering Research Award, University of Cincinnati.
2006 Rieveschl Award for Distinguished Scientific Research, University of Cincinnati, “For Pioneering Inventions and Contributions in the Field of Rare-Earth-Doped Electroluminescent Materials and Devices”.
1999 Elected Scientific Member of the Bohmische Physikalische Gesselschaft: “For Original Research Contributions to Focused Ion Beam Interactions in Materials”.
1999 College of Engineering Research Award, University of Cincinnati.
1998 Fellow of the Institute of Electrical and Electronic Engineering (IEEE): “For Contributions to Focused Ion Beam Implantation and Semiconductor Device Fabrication”.
To date, Prof. Steckl has educated 50+ Ph. D. students, multiple M.S. students and has supervised 13 post-doctoral fellows. Together with his students, he has published ~ 460 papers, which have received ~ 17,000 citations to date. This has resulted in a current citation h-index of 72 (including patent citations). Prof. Steckl has also obtained 28 patents on various bio/electronic materials and devices. He has been awarded ~ $20M+ in research funding at UC from a variety of sources, including federal agencies (such as Army Natick Soldier Research Laboratory, Army Research Office, Army Research Laboratory, Air Force Research Laboratory, DARPA, National Security Agency, NASA, NIH, NSF), State of Ohio agencies (Ohio Department of Development, Edison Materials Center, 3rd Frontier) and industry (Motorola, Dow Corning, Lion Apparel, Procter & Gamble, Rockwell, Raytheon, SAPPI, CDT, etc.).
Education
Ph.D.: University of Rochester Rochester, NY, 1973 (Electrical Engineering/Materials Science)
B.S.E.: Princeton University Princeton, NJ, 1968 (Electrical Engineering)
M.S.: University of Rochester Rochester, NY, 1970 (Electrical Engineering)
Research and Practice Interests
Electronic and photonic materials and devices, nano-materials, electrofluidics, biopolymers.
Positions and Work Experience
1972 -1973 Senior Research Engineer, Infrared Detectors, Honeywell Radiation Center, Lexington, MA
1973 -1976 Member of Technical Staff, Charge Coupled Devices for Infrared Sensors, Rockwell Electronics Research Center, Anaheim, CA
1976 -1987 Professor of Electrical Engineering, Semiconductor Devices, Rensselaer Polytechnic Institute, Troy, NY
1981 -1986 Director, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY
1977 -1977 Faculty Fellow, IBM T.J. Watson Research Center, Yorktown Heights, NY
1985 -1985 Visiting Professor, Electrical Engineering, Stanford University, Palo Alto, CA
1988 -To Present Ohio Eminent Scholar and Gieringer Professor, Electrical & Computer Engineering, University of Cincinnati, Cincinnati, OH
2015 -2015 Visiting Professor, Biomedical Enginering, University of California, Irvine, Irvine, CA
2023 -2023 Visiting Professor, Electrical Engineering, Stanford University, Palo Alto, CA
Research Support
Grant: #W911NF-06-1-0296 Investigators:Steckl, Andrew 08-01-2006 -01-31-2010 Department of the Army Injection Laser Using Rare Earth Doped GaN Thin Films for Visible and Infrared Applications Role:PI $424,916.00 Closed Level:Federal
Grant: #S000000941 & Chg.1 Investigators:Steckl, Andrew 08-15-2005 -08-14-2006 Department of the Air Force Fluorescence Studies of Electro-Optic Polymers Role:PI $1,000.00 Closed Level:Federal
Grant: #USAF-5408-04-SC-0007 Investigators:Steckl, Andrew 08-14-2006 -08-31-2009 Department of the Air Force Biopolymers for Organic Light Emitting Diodes Role:PI $119,000.00 Closed Level:Federal
Grant: #ECS-0439074 Investigators:Steckl, Andrew 11-15-2004 -10-31-2006 National Science Foundation Liquid Logic - The Third Wave in Electronics Role:PI $46,976.00 Closed Level:Federal
Grant: #DAAD19-02-2-0014/02 Investigators:Steckl, Andrew 06-30-2002 -06-29-2005 Department of the Army Rare-Earth-Doped GaN Electroluminescent Semiconductor Technology for All Solid-State Displays Operating under Extreme Conditions Role:PI $760,351.00 Closed Level:Federal
Grant: #DAAD19-3-1-0101/P5 Investigators:Steckl, Andrew 06-01-2003 -05-31-2006 Department of the Army Robust Visible and Infrared Light Emitting Devices Using Rare-Earth-Doped GaN Role:PI $360,000.00 Closed Level:Federal
Grant: ##650 Investigators:Steckl, Andrew 06-15-2003 -06-14-2004 Ohio Board of Regents Dopant Compostion Measurement Equipment for Improved Rare-Earth-Doped Electroluminescent Devices Role:PI $100,000.00 Closed Level:State of Ohio
Grant: #DAAD19-03-1-0154 Investigators:Steckl, Andrew 06-15-2003 -06-14-2004 Department of the Army Dopant Composition Measurement Equipment for Improved Rare-Earth-Doped Electroluminescent Devices Role:PI $275,000.00 Closed Level:Federal
Grant: #DAAD19-03-1-0019 Investigators:Steckl, Andrew 03-01-2003 -02-28-2004 Department of the Army Impurity Based Electroluminescence in Wide Bandgap Semiconductors Role:PI $18,000.00 Closed Level:Federal
Grant: #Program Income Investigators:Steckl, Andrew 03-01-2003 -02-28-2004 Program Income Conference Grant Program Income Role:PI $3,990.00 Closed Level:Other
Grant: #2948S1 Investigators:Steckl, Andrew 05-28-1999 -05-27-2000 Department of the Air Force Robust Micro Electro Mechanical Structures of Flow Control and Engine Sensors Role:PI $32,251.00 Closed Level:Federal
Grant: #2013 S1/CN 01 Investigators:Steckl, Andrew 05-01-2000 -09-01-2002 Department of the Air Force Robust Microelectromechanical Systems of Flow Control and Engine Sensors Role:PI $311,550.00 Closed Level:Federal
Grant: #CT580265A4 Investigators:Steckl, Andrew 01-10-2000 -01-09-2001 Edison Materials Technology Center Large Area Low Cost Semiconductors Role:PI $75,000.00 Closed Level:Private Non-Profit
Grant: #TECH 00-082 Investigators:Steckl, Andrew 06-01-2000 -02-28-2003 Ohio Department of Development Technology for Semiconductor Devices Operating under Extreme Conditions Role:PI $595,100.00 Closed Level:State of Ohio
Grant: #MDA904-00-C-2103/01 Investigators:Steckl, Andrew 09-17-2000 -09-17-2003 National Security Agency Unique Applications of Focused Ion Beam Technology: Ion Sources and Optoelectronic Device Fabrication Role:PI $800,716.00 Closed Level:Federal
Grant: #OBR #493/1 Investigators:Steckl, Andrew 09-18-2000 -09-17-2003 Ohio Board of Regents Unique Applications of Focused Ion Beam Technology: Ion Sources and Optoelectronic Device Fabrication Role:PI $90,000.00 Closed Level:State of Ohio
Grant: #DAAH049510347 Investigators:Steckl, Andrew 09-01-1995 -08-31-1999 Department of the Army Porous Si Laser Fabrication by FIB Implantation Role:PI $190,000.00 Closed Level:Federal
Grant: #DAAY049510626/P00004 Investigators:Steckl, Andrew 09-15-1995 -07-14-1999 Department of the Army Novel Luminescent Materials and Processes for Optoelectronic Devices Role:PI $386,000.00 Closed Level:Federal
Grant: #MDA9049710110/P00001 Investigators:Steckl, Andrew 09-05-1997 -03-04-2000 National Security Agency Focused Ion Beam Nano-Fabrication of Semiconductor Devices Role:PI $500,216.00 Closed Level:Federal
Grant: #Amend. 1 Investigators:Steckl, Andrew 09-05-1997 -03-04-2000 Ohio Board of Regents Focused Ion Beam Nano-Fabrication of Semiconductor Devices Role:PI $92,500.00 Closed Level:State of Ohio
Grant: #OSP97164 Investigators:Steckl, Andrew 07-15-1997 -07-14-1999 Rockwell Automation, Inc. Growth of GaN Wafers on SiC SOL Role:PI $25,000.00 Closed Level:Industry
Grant: #F336159812865/P00004 Investigators:Steckl, Andrew 09-24-1998 -12-23-2004 Department of the Air Force GaN Plasma-Based Etching Role:PI $256,350.00 Closed Level:Federal
Grant: #DAAG559810208/P00001 Investigators:Steckl, Andrew 06-01-1998 -05-31-2002 Department of the Army Optical Characterization of Light Emitting Materials Role:PI $186,334.00 Closed Level:Federal
Grant: #ECS-9813588 Investigators:Steckl, Andrew 06-15-1998 -11-30-1999 National Science Foundation Optical Memory Device Using Biphotonic Stimulation in Rare-Earth-Doped Material Role:PI $56,000.00 Closed Level:Federal
Grant: ##403 Investigators:Steckl, Andrew 06-10-1999 -06-09-2002 Ohio Board of Regents Focused Ion Beam Fabrication of Photonic Circuits for High Speed Memory Role:PI $170,000.00 Closed Level:State of Ohio
Grant: #MDA90499C2597/P00001 Investigators:Steckl, Andrew 06-10-1999 -06-09-2002 National Security Agency Focused Ion Beam Fabrication of Photonic Circuits for High Speed Memory Role:PI $1,007,388.00 Closed Level:Federal
Grant: #OSP99151 Investigators:Steckl, Andrew 01-01-1999 -12-31-2000 Dow Corning Corporation SiC and GaN Thin Film Growth Role:PI $322,723.00 Closed Level:Industry
Grant: #DAAD199910348/P00004 Investigators:Steckl, Andrew 10-01-1999 -06-30-2003 Department of the Army Rare Earth Doped GaN Visible and Infrared Light Emitters Role:PI $280,000.00 Closed Level:Federal
Grant: #ECS-9906984-NCE Investigators:Steckl, Andrew 09-15-1999 -02-28-2003 National Science Foundation Focused Ion Beam Fabrication of Optical Storage Structures using Biphotonic Stimulation in Rare Earth Doped Materials Role:PI $180,000.00 Closed Level:Federal
Grant: #W911NF-07-1-0220 Investigators:Steckl, Andrew 06-01-2007 -05-31-2008 Department of the Army Molecular Beam Epitaxy Equipment for Growth of Versatile Visible and Infrared Rare-Earth-Based GaN Lasers Role:PI $200,000.00 Closed Level:Federal
Grant: #FA8650-07-C-7717 Investigators:Steckl, Andrew 06-01-2007 -06-14-2009 Department of the Air Force Liquid Field Effect Transistors for Biocompatible Applications Role:PI $292,000.00 Closed Level:Federal
Grant: #ECCS-0725530 Investigators:Steckl, Andrew 08-01-2007 -07-31-2011 National Science Foundation Liquid Field Effect Transistors Role:PI $200,000.00 Closed Level:Federal
Grant: #RSC06054 / FA8650-04-2-4201 Investigators:Steckl, Andrew 08-15-2006 -06-30-2007 Department of the Air Force Optical Photoluminescence Correlation Role:PI $21,491.00 Closed Level:Federal
Grant: #U54 EB007954 Investigators:Air, Dorothy; Beyette, Fred; Bishop, Paul; Broderick, Joseph; Clark, Joseph; Haridas, Balakrishna; Helmicki, Arthur; Jauch, Edward; Kanter, Daniel; Pancioli, Arthur; Papautsky, Ian; Privitera, Mary Beth; Shutter, Lori; Steckl, Andrew; Todd, Anita; Tomsick, Thomas; Wilsey, Philip 09-30-2007 -06-30-2014 National Institute of Biomedical Imaging and Bioengineering Point of Care-Care Center for Emerging Neurotechnologies Role:Collaborator $9,416,342.00 Active Level:Federal
Grant: #UDRI RSC 07028-ODOD W944SR-06-C-0043 Investigators:Cuppoletti, John; Heikenfeld, Jason; Heineman, William; Steckl, Andrew 02-26-2007 -02-26-2014 Ohio Department of Development Institute for Development Commercialization of Advanced Sensor Role:Collaborator $1,000,000.00 Active Level:State of Ohio
Grant: #FA4869-07-1-4069 Investigators:Steckl, Andrew 06-15-2007 -07-14-2010 Department of the Air Force Electronic, Photonic and Magnetic Properties of Natural and Modified DNA Complexed with Heavy Metal Ions Role:PI $210,151.41 Closed Level:Federal
Grant: #Ipitek / W31P4Q-08-C-0232 Investigators:Steckl, Andrew 03-26-2008 -09-21-2008 Department of the Army Rare Earth Doped Organic Light Emitting Diodes for Infrared to Visible Upconversion Role:PI $29,000.00 Closed Level:Federal
Grant: #TECH-09-022 Investigators:Abdallah, Shaaban; Cohen, Kelly; Hamed, Awatef; Jeng, San-Mou; Jog, Milind; Khosla, Prem; Lee, Jay; Qian, Dong; Schulz, Mark; Shanov, Vesselin; Singh, Raj; Steckl, Andrew; Turner, Mark; Vasudevan, Vijay; Walker, Bruce 08-18-2008 -08-17-2013 Ohio Department of Development Intelligent Propulsion and Power Systems and Their Life Management Role:Collaborator $27,492,308.00 Active Level:State of Ohio
Grant: #SRS 006005 Investigators:Steckl, Andrew 01-01-2009 -12-31-2010 Raytheon Company Research on Materials for Electrowetting (Phase I) Role:PI $198,509.00 Active Level:Industry
Grant: #W911NF-09-1-0201 Investigators:Steckl, Andrew 05-01-2009 -04-30-2010 Air Force Office of Scientific Research Plasma Source for the Growth of Rare-Earth-Based GaN Laser Structures Role:PI $74,504.00 Active Level:Federal
Grant: #RX7-UC-09-3 Investigators:Steckl, Andrew 06-22-2009 -12-31-2011 Ohio Board of Regents Electrospinning of Biological Materials Role:PI $151,030.00 Active Level:State of Ohio
Grant: #FA9550-09-1-0497 Investigators:Steckl, Andrew 07-01-2009 -06-30-2010 Air Force Office of Scientific Research Circular Dichroism Spectrometer System for the Optical Characterization of DNA Thin Films Role:PI $116,000.00 Closed Level:Federal
Grant: #RX7-UC-09-3CG Investigators:Steckl, Andrew 10-01-2009 -03-31-2012 Multiple Sponsors Electrospinning of Fibers for Extreme Conditions Role:PI $80,000.00 Active Level:Other
Grant: #W911NF-10-1-0329 Investigators:Steckl, Andrew 08-09-2010 -12-31-2013 Department of the Army Rare Earth Doped GaN Laser Structures Using Metal Modulated Expitaxy Role:PI $335,505.00 Active Level:Federal
Grant: #W911QY-10-C-0185 Investigators:Steckl, Andrew 09-01-2010 -03-04-2013 Department of the Army Electrospinning of Enzyme Containing Fibers Role:PI $222,691.92 Active Level:Federal
Grant: #TECH 11-016 Investigators:Ahn, Chong; Heikenfeld, Jason; Iyer, Suri; Papautsky, Ian; Son, Sang Young; Steckl, Andrew 07-19-2010 -06-30-2014 Ohio Department of Development The Ohio Center for Microfluidic Innovation Role:Collaborator $2,956,675.00 Active Level:State of Ohio
Grant: #SRS 007441 Investigators:Steckl, Andrew 04-01-2011 -09-30-2011 Sappi Fine Paper North America Smart Packaging on Paper Role:PI $54,000.00 Closed Level:Industry
Grant: #RAI000625-May2011 Investigators:Steckl, Andrew 07-01-2011 -12-31-2013 RJ Reynolds Fluorine-Free Superhydrophobic Surfaces Role:PI $200,562.00 Active Level:Industry
Grant: #Steckl 2012-2013 Investigators:Steckl, Andrew 05-15-2012 -12-31-2013 Sappi Fine Paper North America Packaging on Paper Role:PI $122,236.00 Active Level:Industry
Grant: #ECCS-1236987 Investigators:Steckl, Andrew 07-15-2012 -12-31-2014 National Science Foundation EAGER: Photonics-on-Paper - A New Paradigm in Low Cost Device Role:PI $150,010.00 Active Level:Federal
Grant: #PO 4534712328 Investigators:Steckl, Andrew 03-01-2013 -10-31-2013 R. J. Reynolds Vapor Company PHASE I: Fiber Electrospinning Investigation for Improved Substrate Materials Role:PI $72,167.00 Active Level:Industry
Grant: #OPP1087022 Investigators:Pauletti, Giovanni; Steckl, Andrew 05-01-2013 -10-31-2014 Bill & Melinda Gates Foundation Paper Based Diagnostics for Tropical Disease Detection Role:PI $100,000.00 Active Level:Private Non-Profit
Grant: #PO US001-0000393878 / W911NF-11-D-0001 Investigators:Steckl, Andrew 09-10-2013 -08-31-2014 Department of the Army Research Laboratory Multi-Axial Electrospun Fiber Mats for Controlled Release of Functional Materials Role:PI $125,000.00 Awarded Level:Federal
Grant: #URC Interdisciplinary Awards Investigators:Hegener, Michael; Pauletti, Giovanni; Steckl, Andrew 04-01-2014 -03-31-2015 UC's University Research Council Clinical Assessment of a Novel Paper-based Microfluidics Device: Towards Patient-Controlled Monitoring of Blood Coagulation Role:Collaborator $25,000.00 Active Level:Internal UC
Grant: #NSF IIP-1500236 Investigators:Hegener, Michael; Pauletti, Giovanni; Steckl, Andrew 04-01-2015 -09-30-2016 National Science Foundation Developing an Engineering Prototype for Ultra-Low-Cost Blood Coagulation Diagnostics Using Paper-Based Microfluidics Role:PI $200,000.00 Awarded Level:Federal
Grant: #SSP TCN 15-026/W911NF-11-D-0001 Investigators:Steckl, Andrew 06-01-2015 -05-31-2016 Department of Defense Multi-axial Electrospun Fiber Mats for Controlled Release of Functional Materials Role:PI $150,000.00 Active Level:Federal
Grant: #S-104-000-001 / FA8650-15-C-6631 Investigators:Steckl, Andrew 10-09-2015 -01-08-2017 Air Force Research Laboratory Biomarker/Metric Identification and Sensor Development Role:PI $175,000.00 Awarded Level:Federal
Grant: #ESpin Fibers SRA Investigators:Steckl, Andrew 04-11-2016 -04-10-2017 Cambridge Display Technology, Ltd. Electrospinning of Multi-Layer Fibers for Controlled Release of Active Materials Role:PI $150,000.00 Active Level:Foreign Industry
Grant: #2018 Exhibit A_10805 Investigators:Steckl, Andrew 09-01-2018 -08-31-2019 Procter & Gamble Company Development of Aptamer Based Biosensors for Cortisol in Saliva Role:PI $55,000.00 Active Level:Industry
Grant: #2018 Exhibit A_PD 10806 Investigators:Steckl, Andrew 09-01-2018 -08-31-2019 Procter & Gamble Company Development of Aptamer Sensors for Endotoxin Detection Role:PI $55,000.00 Active Level:Industry
Grant: #R40314 Investigators:Steckl, Andrew 07-01-2019 -06-30-2020 UC's Faculty Bridge Program Electrospinning of Core-Sheath Fibers for Controlled Drug Release Role:PI $10,000.00 Active Level:Internal UC
Grant: #840-1-01; 1R61HD117424-01 Investigators:Steckl, Andrew -01-31-2029 National Institute of Child Health and Human Development Multipurpose Device for Female-initiated Nonsteroidal On-Demand Contraception Role:PI 0.00 Hold Level:Federal
Grant: #Exhibit A_Project Specification Investigators:Steckl, Andrew 09-01-2019 -08-31-2020 Procter & Gamble Company Organic Electrochemical Transistors as Bacterial Biosensors Role:PI $70,000.00 Awarded Level:Industry
Grant: #16193sc / 3-SRA-2025-1634-S-B Investigators:Steckl, Andrew 03-01-2024 -07-31-2026 Breakthrough T1D Sequential multi-molecule release from nanofiber scaffolds for improved stem cell-derived islet transplantation under the skin Role:PI 180582.00 Hold Level:Non Profit
Grant: #P&G Exhibit A Investigators:Steckl, Andrew 09-01-2019 -12-31-2019 Procter & Gamble Company Aptamer-based LFA detection of cortisol and endotoxin Role:PI $40,000.00 Awarded Level:Industry
Grant: #012467-002 Exhibit A Investigators:Steckl, Andrew 01-01-2020 -12-31-2020 Procter & Gamble Company Fluid Volume Sensor Using Fiber Membrane Pressure Transducer Role:PI $95,000.00 Awarded Level:Industry
Grant: #820-1-01 / R61HD099748 Investigators:Steckl, Andrew 09-13-2019 -08-31-2021 National Institutes of Health SMART Polymer Fibers For Tampon-Like Nonsteroidal Contraceptive Devices Role:PI $97,173.00 Awarded Level:Federal
Grant: #012998 Exhibit A Investigators:Steckl, Andrew 07-01-2020 -06-30-2021 Procter & Gamble Company Development of Aptamer Sensors for Endotoxin Detection Role:PI $58,500.00 Awarded Level:Industry
Grant: #R15CA252987 Investigators:Steckl, Andrew 09-01-2020 -08-31-2023 National Cancer Institute Controlled Release of Multiple Drugs from Electrospun Fiber Membranes in the Local Treatment of Glioblastoma Role:PI $481,543.00 Awarded Level:Federal
Grant: #65510.2012547.669301/3-SRA-2023-1425-S-B Investigators:Steckl, Andrew 08-01-2023 -07-31-2026 Juvenile Diabetes Research Foundation International Sequential multi-molecule release from nanofiber scaffolds for improved stem cell-derived islet transplantation under the skin Role:PI 100000.00 Hold Level:Non Profit
Publications
Peer Reviewed Publications
Bedford, Nicholas M; Winget, G Douglas; Punnamaraju, Srikoundinya; Steckl, Andrew J (2011). Immobilization of stable thylakoid vesicles in conductive nanofibers by electrospinning. Biomacromolecules, 12 (3) , 778-84More Information
Punnamaraju, Srikoundinya; Steckl, Andrew J (2011). Voltage control of droplet interface bilayer lipid membrane dimensions. Langmuir : the ACS journal of surfaces and colloids, 27 (2) , 618-26More Information
Kim, Duk Young; Steckl, Andrew J (2010). Electrowetting on paper for electronic paper display. ACS applied materials & interfaces, 2 (11) , 3318-23More Information
Wu, Dapeng; Han, Daewoo; Steckl, Andrew J (2010). Immunoassay on free-standing electrospun membranes. ACS applied materials & interfaces, 2 (1) , 252-8More Information
Han, Daewoo; Steckl, Andrew J (2009). Superhydrophobic and oleophobic fibers by coaxial electrospinning. Langmuir : the ACS journal of surfaces and colloids, 25 (16) , 9454-62More Information
Wu, Dapeng; Steckl, Andrew J (2009). High speed nanofluidic protein accumulator. Lab on a chip, 9 (13) , 1890-6More Information
Mahalingam, Venkataramanan; Sudarsan, Vasanthakumaran; Munusamy, Prabhakaran; van Veggel, Frank C J M; Wang, Rui; Steckl, Andrew J; Raudsepp, Mati (2008). Mg 2+-doped GaN nanoparticles as blue-light emitters: a method to avoid sintering at high temperatures. Small (Weinheim an der Bergstrasse, Germany), 4 (1) , 105-10More Information
Hagen, Joshua A; Li, Wei-Xin; Spaeth, Hans; Grote, James G; Steckl, Andrew J (2007). Molecular beam deposition of DNA nanometer films. Nano letters, 7 (1) , 133-7More Information
Lee D.;Heikenfeld J.;Birkhahn R.;Garter M.;Lee B.;Steckl A. (03-20-2000). Voltage-controlled yellow or orange emission from GaN codoped with Er and Eu. Applied Physics Letters, 76 (12) , 1525-1527More Information
Heikenfeld J.;Lee D.;Garter M.;Birkhahn R.;Steckl A. (03-13-2000). Low-voltage GaN:Er green electroluminescent devices. Applied Physics Letters, 76 (11) , 1365-1367More Information
Heikenfeld J.;Steckl A. (11-27-2000). Alternating current thin-film electroluminescence of GaN:Er. Applied Physics Letters, 77 (22) , 3520-3522More Information
Lee B.;Chi R.;Chao D.;Cheng J.;Chry I.;Beyette F.;Steckl A. (07-20-2001). High-density Er-implanted GaN optical memory devices. Applied Optics, 40 (21) , 3552-3558More Information
Steckl A.;Garter M.;Lee D.;Heikenfeld J.;Birkhahn R. (10-11-1999). Blue emission from Tm-doped GaN electroluminescent devices. Applied Physics Letters, 75 (15) , 2184-2186More Information
Citrin P.;Northrup P.;Birkhahn R.;Steckl A. (05-15-2000). Local structure and bonding of Er in GaN: A contrast with Er in Si. Applied Physics Letters, 76 (20) , 2865-2867More Information
Garter M.;Scofield J.;Birkhahn R.;Steckl A. (01-11-1999). Visible and infrared rare-earth-activated electroluminescence from indium tin oxide Schottky diodes . Applied Physics Letters, 74 (2) , 182-184More Information
Steckl A.;Birkhahn R. (12-01-1998). Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy. Applied Physics Letters, 73 (12) , 1700-1702More Information
Birkhahn R.;Steckl A. (12-01-1998). Green emission from Er-doped GaN grown by molecular beam epitaxy on Si substrates. Applied Physics Letters, 73 (15) , 2143-2145More Information
Chi C.;Steckl A. (01-08-2001). Digital thin-film color optical memory. Applied Physics Letters, 78 (2) , 255-257More Information
Lee B.K.;Steckl A.J.;Zavada J.M.;Wilson R.G. (01-01-1998). Effect of hydrogen/deuterium introduction on photoluminescence of 3C-SiC crystals. Materials Research Society Symposium - Proceedings, 513, 445-450
Saxena V.;Steckl A.J. (12-01-1998). High voltage 4H SiC rectifiers using Pt and Ni metallization. Materials Science Forum, 264-268 (PART 2) , 937-940
Devrajan J.;Steckl A.J.;Tran C.A.;Stall R.A. (12-01-1998). Optical properties of GaN films grown on SiC/Si. Materials Science Forum, 264-268 (PART 2) , 1149-1152
Naghski D.;Boyd J.;Jackson H.;Steckl A. (05-01-1998). Potential for size reduction of AlGaAs optical channel waveguide structures fabricated by focused io. Optics Communications, 150 (1-6) , 97-100More Information
Steckl A.;Garter M.;Birkhahn R.;Scofield J. (12-01-1998). Green electroluminescence from Er-doped GaN Schottky barrier diodes. Applied Physics Letters, 73 (17) , 2450-2452More Information
Birkhahn R.;Garter M.;Steckl A. (04-12-1999). Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates. Applied Physics Letters, 74 (15) , 2161-2163More Information
Chao L.;Lee B.;Chi C.;Cheng J.;Chyr I.;St?eckl A. (09-27-1999). Upconversion luminescence of Er-implanted GaN films by focused-ion-beam direct write. Applied Physics Letters, 75 (13) , 1833-1835More Information
Chao L.;Steckl A. (04-19-1999). Room-temperature visible and infrared photoluminescence from Pr-implanted GaN films by focused-ion-b. Applied Physics Letters, 74 (16) , 2364-2366More Information
Heikenfeld J.;Garter M.;Lee D.;Birkhahn R.;Steckl A. (08-30-1999). Red light emission by photoluminescence and electroluminescence from Eu-doped GaN. Applied Physics Letters, 75 (9) , 1189-1191More Information
Saxena V.;Nong J.;Steckl A. (12-01-1999). High-Voltage Ni- And Pt-SiC Schottky Diodes Utilizing Metal Field Plate Termination. IEEE Transactions on Electron Devices, 46 (3) , 456-464More Information
Madapura S.;Steckl A.;Loboda M. (03-01-1999). Heteroepitaxial growth of SiC on Si(100) and (111) by chemical vapor deposition using trimethylsilan. Journal of the Electrochemical Society, 146 (3) , 1197-1202More Information
Chao L.C.;Lee B.K.;Chi C.J.;Cheng J.;Chyr I.;Steckl A.J. (12-01-1999). Rare earth focused ion beam implantation utilizing Er and Pr liquid alloy ion sources. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 17 (6) , 2791-2794
Birkhahn R.;Hudgins R.;Lee D.;Lee B.;Steckl A.;Saleh A.;Wilson R.;Zavada J. (12-01-1999). Optical and structural properties of Er3+-doped GaN grown by MBE. Materials Research Society Symposium - Proceedings, 537
Steckl A.J.;Zavada J.M. (09-01-1999). Photonic applications of rare-earth-doped materials. MRS Bulletin, 24 (9) , 16-17
Steckl A.J.;Zavada J.M. (01-01-1999). Optoelectronic properties and applications of rare-earth-doped GaN. MRS Bulletin, 24 (9) , 33-38More Information
Chyr I.;Steckl A. (12-01-1999). Focused ion beam micromachining of GaN photonic devices. Materials Research Society Symposium - Proceedings, 537
Steckl A.;Garter M.;Birkhahn R. (12-01-1999). Visible and infrared electroluminescence from Er-doped GaN Schottky diodes. Annual Device Research Conference Digest, 200-201
Seshadri B.;Tang J.;Chyr I.;Steckl A.;Beyette F. (01-01-2000). Novel photoreceiver array with near field resolution capability. LEOS Summer Topical Meeting, 59-60
Tang J.;Lee B.;Chi R.;Steckl A.;Beyette F. (01-01-2000). Optoelectronic page-oriented database filter based on a single chip photonic VLSI design. LEOS Summer Topical Meeting, 71-72
Hommerich U.;Seo J.;MacKenzie J.;Abernathy C.;Birkhahn R.;Steckl A.;Zavada J. (01-01-2000). Comparison of the optical properties of Er3+ doped gallium nitride prepared b. Materials Research Society Symposium - Proceedings, 595
Chen J.;Steckl A.;Loboda M. (01-01-2000). Growth and characterization of N-doped SiC films from trimethylsilane. Materials Science Forum, 338
Lorenz K.;Vianden R.;Birkhahn R.;Steckl A.;Da Silva M.;Scares J.;Alves E. (01-01-2000). RBS/Channeling study of Er doped GaN films grown by MBE on Si(111) substrates. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 161, 946-951More Information
Chen J.;Steckl A.;Loboda M.
(06-01-2000).
In situ N
Tang J.;Seshadri B.;Naughton K.;Lee B.;Chi R.;Steckl A.;Beyette F. (09-01-2000). CMOS-based photoreceiver arrays for page-oriented optical storage access. IEEE Photonics Technology Letters, 12 (9) , 1234-1236More Information
Chao L.;Steckl A. (01-01-2000). CW blue-green light emission from GaN and SiC by sum-frequency generation and second harmonic genera. Journal of Electronic Materials, 29 (9) , 1059-1062More Information
Chen J.;Scofield J.;Steckl A. (10-01-2000). Formation of SiC SOI structures by direct growth on insulating layers. Journal of the Electrochemical Society, 147 (10) , 3845-3849More Information
Seshadri B.;Tang J.;Chyr I.;Steckl A.;Beyette F. (12-01-2000). Photoreceiver array with near-field resolution capability. Proceedings of SPIE - The International Society for Optical Engineering, 4109, 310-316
Tang J.;Konanki S.;Seshadri B.;Lee B.;Chi R.;Steckl A.;Beyette F. (12-01-2000). CMOS photodetectors/receivers for smart-pixel based photonic systems. Proceedings of SPIE - The International Society for Optical Engineering, 4109, 75-82
Beyette F.;Tang J.;Lee B.;Chi R.;Steckl A. (12-01-2000). Design and analysis of a smart optical storage read head for relational database applications. Proceedings of SPIE - The International Society for Optical Engineering, 4109, 317-327
Chi R.;Steckl A. (01-01-2001). Digital thin film non-volatile optical memory. Annual Device Research Conference Digest, 137-138
Heikenfeld J.;Steckl A. (01-01-2001). Rare-earth doped gan electroluminescent devices for robust flat panel displays. Annual Device Research Conference Digest, 177-178
Cheng J.;Steckl A. (11-01-2001). Mg-Ga liquid metal ion source for implantation doping of GaN. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 19 (6) , 2551-2554More Information
Chyr I.;Steckl A. (11-01-2001). GaN focused ion beam micromachining with gas-assisted etching. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 19 (6) , 2547-2550More Information
Heikenfeld J.;Steckl A. (12-01-2001). AC operation of GaN:Er thin film electroluminescent display devices. Materials Research Society Symposium - Proceedings, 639
Mitofsky A.;Papen G.;Bishop S.;Lee D.;Steckl A. (12-01-2001). Comparison of Er 3+ photoluminescence and photoluminescence excitation spectr. Materials Research Society Symposium - Proceedings, 639
Hömmerich U.;Seo J.;Abernathy C.;Steckl A.;Zavada J. (04-24-2001). Spectroscopic studies of the visible and infrared luminescence from Er doped GaN. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 81 (1-3) , 116-120More Information
Steckl A.;Heikenfeld J.;Lee D.;Garter M. (04-24-2001). Multiple color capability from rare earth-doped gallium nitride. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 81 (1-3) , 97-101More Information
Zavada J.;Gregorkiewicz T.;Steckl A. (04-24-2001). Rare earth doped semiconductors III. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 81 (1-3) , 1-2More Information
Lee D.;Steckl A. (09-24-2001). Room-temperature-grown rare-earth-doped GaN luminescent thin films. Applied Physics Letters, 79 (13) , 1962-1964More Information
Garter M.;Steckl A. (01-01-2002). Temperature behavior of visible and infrared electroluminescent devices fabricated on erbium-doped G. IEEE Transactions on Electron Devices, 49 (1) , 48-54More Information
Nyein E.;Hömmerich U.;Heikenfeld J.;Lee D.;Steckl A.;Zavada J. (01-01-2002). Spectroscopic evaluation of rare earth doped GaN for full-color display applications. Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, 654
Heikenfeld J.;Steckl A. (04-01-2002). Electroluminescent devices using a high-temperature stable GaN-based phosphor and thick-film dielect. IEEE Transactions on Electron Devices, 49 (4) , 557-563More Information
Lee B.;Chi C.;Chyr I.;Lee D.;Beyette F.;Steckl A. (04-01-2002). In-situ Er-doped GaN optical storage devices using high-resolution focused ion beam milling. Optical Engineering, 41 (4) , 742-743More Information
Cheng L.;Pan M.;Scofield J.;Steckl A.
(01-01-2002).
Growth and doping of SiC-thin films on low-stress, amorphous Si
Steckl A.;Heikenfeld J.;Lee D.;Garter M.;Baker C.;Wang Y.;Jones R. (07-01-2002). Rare-earth-doped GaN: Growth, properties, and fabrication of electroluminescent devices. IEEE Journal on Selected Topics in Quantum Electronics, 8 (4) , 749-766More Information
Heikenfeld J.;Steckl A. (08-01-2002). Contrast-enhancement in black dielectric electroluminescent devices. IEEE Transactions on Electron Devices, 49 (8) , 1348-1352More Information
Heikenfeld J.;Steckl A. (09-01-2002). Rare-earth-doped GaN switchable color electroluminescent devices. IEEE Transactions on Electron Devices, 49 (9) , 1545-1551More Information
Baker C.;Heikenfeld J.;Steckl A.
(11-01-2002).
Photoluminescent and electroluminescent Zn
Cheng J.;Steckl A. (11-01-2002). Focused ion beam fabricated microgratings for integrated optics applications. IEEE Journal on Selected Topics in Quantum Electronics, 8 (6) , 1323-1330More Information
Lee D.;Steckl A. (01-06-2003). Selective enhancement of blue electroluminescence from GaN:Tm. Applied Physics Letters, 82 (1) , 55-57More Information
Nyein E.;Hömmerich U.;Heikenfeld J.;Lee D.;Steckl A.;Zavada J. (03-17-2003). Spectral and time-resolved photoluminescence studies of Eu-doped GaN. Applied Physics Letters, 82 (11) , 1655-1657More Information
Wang Y.;Steckl A. (01-27-2003). Three-color integration on rare-earth-doped GaN electroluminescent thin films. Applied Physics Letters, 82 (4) , 502-504More Information
Chyr I.;Lee B.;Chao L.;Steckl A. (12-01-1999). Damage generation and removal in the Ga+ focused ion beam micromachining of G. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 17 (6) , 3063-3067
Lee D.;Heikenfeld J.;Steckl A.;Hommerich U.;Seo J.;Braud A.;Zavada J. (08-06-2001). Optimum Er concentration for in situ doped GaN visible and infrared luminescence. Applied Physics Letters, 79 (6) , 719-721More Information
Pan M.;Steckl A. (07-07-2003). Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition. Applied Physics Letters, 83 (1) , 9-11More Information
Cheng L.;Steckl A.;Scofield J. (10-01-2003). SiC thin-film Fabry-Perot interferometer for fiber-optic temperature sensor. IEEE Transactions on Electron Devices, 50 (10) , 2159-2164More Information
Lee D.;Steckl A.
(09-15-2003).
Enhanced blue emission from Tm-doped Al
Pacheco F.;Sánchez A.;Molina S.;Araújo D.;Devrajan J.;Steckl A.;García R. (01-01-1999). Electron microscopy study of SiC obtained by the carbonization of Si(111). Thin Solid Films, 343-344 (1-2) , 305-308More Information
Chen J.;Steckl A.J.;Loboda M.J. (05-01-1998). Molecular beam epitaxy growth of SiC on Si(111) from silacyclobutane. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 16 (3) , 1305-1308
Baker C.;Heikenfeld J.;Munasinghe C.;Steckl A.;Nyein E.;Hommerich U.
(12-09-2003).
1.5 ?m Zn
Steckl A.;Heikenfeld J.;Munasinghe C.;Lee D.;Wang Y.;Jones W. (12-09-2003). Inorganic electroluminescent displays: The impact of new materials. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2, 656-657
Pellé F.;Auzel F.;Zavada J.M.;Lee D.S.;Steckl A.J. (12-15-2003). New spectroscopic data of erbium ions in GaN thin films. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 105 (1-3) , 126-131More Information
Hömmerich U.;Nyein E.;Lee D.;Heikenfeld J.;Steckl A.;Zavada J. (12-15-2003). Photoluminescence studies of rare earth (Er, Eu, Tm) in situ doped GaN. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 105 (1-3) , 91-96More Information
Banerjee S.;Baker C.;Klotzkin D.;Steckl A.;Nyieh E.;Hommerich H. (12-09-2003). Gain characteristics of Er-doped ZSG waveguide optical amplifiers. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 1, 136-137
Nyein E.;Hömmerich U.;Steckl A.;Lee D.;Zavada J. (12-09-2003). Spectroscopic studies of GaN:Er, GaN:Eu, and GaN/AlGaN:Tm prepared by solid-source molecular beam ep. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2, 876-877
Hömmerich U.;Nyein E.;Lee D.;Steckl A.;Zavada J.
(12-01-2003).
Photoluminescence properties of in situ Tm-doped Al
Cheng L.;Steckl A.;Scofield J. (12-01-2003). Effect of trimethylsilane flow rate on the growth of SiC thin-films for fiber-optic temperature sens. Journal of Microelectromechanical Systems, 12 (6) , 797-803More Information
Park J.;Steckl A. (11-15-2004). Laser action in Eu-doped GaN thin-film cavity at room temperature. Applied Physics Letters, 85 (20) , 4588-4590More Information
Saxena V.;Steckl A.J.
(12-01-1998).
Fast and anisotropic reactive ion etching of 4H and 6H SiC in NF
Seo J.;Hömmerich U.;Lee D.;Heikenfeld J.;Steckl A.;Zavada J. (07-17-2002). Thermal quenching of photoluminescence from Er-doped GaN thin films. Journal of Alloys and Compounds, 341 (1-2) , 62-66More Information
Munasinghe C.;Heikenfeld J.;Dorey R.;Whatmore R.;Bender J.;Wager J.;Steckl A. (02-01-2005). High brightness ZnS and GaN electroluminescent devices using PZT thick dielectric layers. IEEE Transactions on Electron Devices, 52 (2) , 194-203More Information
Steckl A.;Heikenfeld J. (12-01-2004). Emissive electrowetting devices for Hybrid I/O™ displays. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 1, 250-251
Baker C.;Heikenfeld J.;Yu Z.;Steckl A. (03-01-2004). Optical amplification and electroluminescence at 1.54 ?m in Er-doped zinc silicate germanate on sili. Applied Physics Letters, 84 (9) , 1462-1464More Information
Garter M.;Birkhahn R.;Steckl A.;Scofield J. (12-01-1999). Visible and infrared rare-earth activated electroluminescence from erbium doped GaN. Materials Research Society Symposium - Proceedings, 537
Banerjee S.;Baker C.;Steckl A.;Klotzkin D.
(03-01-2005).
Optical properties of Er in Er-doped Zn
Peng H.;Lee C.;Everitt H.;Lee D.;Steckl A.;Zavada J. (01-31-2005). Effect of optical excitation energy on the red luminescence of Eu3+ in GaN. Applied Physics Letters, 86 (5) , 1-3More Information
Heikenfeld J.;Steckl A. (04-29-2004). Fabrication and performance characteristics of black-dielectric electroluminescent 160 × 80-pixel di. Journal of the Society for Information Display, 12 (1) , 57-64More Information
Heikenfeld J.;Steckl A. (01-01-2005). Intense switchable fluorescence in light wave coupled electrowetting devices. Applied Physics Letters, 86 (1) More Information
Heikenfeld J.;Steckl A. (07-04-2005). High-transmission electrowetting light valves. Applied Physics Letters, 86 (15) , 1-3More Information
Steckl A.J.;Chyr I. (12-01-1999). Focused ion beam micromilling of GaN and related substrate materials (sapphire, SiC, and Si). Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 17 (2) , 362-365
Park J.;Steckl A. (09-01-2005). Demonstration of a visible laser on silicon using Eu-doped GaN thin films. Journal of Applied Physics, 98 (5) More Information
Wojtowicz T.;Ruterana P.;Lee D.;Steckl A. (11-07-2005). Transmission electron microscopy of GaN layers in-situ doped with Er during plasma assisted MBE. Physica Status Solidi C: Conferences, 2 (7) , 2484-2487More Information
Lee D.;Steckl A.;Rack P.;Fitz-Gerald J.
(11-07-2005).
Cathodoluminescence and its temperature dependence in Tm-doped Al
Nyein E.;Hömmerich U.;Lee D.;Steckl A.;Zavada J.
(11-07-2005).
Spectroscopic studies of the infrared emission from Tm doped Al
Steckl A.;Heikenfeld J.;Allen S. (09-01-2005). Light wave coupled flat panel displays and solid-state lighting using hybrid inorganic/organic mater. IEEE/OSA Journal of Display Technology, 1 (1) , 157-166More Information
Munasinghe C.;Steckl A. (02-21-2006). GaN:Eu electroluminescent devices grown by interrupted growth epitaxy. Thin Solid Films, 496 (2) , 636-642More Information
Vrielinck H.;Izeddin I.;Ivanov V.;Gregorkiewicz T.;Callens F.;Lee D.;Steckl A.;Khaidukov N. (12-01-2005). On 2.7 ?m emission from Er-doped large bandgap hosts. Materials Research Society Symposium Proceedings, 866, 85-90
Dierolf V.;Fleischman Z.;Sandmann C.;Wakahara A.;Fujiwara T.;Munasinghe C.;Steckl A. (12-01-2005). Combined excitation emission spectroscopy of europium ions in GaN and AlGaN films. Materials Research Society Symposium Proceedings, 866, 73-78
Munasinghe C.;Steckl A.;Nyein E.E.;Hömmerich U.;Peng H.;Everitt H.;Fleischman Z.;Dierolf V.;Zavada J. (12-01-2005). GaN:Eu interrupted growth epitaxy (IGE): Thin film growth and electroluminescent devices. Materials Research Society Symposium Proceedings, 866, 41-52
Nyein E.E.;Hömmerich U.;Munasinghe C.;Steckl A.J.;Zavada J.M. (12-01-2005). Excitation-wavelength dependent and time-resolved photoluminescence studies of europium doped GaN gr. Materials Research Society Symposium Proceedings, 866, 67-72
Dierolf V.;Fleischman Z.;Sandmann C.;Munasinghe C.;Steckl A. (12-01-2005). Site selective spectroscopy of Eu-doped GaN. 2005 Conference on Lasers and Electro-Optics, CLEO, 1, 306-308
Lee C.;Everitt H.;Lee D.;Steckl A.;Zavada J. (06-15-2004). Temperature dependence of energy transfer mechanisms in Eu-doped GaN. Journal of Applied Physics, 95 (12) , 7717-7724More Information
Diggs D.;Hagen J.;Yu Z.;Heckman E.;Kenneth Hopkins F.;Grote J.;Steckl A. (12-01-2005). Molecular binding and enhanced photoluminescence of bromocresol purple in marine derived DNA. Proceedings of SPIE - The International Society for Optical Engineering, 5934, 1-8More Information
Grote J.G.;Heckman E.M.;Diggs D.E.;Hagen J.A.;Yaney P.P.;Steckl A.J.;Clarson S.J.;He G.S.;Zheng Q.;Prasad P.N.;Zetts J.S.;Kenneth Hopkins F. (12-01-2005). DNA-based materials for electro-optic applications: Current status. Proceedings of SPIE - The International Society for Optical Engineering, 5934, 1-6More Information
Heikenfeld J.;Steckl A. (11-01-2004). Liquid light. Information Display, 20 (11) , 26-31
Heikenfeld J.;Steckl A. (12-01-2005). Electrowetting-based pixelation for light wave coupling displays. Digest of Technical Papers - SID International Symposium, 36 (1) , 746-749More Information
Heikenfeld J.;Steckl A.J. (12-01-2005). Electrowetting light valves with greater than 80'% transmission, unlimited view angle, and video res. Digest of Technical Papers - SID International Symposium, 36 (2) , 1674-1677
Katchkanov V.;Mosselmans J.F.W.;O'Donnell K.P.;Nogales E.;Hernandez S.;Martin R.W.;Steckl A.;Lee D.S. (01-01-2006). Extended X-ray absorption fine structure studies of GaN epilayers doped with Er. Optical Materials, 28 (6-7) , 785-789More Information
Park J.;Steckl A. (01-01-2006). Visible lasing from GaN:Eu optical cavities on sapphire substrates. Optical Materials, 28 (6-7) , 859-863More Information
Nyein E.;Hömmerich U.;Zavada J.;Lee D.;Steckl A.;Nepal N.;Lin J.;Jiang H. (01-01-2004). Ultraviolet and blue emission properties of Tm doped AlGaN and AlN. OSA Trends in Optics and Photonics Series, 96 A, 1281-1282
Park J.;Steckl A. (04-11-2006). Site specific Eu 3+ stimulated emission in GaN host. Applied Physics Letters, 88 (1) More Information
Hagen J.;Li W.;Steckl A.;Grote J. (05-15-2006). Enhanced emission efficiency in organic light-emitting diodes using deoxyribonucleic acid complex as. Applied Physics Letters, 88 (17) More Information
Yu Z.;Hagen J.;Grote J.;Steckl A. (05-23-2006). Red photoluminescence emission of laser dye doped DNA and PMMA. Proceedings of SPIE - The International Society for Optical Engineering, 6117More Information
Hagen J.;Li W.;Grote J.;Steckl A. (05-23-2006). Red/Blue electroluminescence from Europium-doped organic light emitting diodes. Proceedings of SPIE - The International Society for Optical Engineering, 6117More Information
Chen J.;Scofield J.;Steckl A. (12-01-2000). Formation of SiC SOI structures by direct growth on insulating layers. Journal of the Electrochemical Society, 147 (10) , 3840-3844
Li W.;Jones R.;Allen S.;Heikenfeld J.;Steckl A.
(06-01-2006).
Maximizing Alq
Park J.;Steckl A.;Rajagopal P.;Roberts J.;Piner E. (01-01-2006). Growth temperature dependence of optical modal gain and loss in GaN:Eu active medium on Si. Optics Express, 14 (12) , 5307-5312More Information
Seo J.;Hömmerich U.;Steckl A.;Birkhahn B.;Zavada J. (09-01-2006). Green luminescence and excited state thermalization in Er-doped gallium nitride. Journal of the Korean Physical Society, 49 (3) , 943-946
Steckl A. (12-01-2005). Light emission from rare earth lumophores in inorganic and organic hosts. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2005, 652-653More Information
Hommerich U.;Seo J.T.;MacKenzie J.D.;Abernathy C.R.;Birkhahnt R.;Steckl A.J.;Zavada J.M. (01-01-2000). Comparison of the optical properties of er3+ doped gallium nitride prepared b. Materials Research Society Symposium - Proceedings, 595, W11651-W11656More Information
Garter M.;Birkhahn R.;Steckl A.J.;Scofield J. (12-01-1999). Visible and infrared rare-earth activated electroluminescence from erbium doped GaN. MRS Internet Journal of Nitride Semiconductor Research, 4 (SUPPL. 1)
Birkhahn R.H.;Hudgins R.;Lee D.S.;Lee B.K.;Steckl A.J.;Saleh A.;Wilson R.G.;Zavada J.M. (12-01-1999). Optical and structural properties of Er 3+doped GaN grown by MBE. MRS Internet Journal of Nitride Semiconductor Research, 4 (SUPPL. 1)
Chyr I.;Steckl A.J. (12-01-1999). Focused ion beam micromachining of GaN photonic devices. MRS Internet Journal of Nitride Semiconductor Research, 4 (SUPPL. 1)
Chen J.;Steckl A.J.;Loboda M.J. (12-01-1998). Heteroepitaxial growth of SiC on Si by gas source MBE with silacyclobutane. Materials Science Forum, 264-268 (PART 1) , 239-242
Heikenfeld J.;Steckl A. (12-01-2003). Inorganic EL displays at the crossroads. Information Display, 19 (12) , 20-25
Dierolf V.;Fleischman Z.;Sandmann C.;Munasinghe C.;Steckl A. (12-01-2005). Combined excitation emission spectroscopy of Eu-doped GaN. Conference on Lasers and Electro-Optics Europe - Technical DigestMore Information
Saxena V.;Steckl A. (12-01-1998). Chapter 3 Building Blocks for SiC Devices: Ohmic Contacts, Schottky Contacts, and p-n Junctions. Semiconductors and Semimetals, 52 (C) , 77-160More Information
Lee D.;Heikenfeld J.;Steckl A. (01-21-2002). Growth-temperature dependence of Er-doped GaN luminescent thin films. Applied Physics Letters, 80 (3) , 344-346More Information
Lee D.;Steckl A. (03-18-2002). Lateral color integration on rare-earth-doped GaN electroluminescent thin films. Applied Physics Letters, 80 (11) , 1888-1890More Information
Lee D.;Steckl A. (02-04-2002). Ga flux dependence of Er-doped GaN luminescent thin films. Applied Physics Letters, 80 (5) , 728-730More Information
Lee D.;Steckl A. (09-23-2002). Enhanced blue and green emission in rare-earth-doped GaN electroluminescent devices by optical photo. Applied Physics Letters, 81 (13) , 2331-2333More Information
Hömmerich U.;Seo J.T.;MacKenzie J.D.;Abernathy C.R.;Birkhahn R.;Steckl A.J.;Zavada J.M. (12-01-2000). Comparison of the optical properties of Er 3+ doped gallium nitride prepared . MRS Internet Journal of Nitride Semiconductor Research, 5 (SUPPL. 1)
Dierolf V.;Fleischman Z.;Sandmann C.;Munasinghe C.;Steckl A. (01-01-2006). Site selective spectroscopy of Eu-doped GaN. Optics InfoBase Conference Papers
Grote J.; Hagen J.; Heckman E.; Hopkins F.; Steckl A.; Yaney P.; Zetts J. (01-01-2005). DNA based photonic materials. Optics InfoBase Conference Papers
Dierolf V.;Fleischman Z.;Sandmann C.;Munasinghe C.;Steckl A. (01-01-2005). Site selective spectroscopy of Eu-doped GaN. Optics InfoBase Conference Papers
Everitt H.; Lee D.; Munasinghe C.; Peng H.; Steckl A. (01-01-2005). Relaxation dynamics in rare earth-doped GaN. Optics InfoBase Conference Papers
Steckl A.;Lee D.;Heikenfeld J.;Munasinghe C.;Pan M.;Wang Y.;Yu Z.;Park J.;Baker C.;Jones R. (01-01-2003). Rare earth doped GaN electroluminescent devices. IEEE International Symposium on Compound Semiconductors, Proceedings, 2003-January, 147-148More Information
Lee D.S.;Steckl A.J.;Hömmerich U.;Nyein E.E.;Rack P.;Fitzgerald J.;Zavada J.M. (01-01-2003). Enhanced blue emission from tm-doped AlxGa1-xN electroluminescent thin films. 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings, 5-6More Information
Steckl A.;Allen S.;Heikenfeld J. (01-01-2003). Hybrid inorganic/organic luminescent devices. 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings, 38-39More Information
Munasinghe C.;Heikenfeld J.;Dorey R.;Whatmore R.;Bender J.;Wager J.;Steckl A. (01-01-2003). Improved luminance and efficiency of ZnS:Mn and GaN:Eu TDEL devices using PZT thick dielectric films. 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings, 75-76More Information
Citrin P.;Northrup P.;Birkhahn R.;Steckl A. (01-01-2000). Local structure and bonding of luminescent Er in GaN: A contrast with Er in Si. IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, 2000-January, 15-22More Information
Zavada J.;Gregorkiewicz T.;Steckl A. (04-24-2001). Preface: Rare earth doped semiconductors III. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 81 (1-3) , 1-2More Information
Sivaraman R.;Clarson S.J.;Lee B.K.;Steckl A.J.;Reinhardt B.A. (07-17-2000). Photoluminescence studies and read/write process of a strong two-photon absorbing chromophore. Applied Physics Letters, 77 (3) , 328-330More Information
Lee C.W.;Everitt H.O.;Javada J.M.;Steckl A.J. (01-01-2003). Temperature dependent visible photoluminescence of Eudoped GaN on silicon. OSA Trends in Optics and Photonics Series, 88, 999-1000
Nyein E.;Hömmerich U.;Heikenfeld J.;Lee D.;Steckl A.;Zavada J. (01-01-2003). Characterization of the red light emission from Eu doped GaN. OSA Trends in Optics and Photonics Series, 88, 1005-1006
Izeddin I.;Gregorkiewicz T.;Lee D.;Steckl A. (10-01-2004). Photoluminescence and excitation spectroscopy of the 1.5 ?m Er-related band in MBE-grown GaN layers. Superlattices and Microstructures, 36 (4-6) , 701-705More Information
Li J.;Steckl A.;Golecki I.;Reidinger F.;Wang L.;Ning X.;Pirouz P. (12-01-1993). Structural characterization of nanometer SiC films grown on Si. Applied Physics Letters, 62 (24) , 3135-3137More Information
Steckl A.;Xu J.;Mogul H.;Mogren S. (12-01-1993). Doping-induced selective area photoluminescence in porous silicon. Applied Physics Letters, 62 (16) , 1982-1984More Information
Steckl A.;Devrajan J.;Tran C.;Stall R. (01-01-1997). Growth and characterization of GaN thin films SiC SOI substrates. Journal of Electronic Materials, 26 (3) , 217-223More Information
Steckl A.;Yih P.
(12-01-1992).
Residue-free reactive ion etching of ?-SiC in CHF
Steckl A.;Devrajan J.;Tran C.;Stall R. (10-07-1996). SiC rapid thermal carbonization of the (111)Si semiconductor-on-insulator structure and subsequent m. Applied Physics Letters, 69 (15) , 2264-2266More Information
Steckl A.;Mogren S.;Roth M.;Li J. (12-01-1992). Atomic probe imaging of ?-SiC thin films grown on (100) Si. Applied Physics Letters, 60 (12) , 1495-1497More Information
Steckl A.;Mogul H.;Mogren S. (12-01-1992). Localized fabrication of Si nanostructures by focused ion beam implantation. Applied Physics Letters, 60 (15) , 1833-1835More Information
Yuan C.;Steckl A.;Loboda M. (12-01-1994). Effect of carbonization on the growth of 3C-SiC on Si (111) by silacyclobutane. Applied Physics Letters, 64 (22) , 3000-3002More Information
Steckl A.;Devrajan J.;Tlali S.;Jackson H.;Tran C.;Gorin S.;Ivanova L. (12-16-1996). Characterization of 3C-SiC crystals grown by thermal decomposition of methyltrichlorosilane. Applied Physics Letters, 69 (25) , 3824-3826More Information
Chen P.;Steckl A. (12-01-1995). Selective compositional mixing in GaAs/AlGaAs superlattice induced by low dose Si focused ion beam i. Journal of Applied Physics, 77 (11) , 5616-5624More Information
Steckl A.;Nelson R.;French B.;Schecter D. (01-01-2017). APPLICATION OF CHARGE-COUPLED DEVICES TO INFRARED DETECTION AND IMAGING., 256-269
Lin C.M.;Steckl A.J.;Chow T.P. (01-01-1988). Electrical Properties of Ga-Implanted Si p<sup>+</sup>-n Shallow Junctio. IEEE Electron Device Letters, 9 (11) , 594-597More Information
Pan W.;Steckl A. (01-01-1990). Reactive Ion Etching of SiC Thin Films by Mixtures of Fluorinated Gases and Oxygen. Journal of the Electrochemical Society, 137 (1) , 212-220More Information
Lin C.;Steckl A. (01-01-1990). Fabrication of sub-micrometer PMOSFETs with sub-100 nm p+-n shallow junctions. Solid State Electronics, 33 (4) , 472-474More Information
Steckl A.;Li J. (01-01-1992). Epitaxial growth of ?-SiC on Si by RTCVD with C<inf>3</inf>H<inf&. IEEE Transactions on Electron Devices, 39 (1) , 64-74More Information
Jackson H.E.;Choo A.G.;Weiss B.L.;Boyd J.T.;Steckl A.J.;Chen P.;Burnham R.D.;Smith S.C. (12-01-1992). Raman and photoluminescence characterization of AlGaAs multiple-quantum-well structures formed by fo. Proceedings of SPIE - The International Society for Optical Engineering, 1678, 154-158
Li J.;Yih P.;Steckl A. (01-01-1993). Thickness Determination of SiC-on-Si Thin Films by Anisotropic Reactive Ion Etching and Preferential. Journal of the Electrochemical Society, 140 (1) , 178-182More Information
Kumar M.;Gupta V.;DeBrabander G.;Chen P.;Boyd J.;Steckl A.;Choo A.;Jackson H.;Burnham R.;Smith S. (01-01-1993). Optical Channel Waveguides in AlGaAs Multiple-Quantum-Well Structures Formed by Focused Ion-Beam-Ind. IEEE Photonics Technology Letters, 5 (4) , 435-438More Information
Li J.;Steckl A. (01-01-1993). Accurate Determination of Defects in the Gate Oxide of Si Metal Oxide Semiconductor Devices by Propa. Journal of the Electrochemical Society, 140 (6) , L89-L92More Information
Yih P.;Steckl A. (01-01-1993). Effects of Hydrogen Additive on Obtaining Residue-Free Reactive Ion Etching of (?-SiC in Fluorinated. Journal of the Electrochemical Society, 140 (6) , 1813-1824More Information
Mogul H.;Steckl A. (01-01-1993). Electrical Properties of Si p<sup>+</sup>-n Junctions for Sub-0.25 ?m CM. IEEE Transactions on Electron Devices, 40 (10) , 1823-1829More Information
Steckl A.J.;Su J.N.;Xu J.;Li J.P.;Yuan C.;Yih P.H.;Mogul H.C. (12-01-1993). Characterization of photoluminescence from anodically etched SiC/Si heterostructures. Materials Research Society Symposium Proceedings, 298, 361-366
Li J.;Steckl A. (12-01-1993). AFM study of nucleation and void formation in SiC carbonization of Si. Materials Research Society Symposium Proceedings, 280, 739-744
Steckl A.J.;Xu J.;Mogul H.C. (12-01-1993). Photoluminescence of chemically etched polycrystalline and amorphous Si thin films. Materials Research Society Symposium Proceedings, 298, 211-216
Steckl A.;Su J. (12-01-1993). High voltage, temperature-hard 3C-SiC schottky diodes using All-Ni metallization. Technical Digest - International Electron Devices Meeting, 695-998
Tong Q.;Gosele U.;Yuan C.;Steckl A. (12-01-1993). Feasibility study of SiC on oxide by wafer bonding and layer transferring. IEEE International SOI Conference, 60-61
Choo A.;Cao X.;Tlali S.;Jackson H.;Chen P.;Steckl A.;Boyd J. (01-01-1994). Raman and photoluminescence characterization of FIB patterned AlGaAs/GaAs multiple quantum wells. Materials Research Society Symposium Proceedings, 324, 193-198
Yan H.;Wang H.;Steckl A. (01-01-1994). Low energy ion beam assisted deposition of low resistivity aluminum using TMAA. Materials Research Society Symposium Proceedings, 316, 863-868
Chen P.;Steckl A. (01-01-1994). Vacancy injection enhanced Al-Ga inter-diffusion in Si FIB implanted superlattice. Materials Research Society Symposium Proceedings, 325, 37-42
Steckl A.;Su J.;Xu J.;Li J.;Yuan C.;Yih P.;Mogul H. (12-01-1994). Selective-area room temperature visible photoluminescence from SiC/Si heterostructures. Applied Physics Letters, 64 (11) , 1419-1420More Information
Steckl A.;Xu J.;Mogul H. (01-01-1994). Crystallinity and Photoluminescence in Stain-Etched Porous Si. Journal of the Electrochemical Society, 141 (3) , 674-679More Information
Yih P.;Li J.;Steckl A. (01-01-1994). SiC/Si Heterojunction Diodes Fabricated by Self-Selective and by Blanket Rapid Thermal Chemical Vapo. IEEE Transactions on Electron Devices, 41 (3) , 281-287More Information
Steckl A.;Yuan C.;Tong Q.;Gösele U.;Loboda M. (01-01-1994). SiC Silicon-On-Insulator Structures by Direct Carbonization Conversion and Postgrowth from Silacyclo. Journal of the Electrochemical Society, 141 (6) , L66-L68More Information
Xu J.;Steckl A. (12-01-1994). Fabrication of visibly photoluminescent Si microstructures by focused ion beam implantation and wet . Applied Physics Letters, 65 (16) , 2081-2083More Information
Kumar M.;Goo Choo A.;Chen P.;De Brabander G.;Boyd J.;Jackson H.;Steckl A.;Burnham R.;Smith S. (01-01-1994). Characterization of optical channel waveguides formed by fib induced compositional mixing in algaas . Superlattices and Microstructures, 15 (4) , 421-425More Information
Xu J.;Steckl A. (01-01-1994). Visible Electroluminescence from Stain-Etched Porous Si Diodes. IEEE Electron Device Letters, 15 (12) , 507-509More Information
Yih P.;Steckl A. (01-01-1995). Residue-Free Reactive Ion Etching of Silicon Carbide in Fluorinated Plasmas. Journal of the Electrochemical Society, 142 (1) , 312-319More Information
Li J.;Steckl A. (01-01-1995). Nucleation and Void Formation Mechanisms in SiC Thin Film Growth on Si by Carbonization. Journal of the Electrochemical Society, 142 (2) , 634-641More Information
Steckl A.J.;Xu J. (01-01-1995). Si Oxyhydrides on Stain-Etched Porous Si Thin Films and Correlation with Crystallinity and Photolumi. Journal of the Electrochemical Society, 142 (5) , L69-L71More Information
Xu J.;Steckl A.J. (05-01-1995). Stain-etched porous silicon visible light emitting diodes. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 13 (3) , 1221-1224More Information
Steckl A.;Chen P.;Cao X.;Jackson H.;Kumar M.;Boyd J. (07-01-1995). GaAs quantum well distributed Bragg reflection laser with AlGaAs/GaAs superlattice gratings fabricat. Applied Physics Letters, 67 (2) , 179-181More Information
Yih P.;Steckl A. (01-01-1995). Residue-Free Reactive Ion Etching of 3C-SiC and 6H-SiC in Fluorinated Mixture Plasmas. Journal of the Electrochemical Society, 142 (8) , 2853-2860More Information
Wei L.;Vaudin M.;Hwang C.S.;White G.;Xu J.;Steckl A.J. (01-01-1995). Heat conduction in silicon thin films: Effect of microstructure. Journal of Materials Research, 10 (8) , 1889-1896More Information
Steckl A.;Chen P.;Jackson H.;Choo A.;Cao X.;Boyd J.;Kumar M. (11-01-1995). Review of focused ion beam implantation mixing for the fabrication of GaAs-based optoelectronic devi. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 13 (6) , 2570-2575More Information
Steckl A. (01-01-1997). Exploring the frontiers of optoelectronics with FIB technology. Advanced Workshop on Frontiers in Electronics, Proceedings, WOFE, 47-50
Chaudhuri J.;Cheng X.;Yuan C.;Steckl A. (01-05-1997). Highly perfect thin films of SiC: X-ray double crystal diffractometry and X-ray double crystal topog. Thin Solid Films, 292 (1-2) , 1-6More Information
Steckl A.;Li J. (12-01-1992). Uniform ?-SiC thin-film growth on Si by low pressure rapid thermal chemical vapor deposition. Applied Physics Letters, 60 (17) , 2107-2109More Information
Steckl A.;Li J. (08-28-1992). Rapid thermal chemical vapor deposition growth of nanometer-thin SiC on silicon. Thin Solid Films, 216 (1) , 149-154More Information
Yih P.H.;Saxena V.;Steckl A.J. (07-01-1997). A review of SiC reactive ion etching in fluorinated plasmas. Physica Status Solidi (B) Basic Research, 202 (1) , 605-624
Steckl A.;Roth M.;Powell J.;Larkin D. (12-01-1993). Atomic probe microscopy of 3C SiC films grown on 6H SiC substrates. Applied Physics Letters, 62 (20) , 2545-2547More Information
Steckl A.;Devrajan J.;Choyke W.;Devaty R.;Yoganathan M.;Novak S. (01-01-1996). Effect of annealing temperature on 1.5 ?m photoluminescence from Er-implanted 6H-SiC. Journal of Electronic Materials, 25 (5) , 869-873More Information
Mogul H.;Steckl A.;Novak S. (12-01-1993). Shallow Si p+-n junctions fabricated by focused ion beam Ga + implantation through thin Ti and TiSi2. Journal of Applied Physics, 74 (4) , 2318-2322More Information
Mogul H.C.;Steckl A.J.;Webster G.;Pawlik M.;Novak S. (12-01-1992). Electrochemical capacitance-voltage depth profiling of nanometer-scale layers fabricated by Ga+ focu. Applied Physics Letters, 61 (5) , 554-556More Information
Hite J.;Thaler G.;Khanna R.;Abernathy C.;Pearton S.;Park J.;Steckl A.;Zavada J. (10-09-2006). Optical and magnetic properties of Eu-doped GaN. Applied Physics Letters, 89 (13) More Information
Kim D.;Steckl A. (02-05-2007). Liquid-state field-effect transistors using electrowetting. Applied Physics Letters, 90 (4) More Information
Hagen J.;Grote J.;Li W.;Steckl A.;Diggs D.;Zetts J.;Nelson R.;Hopkins F. (12-01-2006). Organic light emitting diode with a DNA biopolymer electron blocking layer. Proceedings of SPIE - The International Society for Optical Engineering, 6333More Information
Li W.;Hagen J.;Jones R.;Heikenfeld J.;Steckl A. (03-01-2007). Color tunable organic light emitting diodes using Eu complex doping. Solid-State Electronics, 51 (3) , 500-504More Information
Mu H.;Li W.;Jones R.;Steckl A.;Klotzkin D. (09-01-2007). A comparative study of electrode effects on the electrical and luminescent characteristics of Alq<. Journal of Luminescence, 126 (1) , 225-229More Information
Yu Z.;Zhou Y.;Klotzkin D.;Grote J.;Steckl A. (04-30-2007). Stimulated emission of sulforhodamine 640 doped DNA distributed feedback (DFB) laser devices. Proceedings of SPIE - The International Society for Optical Engineering, 6470More Information
Steckl A. (01-01-2007). DNA - A new material for photonics?. Nature Photonics, 1 (1) , 3-5More Information
Yu Z.;Li W.;Hagen J.;Zhou Y.;Klotzkin D.;Grote J.;Steckl A. (03-20-2007). Photoluminescence and lasing from deoxyribonucleic acid (DNA) thin films doped with sulforhodamine. Applied Optics, 46 (9) , 1507-1513More Information
Allen S.;Steckl A. (06-01-2007). ELiXIR - Solid-state luminaire with enhanced light extraction by internal reflection. IEEE/OSA Journal of Display Technology, 3 (2) , 155-159More Information
So F.;Steckl A. (06-01-2007). Journal of Display Technology: Guest Editorial. IEEE/OSA Journal of Display Technology, 3 (2) , 90More Information
Steckl A.;Park J.;Zavada J. (07-01-2007). Prospects for rare earth doped GaN lasers on Si. Materials Today, 10 (7-8) , 20-27More Information
Lin C.M.;Steckl A.J.;Chow T.P. (12-01-1988). Si p+-n shallow junction fabrication using on-axis Ga +. Applied Physics Letters, 52 (24) , 2049-2051More Information
Steckl A.;Hagen J.;Yu Z.;Jones R.;Li W.;Han D.;Kim D.;Spaeth H.;Grote J.;Hopkins F. (12-01-2006). Biopolymers in light emitting devices. SID Conference Record of the International Display Research Conference, 25-27
Allen S.;Steckl A. (12-01-2006). Efficiency and stability of perylene-based dyes for emissive displays. SID Conference Record of the International Display Research Conference, 59-62
Peng H.;Lee C.;Everitt H.;Munasinghe C.;Lee D.;Steckl A. (10-22-2007). Spectroscopic and energy transfer studies of Eu3+ centers in GaN. Journal of Applied Physics, 102 (7) More Information
Steckl A.;Chen P.;Cao X.;Jackson H.;Kumar M.;Boyd J. (12-01-1994). GaAs quantum well distributed Bragg reflection laser with AlGaAs/GaAs superlattice gratings fabricat. Applied Physics Letters, 67, 1786
Yuan C.;Steckl A.;Chaudhuri J.;Thokala R.;Loboda M. (12-01-1995). Reduced temperature growth of crystalline 3C-SiC films on 6H-SiC by chemical vapor deposition from s. Journal of Applied Physics, 78 (2) , 1271-1273More Information
Steckl A.;Xu J.;Mogul H. (12-01-1993). Photoluminescence from stain-etched polycrystalline Si thin films. Applied Physics Letters, 62 (17) , 2111-2113More Information
Steckl A.;Yuan C.;Li J.;Loboda M. (12-01-1993). Growth of crystalline 3C-SiC on Si at reduced temperatures by chemical vapor deposition from silacyc. Applied Physics Letters, 63 (24) , 3347-3349More Information
Nepal N.;Bedair S.;El-Masry N.;Lee D.;Steckl A.;Zavada J. (12-06-2007). Correlation between compositional fluctuation and magnetic properties of Tm-doped AlGaN alloys. Applied Physics Letters, 91 (22) More Information
Lin C.M.;Steckl A.J.;Chow T.P. (12-01-1989). Sub-100-nm p + -n shallow junctions fabricated by group III dual ion implanta. Applied Physics Letters, 54 (18) , 1790-1792More Information
Higuchi-Rusli R.;Corelli J.;Steckl A.;Jin H.
(12-01-1988).
Characteristics and surface analysis of ion beam deposition from binary boron platinum (Pt
Park J.;Steckl A. (01-01-2008). Effect of process conditions on gain and loss in GaN:Eu cavities on different substrates. Physica Status Solidi (A) Applications and Materials Science, 205 (1) , 26-29More Information
Hite J.;Thaler G.T.;Park J.H.;Steckl A.J.;Abernathy C.R.;Zavada J.M.;Pearton S. (12-01-2006). Magnetic and optical properties of Eu-doped GaN. Materials Research Society Symposium Proceedings, 955, 94-96
Allen S.;Steckl A. (04-21-2008). A nearly ideal phosphor-converted white light-emitting diode. Applied Physics Letters, 92 (14) More Information
Jones R.A.;Li W.;Hagen J.;Steckl A.J. (12-01-2006). Organic photovoltaic devices with nanometer scale thickness by molecular beam deposition. 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006, 2, 764-765
Steckl A.J.;Hagen J.A.;Yu Z.;Jones R.A.;Li W.;Han D.;Kim D.Y.;Spaeth H.;Grote J.G.;Hopkins F.K. (12-01-2006). Challenges and opportunities for biophotonic devices in the liquid state and the solid state. 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006, 1, 159-161
Bickle J.;Iyer S.;Mantei T.;Papautsky I.;Schulz M.;Shanov V.;Smith L.;Steckl A. (12-01-2006). Integration of nanoscale science and technology into undergraduate curricula. 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006, 1, 403-405
Fleischman Z.;Tafon P.;Dierolf V.;Munasinghe C.;Steckl A. (12-01-2007). Identification of defect-trap-related europium sites in gallium nitride. Physica Status Solidi (C) Current Topics in Solid State Physics, 4 (3) , 834-837More Information
Nepal N.;Zavada J.;Lee D.;Steckl A. (08-25-2008). Dynamics of ultraviolet emissions in Tm-doped AlN using above band gap excitation. Applied Physics Letters, 93 (6) More Information
Steckl A. (09-22-2008). NanoBioMaterials - From BioLEDs to tissue engineering. Biennial University/Government/Industry Microelectronics Symposium - Proceedings, 41-43More Information
Kim D.;Herman S.;Steckl A. (09-22-2008). I-V and gain characteristics of electrowetting-based liquid field effect transistor. Biennial University/Government/Industry Microelectronics Symposium - Proceedings, 2-5More Information
Bedford N.;Han D.;Steckl A. (09-22-2008). Electrospun biopolymer-based micro/nanofibers. Biennial University/Government/Industry Microelectronics Symposium - Proceedings, 139-141More Information
Steckl A.;Spaeth H.;Singh K.;Grote J.;Naik R. (11-21-2008). Chirality of sulforhodamine dye molecules incorporated in DNA thin films. Applied Physics Letters, 93 (19) More Information
Jones R.;Li W.;Spaeth H.;Steckl A. (12-11-2008). Direct write electron beam patterning of DNA complex thin films. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26 (6) , 2567-2571More Information
Wang R.;Steckl A.J. (12-18-2008). Effect of Si and Er co-doping on green electroluminescence from GaN:Er ELDs. Materials Research Society Symposium Proceedings, 1068, 83-88
Wang R.;Steckl A.;Brown E.;Hommerich U.;Zavada J. (03-09-2009). Effect of Si codoping on Eu3+ luminescence in GaN. Journal of Applied Physics, 105 (4) More Information
Bodiou L.;Braud A.;Doualan J.L.;Moncor? R.;Park J.H.;Munasinghe C.;Steckl A.J.;Lorenz K.;Alves E.;Daudin B. (03-09-2009). Optically active centers in Eu implanted, Eu in situ doped GaN, and Eu doped GaN quantum dots. Journal of Applied Physics, 105 (4) More Information
Nepal N.;Zavada J.;Lee D.;Steckl A.;Sedhain A.;Lin J.;Jiang H. (03-31-2009). Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys. Applied Physics Letters, 94 (11) More Information
Glinka Y.;Everitt H.;Lee D.;Steckl A. (03-03-2009). Effect of Tm3+ -induced defects on the photoexcitation energy relaxation in Tm-doped Alx Ga1-x N. Physical Review B - Condensed Matter and Materials Physics, 79 (11) More Information
Glinka Y.;Foreman J.;Everitt H.;Lee D.;Steckl A.
(05-08-2009).
Direct and indirect photoluminescence excitation and ultraviolet emission from Tm-doped Al
Mahalingam V.;Bovero E.;Munusamy P.;Van Veggel F.C.J.M.;Wang R.;Steckl A.J.
(06-19-2009).
Optical and structural characterization of blue-emitting Mg2+- and Zn
Han D.;Steckl A. (08-18-2009). Superhydrophobic and oleophobic fibers by coaxial electrospinning. Langmuir, 25 (16) , 9454-9462More Information
You H.;Spaeth H.;Linhard V.;Steckl A. (10-06-2009). Role of surfactants in the interaction of dye molecules in natural DNA polymers. Langmuir, 25 (19) , 11698-11702More Information
Fleischman Z.;Munasinghe C.;Steckl A.;Wakahara A.;Zavada J.;Dierolf V. (11-01-2009). Excitation pathways and efficiency of Eu ions in GaN by site-selective spectroscopy. Applied Physics B: Lasers and Optics, 97 (3) , 607-618More Information
Wang R.;Steckl A. (02-15-2010). Effect of growth conditions on Eu3+ luminescence in GaN. Journal of Crystal Growth, 312 (5) , 680-684More Information
Wang R.;Steckl A.;Nepal N.;Zavada J. (02-05-2010). Electrical and magnetic properties of GaN codoped with Eu and Si. Journal of Applied Physics, 107 (1) More Information
You H.;Steckl A. (07-12-2010). Three-color electrowetting display device for electronic paper. Applied Physics Letters, 97 (2) More Information
Kim D.;Steckl A. (06-15-2010). Complementary electrowetting devices on plasma-treated fluoropolymer surfaces. Langmuir, 26 (12) , 9474-9483More Information
Li W.;Jones R.;Spaeth H.;Steckl A. (08-09-2010). Dose effects in electron beam irradiation of DNA-complex thin films. Applied Physics Letters, 97 (6) More Information
Han D.;Boyce S.T.;Steckl A.J. (12-01-2008). Versatile core-sheath biofibers using coaxial electrospinning. Materials Research Society Symposium Proceedings, 1094, 33-38
Steckl A.J.;Park J.H. (12-01-2006). Visible lasing on Si using rare earth doped GaN. IEEE International Conference on Group IV Photonics GFP, 209-210
Zhong M.;Steckl A. (12-01-2010). Eu-doped GaN films grown by phase shift epitaxy. Applied Physics Express, 3 (12) More Information
Kim D.;Steckl A. (11-24-2010). Electrowetting on paper for electronic paper display. ACS Applied Materials and Interfaces, 2 (11) , 3318-3323More Information
Bedford N.;Steckl A. (08-25-2010). Photocatalytic self cleaning textile fibers by coaxial electrospinning. ACS Applied Materials and Interfaces, 2 (8) , 2448-2455More Information
Steckl A.;You H.;Kim D. (04-11-2011). Flexible electrowetting and electrowetting on flexible substrates. Proceedings of SPIE - The International Society for Optical Engineering, 7956More Information
Steckl A.;Spaeth H.;You H.;Gomez E.;Grote J. (01-01-2011). DNA as an optical material. Optics and Photonics News, 22 (7-8) , 34-39More Information
Gomez E.;Spaeth H.;Steckl A.;Grote J. (10-11-2011). Fabrication of natural DNA-containing organic light emitting diodes. Proceedings of SPIE - The International Society for Optical Engineering, 8103More Information
Han D.;Filocamo S.;Kirby R.;Steckl A. (12-28-2011). Deactivating chemical agents using enzyme-coated nanofibers formed by electrospinning. ACS Applied Materials and Interfaces, 3 (12) , 4633-4639More Information
Punnamaraju S.;You H.;Steckl A. (05-22-2012). Triggered release of molecules across droplet interface bilayer lipid membranes using photopolymeriz. Langmuir, 28 (20) , 7657-7664More Information
Bedford N.;Pelaez M.;Han C.;Dionysiou D.;Steckl A. (07-07-2012). Photocatalytic cellulosic electrospun fibers for the degradation of potent cyanobacteria toxin micro. Journal of Materials Chemistry, 22 (25) , 12666-12674More Information
You H.;Steckl A. (09-01-2012). Electrowetting on flexible substrates. Journal of Adhesion Science and Technology, 26 (12-17) , 1931-1939More Information
Bedford N.;Dickerson M.;Drummy L.;Koerner H.;Singh K.;Vasudev M.;Durstock M.;Naik R.;Steckl A. (09-01-2012). Nanofi ber-based bulk-heterojunction organic solar cells using coaxial electrospinning. Advanced Energy Materials, 2 (9) , 1136-1144More Information
Steckl A. (02-08-2013). Circuits on cellulose. IEEE Spectrum, 50 (2) , 48-61More Information
Steckl A.; Su J. (12-01-1994). SiC devices for space electronics: Phase I-high voltage, temperature hard contacts. SAE Technical PapersMore Information
Fraiwan A.;Sundermier S.;Han D.;Steckl A.J.;Hassett D.J.;Choi S. (06-01-2013). Enhanced performance of micro-electro-mechanical-systems (MEMS) microbial fuel cells using electrosp. Fuel Cells, 13 (3) , 336-341More Information
You H.;Steckl A. (08-26-2013). Versatile electrowetting arrays for smart window applications-from small to large pixels on fixed an. Solar Energy Materials and Solar Cells, 117, 544-548More Information
Han D.;Steckl A. (08-28-2013). Triaxial electrospun nanofiber membranes for controlled dual release of functional molecules. ACS Applied Materials and Interfaces, 5 (16) , 8241-8245More Information
You H.;Steckl A. (05-01-2013). Lightweight electrowetting display on ultra-thin glass substrate. Journal of the Society for Information Display, 21 (5) , 192-197More Information
Ouchen F.;Gomez E.;Joyce D.;Yaney P.;Kim S.;Williams A.;Steckl A.;Venkat N.;Grote J. (12-11-2013). Investigation of DNA nucleobases - Thin films for potential applications in electronics and photonic. Proceedings of SPIE - The International Society for Optical Engineering, 8817More Information
Zhong M.;Roberts J.;Kong W.;Brown A.;Steckl A. (01-06-2014). P-type GaN grown by phase shift epitaxy. Applied Physics Letters, 104 (1) More Information
Zocco A.T.;You H.;Hagen J.A.;Steckl A.J. (03-07-2014). Pentacene organic thin-film transistors on flexible paper and glass substrates. Nanotechnology, 25 (9) More Information
Purandare S.;Gomez E.;Steckl A. (03-07-2014). High brightness phosphorescent organic light emitting diodes on transparent and flexible cellulose f. Nanotechnology, 25 (9) More Information
You H.;Steckl A. (10-01-2013). Electrowetting on non-fluorinated hydrophobic surfaces. Journal of the Society for Information Display, 21 (10) , 411-416More Information
Ouchen F.;Gomez E.;Joyce D.;Williams A.;Kim S.;Heckman E.;Johnson L.;Yaney P.;Venkat N.;Steckl A.;Kajzar F.;Rau I.;Pawlicka A.;Prasad P.;Grote J. (01-01-2014). Latest advances in biomaterials: From deoxyribonucleic acid to nucleobases. Proceedings of SPIE - The International Society for Optical Engineering, 8983More Information
Blumenschein N.;Han D.;Caggioni M.;Steckl A. (06-11-2014). Magnetic particles as liquid carriers in the microfluidic lab-in-tube approach to detect phase chang. ACS Applied Materials and Interfaces, 6 (11) , 8066-8072More Information
Li H.;Han D.;Pauletti G.;Steckl A. (10-21-2014). Blood coagulation screening using a paper-based microfluidic lateral flow device. Lab on a Chip, 14 (20) , 4035-4041More Information
Chu S.;Steckl A. (01-01-1988). The Effect of Trench-Gate-Oxide Structure on EPROM Device Operation. IEEE Electron Device Letters, 9 (6) , 284-286More Information
Fraiwan A.;Adusumilli S.P.;Han D.;Steckl A.J.;Call D.F.;Westgate C.R.;Choi S. (01-01-2014). Microbial power-generating capabilitie on micro-/nano-structured anodes in micro-sized microbial fue. Fuel Cells, 14 (6) , 801-809More Information
Gomez E.;Steckl A. (03-18-2015). Improved performance of OLEDs on cellulose/epoxy substrate using adenine as a hole injection layer. ACS Photonics, 2 (3) , 439-445More Information
Gomez E.;Venkatraman V.;Grote J.;Steckl A. (11-24-2014). DNA bases thymine and adenine in bio-organic light emitting diodes. Scientific Reports, 4More Information
Venkatraman V.;Steckl A. (12-05-2015). Integrated OLED as excitation light source in fluorescent lateral flow immunoassays. Biosensors and Bioelectronics, 74, 150-155More Information
Ouchen F.;Gomez E.;Joyce D.;Williams A.;Kim S.;Heckman E.;Johnson L.;Yaney P.;Venkat N.;Steckl A.;Kajzar F.;Rau I.;Pawlicka A.;Prasad P.;Grote J. (01-01-2015). Bio-based materials for electronic applications. Nonlinear Optics Quantum Optics, 46 (2-4) , 199-225
Li H.;Han D.;Pauletti G.;Steckl A. (01-01-2014). Point-of-care blood coagulation monitoring using lateral flow device. 18th International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2014, 1575-1577
Zhao D.;Wang T.;Han D.;Rusinek C.;Steckl A.;Heineman W. (09-15-2015). Electrospun Carbon Nanofiber Modified Electrodes for Stripping Voltammetry. Analytical Chemistry, 87 (18) , 9315-9321More Information
Blumenschein N.;Han D.;Steckl A. (09-04-2015). Phase diagram characterization using magnetic beads as liquid carriers. Journal of Visualized Experiments, 2015 (103) More Information
Gomez E.;Venkatraman V.;Grote J.;Steckl A. (01-01-2015). Organic Light-Emitting Diodes: Exploring the Potential of Nucleic Acid Bases in Organic Light Emitti. Advanced Materials, 27 (46) , 7680More Information
Gomez E.;Venkatraman V.;Grote J.;Steckl A. (01-01-2015). Exploring the Potential of Nucleic Acid Bases in Organic Light Emitting Diodes. Advanced Materials, 27 (46) , 7552-7562More Information
Han D.;Sherman S.;Filocamo S.;Steckl A. (04-15-2017). Long-term antimicrobial effect of nisin released from electrospun triaxial fiber membranes. Acta Biomaterialia, 53, 242-249More Information
Han D.;Yu X.;Chai Q.;Ayres N.;Steckl A. (04-05-2017). Stimuli-Responsive Self-Immolative Polymer Nanofiber Membranes Formed by Coaxial Electrospinning. ACS Applied Materials and Interfaces, 9 (13) , 11858-11865More Information
Li H.;Han D.;Hegener M.;Pauletti G.;Steckl A. (03-01-2017). Flow reproducibility of whole blood and other bodily fluids in simplified no reaction lateral flow a. Biomicrofluidics, 11 (2) More Information
Han D.;Sasaki M.;Yoshino H.;Kofuji S.;Sasaki A.;Steckl A. (08-01-2017). In-vitro evaluation of MPA-loaded electrospun coaxial fiber membranes for local treatment of gliobla. Journal of Drug Delivery Science and Technology, 40, 45-50More Information
Hegener M.;Li H.;Han D.;Steckl A.;Pauletti G. (09-01-2017). Point-of-care coagulation monitoring: first clinical experience using a paper-based lateral flow dia. Biomedical Microdevices, 19 (3) More Information
Venkatraman V.;Steckl A. (12-15-2017). Quantitative Detection in Lateral Flow Immunoassay Using Integrated Organic Optoelectronics. IEEE Sensors Journal, 17 (24) , 8343-8349More Information
Han D.;Steckl A. (12-13-2017). Selective pH-Responsive Core-Sheath Nanofiber Membranes for Chem/Bio/Med Applications: Targeted Deli. ACS Applied Materials and Interfaces, 9 (49) , 42653-42660More Information
Venkatraman V.;Liedert R.;Kozak K.;Steckl A. (12-01-2016). Integrated NFC power source for zero on-board power in fluorescent paper-based lateral flow immunoas. Flexible and Printed Electronics, 1 (4) More Information
Ray P.;Han D.;Steckl A. (12-01-2016). Urine-powered (galvanic) electric cell and sensor on paper substrate. Flexible and Printed Electronics, 1 (4) More Information
Li H.;Han D.;Pauletti G.;Steckl A. (01-01-2018). Engineering a simple lateral flow device for animal blood coagulation monitoring. Biomicrofluidics, 12 (1) More Information
Tirgar A.;Han D.;Steckl A. (06-06-2018). Absorption of Ethylene on Membranes Containing Potassium Permanganate Loaded into Alumina-Nanopartic. Journal of Agricultural and Food Chemistry, 66 (22) , 5635-5643More Information
Li H.;Han D.;Pauletti G.;Hegener M.;Steckl A. (06-28-2018). Correction: Correcting the effect of hematocrit in whole blood coagulation analysis on paper-based l. Analytical Methods, 10 (24) , 2939More Information
Li H.;Han D.;Pauletti G.;Hegener M.;Steckl A. (06-28-2018). Correcting the effect of hematocrit in whole blood coagulation analysis on paper-based lateral flow . Analytical Methods, 10 (24) , 2869-2874More Information
Steckl A.;Ray P. (10-26-2018). Stress Biomarkers in Biological Fluids and Their Point-of-Use Detection. ACS Sensors, 3 (10) , 2025-2044More Information
Li H.;Steckl A. (01-02-2019). Paper Microfluidics for Point-of-Care Blood-Based Analysis and Diagnostics. Analytical Chemistry, 91 (1) , 352-371More Information
Dalirirad S.;Steckl A. (03-15-2019). Aptamer-based lateral flow assay for point of care cortisol detection in sweat. Sensors and Actuators, B: Chemical, 79-86More Information
Li H.;Han D.;Pauletti G.;Hegener M.;Steckl A. (01-01-2018). Cellulose-based lateral flow device for low-cost point-of-care blood coagulation monitoring. International Conference on Nanotechnology for Renewable Materials 2018, 1, 255-264
Fraiwan A.;Adusumilli S.P.;Han D.;Steckl A.J.;Call D.F.;Westgate C.R.;Choi S. (01-01-2014). Micro-/nano-structured anodes for enhanced performance of micro-sized microbial fuel cells. Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop, 203-206
Ray P.;Steckl A.J. (05-24-2019). Label-Free Optical Detection of Multiple Biomarkers in Sweat, Plasma, Urine, and Saliva. ACS Sensors, 4 (5) , 1346-1357More Information
Han D.;Steckl A.J. (01-01-2019). Coaxial Electrospinning Formation of Complex Polymer Fibers and their Applications. ChemPlusChemMore Information
Chyan O.;Franh D.;Hubbard A.;Li J.;Steckl A. (01-01-1994). Measurement of complete Auger electron emission angular distributions from ?-SiC films on Si(100). Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 12 (2) , 457-464More Information
McDonald J.F.;Steckl A.J.;Neugebauer C.A.;Carlson R.O. (01-01-1986). Multilevel interconnections for wafer scale integration. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 4 (6) , 3127-3138More Information
Das P.;Steckl A. (12-01-1970). Current oscillations in cadmium sulphide with optically polished parallel surfaces. Applied Physics Letters, 16 (4) , 163-165More Information
Arellano M.E.;Das P.K.;Steckl A. (01-01-1972). ACOUSTO-ELECTRIC CURRENT STEPS IN OPTICALLY POLISHED PARALLEL CADMIUM SULPHIDE., 168-170
Steckl A.;Das P. (01-01-1972). MODEL OF THE ACOUSTOELECTRIC OSCILLATOR: FIELD-INDUCED FREQUENCY MODULATION, HARMONIC AND OFF-AXIS G., 158-164
Steckl A. (01-01-1976). Infrared charge coupled devices. Infrared Physics, 16 (1-2) , 65-73More Information
Steckl A.
(01-01-1976).
Infrared optical properties of sputtered In
Steckl A.;Nelson R.;French B.;Gudmundsen R.;Schechter D. (01-01-1975). Application of Charge-Coupled Devices to Infrared Detection and Imaging. Proceedings of the IEEE, 63 (1) , 67-74More Information
Steckl A. (01-01-1975). INJECTION EFFICIENCY IN HYBRID IRCCD'S., 85-91
Steckl A. (01-01-1975). LOW TEMPERATURE SILICON CCD OPERATION., 383-388
Elabd H.;Steckl A.;Vidinski W. (01-01-1980). Effect of substrate orientation on the properties of the Si/PbS heterojunction. Solar Cells, 1 (2) , 199-208More Information
Steckl A.J.;Tam K.Y.;Motamedi M.E. (01-01-1979). READ-OUT CHARACTERISTICS OF THE PbS-Si HJ DETECTOR. Advances in Chemistry Series, 650-654
Chow T.;Steckl A.;Motamedi M.;Brown D.
(01-01-1979).
MoSi
Sheu S.;Steckl A. (01-01-1979). FREQUENCY CHARACTERISTICS OF p-n PbS-Si HETEROJUNCTION IR DETECTORS. Infrared Physics, 351-353
Elabd H.;Steckl A. (12-01-1980). Structural and compositional properties of the PbS-Si heterojunction. Journal of Applied Physics, 51 (1) , 726-737More Information
Steckl A.;Elabd H.;Tam K.;Motamedi M.;Sheu S. (01-01-1980). The Optical and Detector Properties of the PbS-Si Heterojunction. IEEE Transactions on Electron Devices, 27 (1) , 126-133More Information
Motamedi M.;Tam K.;Steckl A. (01-01-1980). Design and Evaluation of Ion-Implanted CMOS Structures. IEEE Transactions on Electron Devices, 27 (3) , 578-583More Information
Elabd H.;Steckl A. (05-01-1980). Auger analysis of the PbS-Si heterojunction. Journal of Electronic Materials, 9 (3) , 525-549More Information
Steckl A.;Mohammed G. (12-01-1980). The effect of ambient atmosphere in the annealing of indium tin oxide films. Journal of Applied Physics, 51 (7) , 3890-3895More Information
Steckl A.;Sheu S. (01-01-1980). The a.c. admittance of the p-n PbS?Si heterojunction. Solid-State Electronics, 23 (7) , 715-720More Information
Chow T.;Brown D.;Steckl A.;Garfinkel M. (12-01-1980). Silane silicidation of Mo thin films. Journal of Applied Physics, 51 (11) , 5981-5985More Information
Smith G.E.;Steckl A.J. (01-01-1980). TWO-DIMENSIONAL INTEGRATED CIRCUIT PROCESS MODELING PROGRAM - RECIPE. Technical Digest - International Electron Devices Meeting, 227-230
Tiemann J.J.;Vogelsong T.L.;Steckl A.J. (01-01-1980). CHARGE DOMAIN ANALOG SAMPLED DATA FILTERS. EASCON Record: IEEE Electronics and Aerospace Systems Convention, 140-145
Chow T.;Steckl A.
(01-01-1980).
PLANAR PLASMA ETCHING OF Mo AND MoSi
Zetterlund B.;Steckl A.J. (01-01-1980). LOW TEMPERATURE RECOMBINATION LIFETIME IN Si MOSFET's. Technical Digest - International Electron Devices Meeting, 284-288
Tam K.;Steckl A. (01-01-1981). Integrated PbS-Si IR Detector Read-Out. IEEE Electron Device Letters, EDL-2 (5) , 130-132More Information
Chow T.;Steckl A.;Brown D. (12-01-1981). The effect of annealing on the properties of silicidized molybdenum thin films. Journal of Applied Physics, 52 (10) , 6331-6336More Information
Okazaki S.;Chow T.;Steckl A. (01-01-1981). Edge-Defined Patterning of Hyperfine Refractory Metal Silicide MOS Structures. IEEE Transactions on Electron Devices, 28 (11) , 1364-1368More Information
Steckl A.;McDonald J.;Gutmann R. (01-01-1981). VLSI DESIGN AUTOMATION AND INTERACTIVE MODELING FOR ELECTRON BEAM LITHOGRAPHY. Journal of macromolecular science. Chemistry, 172-176
Vidinski W.;Steckl A.;Corelli J. (01-01-1982). Photoexcitation properties of infrared active defects induced by neutron irradiation in silicon. Journal of Nuclear Materials, 108-109 (C) , 693-699More Information
Smith G.;Steckl A. (01-01-1982). RECIPE—A Two-Dimensional VLSI Process Modeling Program. IEEE Transactions on Electron Devices, 29 (2) , 216-221More Information
Chow T.;Steckl A. (01-01-1982). Refractory MoSi2 and MoSi2/Polysilicon Bulk CMOS Circuits. IEEE Electron Device Letters, 3 (2) , 37-40More Information
Tiemann J.J.;Vogelsong T.L.;Steckl A.J. (01-01-1982). Charge Domain Recursive Filters. IEEE Journal of Solid-State Circuits, 17 (3) , 597-605More Information
Chow T.P.;Steckl A.J.
(12-01-1982).
Plasma etching of sputtered Mo and MoSi
Rude C.;Chow T.;Steckl A.
(12-01-1982).
Characterization of NbSi
Bencuya S.S.;Steckl A.J.;Vogelsong T.L.;Tiemann J.J. (01-01-1982). Dynamic Packet Splitting in Charge Domain Devices. IEEE Electron Device Letters, 3 (9) , 268-270More Information
Bencuya S.S.;STeckl A.J.;Vogelsong T.L. (12-01-1982). COEFFICIENT ACCURACY FOR CDD PACKET SPLITTING TECHNIQUES. Technical Digest - International Electron Devices Meeting, 123-126
Vidinski W.;Corelli J.;Steckl A. (12-01-1982). CORRELATION OF STRESS-SYMMETRY EXPERIMENTS WITH PHOTOEXCITATION AND DECAY PROCESSES FOR INFRARED-ACT. Electrochemical Society Extended Abstracts, 82-2, 361-362
Chow T.;Steckl A. (12-01-1982). DEVELOPMENT OF REFRACTORY GATE METALLIZATION FOR VLSI. Electrochemical Society Extended Abstracts, 82-2, 353-354
Follett D.;Weiss K.;Moore J.;Steckl A.;Liu W. (12-01-1982). POLARITY REVERSAL OF PMMA BY TREATMENT WITH CHLOROSILANES. Electrochemical Society Extended Abstracts, 82-2, 321-322
Vogelsong T.L.;Tiemann J.J.;Steckl A.J. (12-01-1982). HIGH-Q BANDPASS FILTER DEMONSTRATING CHARGE DOMAIN TECHNOLOGY. Technical Digest - International Electron Devices Meeting, 123-126
Chow T.P.;Hamzeh K.;Steckl A.J. (12-01-1983). Thermal oxidation of niobium silicide thin films. Journal of Applied Physics, 54 (5) , 2716-2719More Information
Vidinski W.;Steckl A.;Corelli J. (12-01-1983). Correlation of photoluminescence and symmetry studies with photoexcitation and decay processes of in. Journal of Applied Physics, 54 (7) , 4097-4103More Information
Chow D.;McDonald J.;King D.;Smith W.;Molnar K.;Steckl A. (01-01-1983). IMAGE PROCESSING APPROACH TO FAST, EFFICIENT PROXIMITY CORRECTION FOR ELECTRON BEAM LITHOGRAPHY. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1 (4) , 1383-1390More Information
Chow T.;Steckl A. (01-01-1983). Refractory Metal Silicides: Thin-Film Properties and Processing Technology. IEEE Transactions on Electron Devices, 30 (11) , 1480-1497More Information
Chow T.;Steckl A. (12-01-1983). REVIEW OF REFRACTORY GATES FOR MOS VLSI. Technical Digest - International Electron Devices Meeting, 513-517
Chow T.;Steckl A. (12-01-1983). REVIEW OF PLASMA ETCHING OF REFRACTORY METAL SILICIDES. Proceedings - The Electrochemical Society, 83-10, 362-381
Chow D.;McDonald J.;King D.;Steckl A. (12-01-1983). COMPARISON BETWEEN HAAR AND WALSH TRANSFORM 'THINNING' OF THE PATTERN DATABASE FOR PROXIMITY EFFECT ., 65-74
Lu W.;Chow T.;Steckl A.;Katz W. (12-01-1983). THERMAL OXIDATION OF SPUTTERED SILICON CARBIDE THIN FILMS. Electrochemical Society Extended Abstracts, 83-1, 133
Chow T.;Steckl A. (12-01-1983). REVIEW OF PLASMA ETCHING OF REFRACTORY METAL SILICIDES. Electrochemical Society Extended Abstracts, 83-1, 328-329
Haslam M.;McDonald J.;King D.;Bourgeois M.;Chow D.;Steckl A. (01-01-1984). TWO-DIMENSIONAL HAAR THINNING FOR DATA BASE COMPACTION IN FOURIER PROXIMITY CORRECTION FOR ELECTRON . Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 3 (1) , 165-173More Information
Hamadeh H.;Corelli J.;Steckl A.;Berry I. (01-01-1984). FOCUSED Ga** plus BEAM DIRECT IMPLANTATION FOR Si DEVICE FABRICATION. Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 3 (1) , 91-93More Information
Vogelsong T.L.;Tiemann J.J.;Steckl A.J. (01-01-1985). Charge-Domain Integrated Circuits for Signal Processing. IEEE Journal of Solid-State Circuits, 20 (2) , 562-570More Information
Liu W.;Corelli J.;Steckl A.;Moore J.;Silverman J. (12-01-1984). Polymethyl methacrylate resist sensitivity enhancement in x-ray lithography by in situ polymerizatio. Applied Physics Letters, 44 (10) , 973-975More Information
Moore J.;Corelli J.;Steckl A.;Warden J.;Tarro R.;Liu W.;Randall J. (08-01-1984). RESIST SENSITIVITY ENHANCEMENT IN MICROLITHOGRAPHY BY IN-SITU POLYMERIZATION. American Chemical Society, Polymer Preprints, Division of Polymer Chemistry, 25 (2) , 105-106
Lu W.;Steckl A. (01-01-1984). Thermal Oxidation of Sputtered Silicon Carbide Thin Films. Journal of the Electrochemical Society, 131 (8) , 1907-1914More Information
Bencuya S.;Steckl A. (01-01-1984). Charge-Packet Splitting In Charge-Domain Devices. IEEE Transactions on Electron Devices, 31 (10) , 1494-1501More Information
McDonald J.;Rogers E.;Rose K.;Steckl A. (01-01-1984). TRIALS OF WAFER-SCALE INTEGRATION. IEEE Spectrum, 21 (10) , 32-39More Information
Steckl A.;Moore J.;Corelli J.;Liu W. (12-01-1984). IMAGE ENHANCEMENT IN HIGH-RESLUTION LITHOGRAPHY THROUGH POLYMER GRAFTING TECHNIQUES. Digest of Technical Papers - Symposium on VLSI Technology, 60-61
Lu W.;Steckl A.;Chow T. (01-01-1985). COMPLETELY CONSUMED CARBIDE (C**3) - A NEW PROCESS FOR DIELECTRIC ISOLATION. Electrochemical Society Extended Abstracts, 85-1, 327-329
Lu W.;Steckl A.;Chow T. (01-01-1985). COMPLETELY CONSUMED CARBIDE (C**3) - A NEW PROCESS FOR DIELECTRIC ISOLATION. Proceedings - The Electrochemical Society, 85-5, 244-252
Chow T.P.;Steckl A.J. (01-01-1985). CRITIQUE OF REFRACTORY GATE APPLICATIONS FOR MOS VLSI. VLSI Electronics, Microstructure Science, 9, 37-91
Tarro R.;Warden J.;Corelli J.;Moore J.;Steckl A.;Kumar S. (12-01-1985). ELECTRON SPIN RESONANCE STUDIES OF IRRADIATED POLYMETHYLMETHACRYLATE (PMMA)., 537-544
King D.;Steckl A.;Morgenstern J.;McDonald J.;Bourgeois M.;Yemc D.;Elminyawi I. (01-01-1986). FLIP-AND-SHIFT SIGNAL ENHANCEMENT APPLICATION FOR A PREDICTIVE ELECTRON-BEAM PATTERN REGISTRATION MO. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 4 (1) , 273-279More Information
Kim S.;Choi J.;Pulver D.;Moore J.;Corelli J.;Steckl A.;Randall J. (01-01-1986). OPTIMIZATION OF SOLVENT DEVELOPMENT IN RADIATION INDUCED GRAFT LITHOGRAPHY OF POLY(METHYLMETHACRYLAT. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 4 (1) , 403-408More Information
Chu S.;Corelli J.;Steckl A.;Reuss R.;Clark W.;Rensch D.;Morris W. (01-01-1986). COMPARISON OF NPN TRANSISTORS FABRICATED WITH BROAD BEAM AND SPATIAL PROFILING USING FOCUSED BEAM IO. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 4 (1) , 375-379More Information
Sugiura J.;Lu W.;Cadien K.;Steckl A. (01-01-1986). REACTIVE ION ETCHING OF SiC THIN FILMS USING FLUORINATED GASES. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 4 (1) , 349-354More Information
Steckl A.;Murarka S.;Corelli J. (01-01-1986). IN-SITU PROCESSING OF SEMICONDUCTOR DEVICES AND CUSTOM INTEGRATED CIRCUITS. Proceedings of the Custom Integrated Circuits Conference, 586-590
Lu W.J.;Steckl A.J. (01-01-1986). Electrical Characteristics of Si Devices Fabricated with Completely Consumed Carbide (C3) Dielectric. Journal of the Electrochemical Society, 133 (6) , 1180-1185More Information
Steckl A. (01-01-1986). Particle-Beam Fabrication and In Situ Processing of Integrated Circuits. Proceedings of the IEEE, 74 (12) , 1753-1774More Information
Steckl A.;Lin C.;Chu S.;Corelli J. (01-01-1986). Simulation of graded-base bipolar transistor characteristics fabricated with a focused ion beam. Microelectronic Engineering, 5 (1-4) , 179-189More Information
Steckl A.;Balakrishnan S.;Jin H.;Corelli J. (01-01-1986). Micromachining of polyimide films with focused ion beams. Microelectronic Engineering, 5 (1-4) , 461-462More Information
Corelli J.;Steckl A.;Pulver D.;Randall J. (01-01-1987). Ultralow dose effects in ion-beam induced grafting of polymethylmethacrylate (PMMA). Nuclear Inst. and Methods in Physics Research, B, 19-20 (PART 2) , 1009-1012More Information
Zetterlund B.;Steckl A. (01-01-1987). Low-Temperature Operation of Silicon Surface-Channel Charge-Coupled Devices. IEEE Transactions on Electron Devices, 34 (1) , 39-51More Information
Bencuya S.;Steckl A.;Burkey B. (01-01-1987). Impact of edge effects on charge-packet-splitting accuracy. Solid State Electronics, 30 (3) , 299-305More Information
Pan W.;Steckl A. (12-01-1987). ANISOTROPIC AND SELECTIVE REACTIVE ION ETCHING OF SiC IN CHF//3 AND OXYGEN PLASMA. Materials Research Society Symposia Proceedings, 76, 157-162
Chow T.P.;Steckl A.J.
(12-01-1980).
Plasma etching characteristics of sputtered MoSi
Steckl A.;Tam K.;Motamedi M. (12-01-1979). Direct injection readout of the p-n PbS-Si heterojunction detector. Applied Physics Letters, 35 (7) , 537-539More Information
Chow T.P.;Steckl A.J.
(12-01-1980).
Size effects in MoSi
Zetterlund B.;Steckl A. (12-01-1981). Low temperature recombination lifetime in Si metal oxide semiconductor field effect transistors. Applied Physics Letters, 39 (2) , 155-156More Information
Higuchi-Rusli R.;Corelli J.;Steckl A.;Cadien K. (07-01-1987). Development of test bed system for high melting temperature alloy fabrication and mass spectroscopy . Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 5 (4) , 2073-2076More Information
Steckl A. (01-01-1979). Call for Papers. Physics Today, 32 (4) , 15More Information
Hiouchi-Rusli R.;Corelli J.;Steckl A.;Jin H. (07-01-1987). Surface Analysis Of Palladium Boride Liquid Metal Ion Beam Deposition On Silicon Single-Crystal Soli. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 5 (4) , 1362-1366More Information
McDonald J.;Rajapakse R.;Lin H.;Selvaraj R.;Corelli J.;Jin H.;Balakrishnan S.;Steckl A. (06-30-1987). Optimized focused ion beam inspection and repair of wafer scale interconnections. Proceedings of SPIE - The International Society for Optical Engineering, 773, 206-215More Information
Steckl A. (01-01-1977). Low temperature signal linearity and harmonic distortion in charge coupled devices. European Solid-State Circuits Conference, 1977-September, 97-100
Su J.; Steckl A. (01-01-1994). SiC devices for space electronics: Phase I-high voltage, temperature hard contacts. SAE Technical PapersMore Information
Han D.; Serra R.; Gorelick N.; Fatima U.; Eberhart C.G.; Brem H.; Tyler B.; Steckl A.J. (12-01-2019). Multi-layered core-sheath fiber membranes for controlled drug release in the local treatment of brai. Scientific Reports, 9 (1) More Information
Tort S.; Han D.; Steckl A.J. (04-15-2020). Self-inflating floating nanofiber membranes for controlled drug delivery. International Journal of Pharmaceutics, 579More Information
Dalirirad S.; Steckl A.J. (05-01-2020). Lateral flow assay using aptamer-based sensing for on-site detection of dopamine in urine. Analytical Biochemistry, 596More Information
Frantz E.; Li H.; Steckl A.J. (09-01-2020). Quantitative hematocrit measurement of whole blood in a point-of-care lateral flow device using a sm. Biosensors and Bioelectronics, 163More Information
Grote J.; Heckman E.; Hagen J.; Yaney P.; Steckl A.; Zetts J.; Hopkins F. (01-01-2005). DNA based photonic materials. Optics InfoBase Conference PapersMore Information
Peng H.Y.; Everitt H.O.; Munasinghe C.; Lee D.S.; Steckl A.J. (01-01-2005). Relaxation dynamics in rare earth-doped GaN. Optics InfoBase Conference PapersMore Information
Tort S.; Mutlu Agardan N.B.; Han D.; Steckl A.J. (10-02-2020). In vitro and in vivo evaluation of microneedles coated with electrosprayed micro/nanoparticles for m. Journal of Microencapsulation, 37 (7) , 517-527More Information
Han D.; Ray P.; Dalirirad S.; Steckl A. (08-01-2020). Novel point of care strategies for biomarker detection. 2020 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2020 - ProceedingsMore Information
Dalirirad S.; Han D.; Steckl A.J. (12-29-2020). Aptamer-Based Lateral Flow Biosensor for Rapid Detection of Salivary Cortisol. ACS Omega, 5 (51) , 32890-32898More Information
Tort S.; Han D.; Frantz E.; Steckl A.J. (03-15-2021). Controlled drug release of parylene-coated pramipexole nanofibers for transdermal applications. Surface and Coatings Technology, 409More Information
Campbell B.; Anderson Z.; Han D.; Nebor I.; Forbes J.; Steckl A.J. (03-01-2022). Electrospinning of cyanoacrylate tissue adhesives for human dural repair in endonasal surgery. Journal of Biomedical Materials Research - Part B Applied Biomaterials, 110 (3) , 660-667More Information
Riolo J.; Steckl A.J. (12-01-2022). Comparative analysis of genome code complexity and manufacturability with engineering benchmarks. Scientific Reports, 12 (1) More Information
Nyein E.E.; Hömmerich U.; Heikenfeld J.; Lee D.S.; Steckl A.J.; Zavada J.M. (01-01-2003). Characterization of the red light emission from Eu doped GaN. Optics InfoBase Conference Papers
Lee C.W.; Everitt H.O.; Javada J.M.; Steckl A.J. (01-01-2003). Temperature dependent visible photoluminescence of Eu-doped GaN on Silicon. Optics InfoBase Conference Papers
Nyein E.E.; Hömmerich V.; Heikenfeld J.; Lee D.S.; Steckl A.J.; Zavada J.M. (01-01-2002). Spectroscopic Evaluation of Rare Earth Doped GaN for Full-color Display Applications. Optics InfoBase Conference Papers
Frantz E.; Huang J.; Han D.; Steckl A.J. (12-01-2022). The effect of nutrient broth media on PEDOT:PSS gated OECTs for whole-cell bacteria detection. Biosensors and Bioelectronics: X, 12More Information
Han D.; Xie S.; Steckl A.J. (08-21-2023). Salivary endotoxin detection using combined mono/polyclonal antibody-based sandwich-type lateral flo. Sensors and Diagnostics, 2 (6) , 1460-1468More Information
Steckl A. (01-01-2023). Sensors for General Health Diagnostics Using Biomarkers in Bodily Fluids. Proceedings of IEEE SensorsMore Information
Huang J.; Han D.; Steckl A.J. (03-01-2024). Flow-Cell Sensor for Bacteria Detection Using Gate-Modified Organic Electrochemical Transistor. IEEE Sensors Journal, 24 (5) , 5797-5805More Information
Kissell L.N.; Han D.; Vang D.; Cikanek A.W.R.; Steckl A.J.; Strobbia P. (03-28-2024). Improved point-of-care detection of P. gingivalis using optimized surface-enhanced Raman scattering . Sensors and Diagnostics, 3 (5) , 839-849More Information