Andrew Steckl

Andrew Steckl

Professor

Distinguished University Research Professor; Gieringer Professor and Ohio Eminent Scholar

Rhodes Hall

839

CEAS - Elec Eng & Computer Science - 0030

Education

Ph.D: University of Rochester 1973

Research and Practice Interests

Electronic and photonic materials and devices, nano-materials, electrofluidics, biopolymers.

Research Support

Grant: #W911NF-06-1-0296 Investigators:Steckl, Andrew 08-01-2006 -01-31-2010 Department of the Army Injection Laser Using Rare Earth Doped GaN Thin Films for Visible and Infrared Applications Role:PI $424,916.00 Closed Level:Federal

Grant: #S000000941 & Chg.1 Investigators:Steckl, Andrew 08-15-2005 -08-14-2006 Department of the Air Force Fluorescence Studies of Electro-Optic Polymers Role:PI $1,000.00 Closed Level:Federal

Grant: #USAF-5408-04-SC-0007 Investigators:Steckl, Andrew 08-14-2006 -08-31-2009 Department of the Air Force Biopolymers for Organic Light Emitting Diodes Role:PI $119,000.00 Closed Level:Federal

Grant: #ECS-0439074 Investigators:Steckl, Andrew 11-15-2004 -10-31-2006 National Science Foundation Liquid Logic - The Third Wave in Electronics Role:PI $46,976.00 Closed Level:Federal

Grant: #DAAD19-02-2-0014/02 Investigators:Steckl, Andrew 06-30-2002 -06-29-2005 Department of the Army Rare-Earth-Doped GaN Electroluminescent Semiconductor Technology for All Solid-State Displays Operating under Extreme Conditions Role:PI $760,351.00 Closed Level:Federal

Grant: #DAAD19-3-1-0101/P5 Investigators:Steckl, Andrew 06-01-2003 -05-31-2006 Department of the Army Robust Visible and Infrared Light Emitting Devices Using Rare-Earth-Doped GaN Role:PI $360,000.00 Closed Level:Federal

Grant: ##650 Investigators:Steckl, Andrew 06-15-2003 -06-14-2004 Ohio Board of Regents Dopant Compostion Measurement Equipment for Improved Rare-Earth-Doped Electroluminescent Devices Role:PI $100,000.00 Closed Level:State of Ohio

Grant: #DAAD19-03-1-0154 Investigators:Steckl, Andrew 06-15-2003 -06-14-2004 Department of the Army Dopant Composition Measurement Equipment for Improved Rare-Earth-Doped Electroluminescent Devices Role:PI $275,000.00 Closed Level:Federal

Grant: #DAAD19-03-1-0019 Investigators:Steckl, Andrew 03-01-2003 -02-28-2004 Department of the Army Impurity Based Electroluminescence in Wide Bandgap Semiconductors Role:PI $18,000.00 Closed Level:Federal

Grant: #Program Income Investigators:Steckl, Andrew 03-01-2003 -02-28-2004 Program Income Conference Grant Program Income Role:PI $3,990.00 Closed Level:Other

Grant: #2948S1 Investigators:Steckl, Andrew 05-28-1999 -05-27-2000 Department of the Air Force Robust Micro Electro Mechanical Structures of Flow Control and Engine Sensors Role:PI $32,251.00 Closed Level:Federal

Grant: #2013 S1/CN 01 Investigators:Steckl, Andrew 05-01-2000 -09-01-2002 Department of the Air Force Robust Microelectromechanical Systems of Flow Control and Engine Sensors Role:PI $311,550.00 Closed Level:Federal

Grant: #CT580265A4 Investigators:Steckl, Andrew 01-10-2000 -01-09-2001 Edison Materials Technology Center Large Area Low Cost Semiconductors Role:PI $75,000.00 Closed Level:Private Non-Profit

Grant: #TECH 00-082 Investigators:Steckl, Andrew 06-01-2000 -02-28-2003 Ohio Department of Development Technology for Semiconductor Devices Operating under Extreme Conditions Role:PI $595,100.00 Closed Level:State of Ohio

Grant: #MDA904-00-C-2103/01 Investigators:Steckl, Andrew 09-17-2000 -09-17-2003 National Security Agency Unique Applications of Focused Ion Beam Technology: Ion Sources and Optoelectronic Device Fabrication Role:PI $800,716.00 Closed Level:Federal

Grant: #OBR #493/1 Investigators:Steckl, Andrew 09-18-2000 -09-17-2003 Ohio Board of Regents Unique Applications of Focused Ion Beam Technology: Ion Sources and Optoelectronic Device Fabrication Role:PI $90,000.00 Closed Level:State of Ohio

Grant: #DAAH049510347 Investigators:Steckl, Andrew 09-01-1995 -08-31-1999 Department of the Army Porous Si Laser Fabrication by FIB Implantation Role:PI $190,000.00 Closed Level:Federal

Grant: #DAAY049510626/P00004 Investigators:Steckl, Andrew 09-15-1995 -07-14-1999 Department of the Army Novel Luminescent Materials and Processes for Optoelectronic Devices Role:PI $386,000.00 Closed Level:Federal

Grant: #MDA9049710110/P00001 Investigators:Steckl, Andrew 09-05-1997 -03-04-2000 National Security Agency Focused Ion Beam Nano-Fabrication of Semiconductor Devices Role:PI $500,216.00 Closed Level:Federal

Grant: #Amend. 1 Investigators:Steckl, Andrew 09-05-1997 -03-04-2000 Ohio Board of Regents Focused Ion Beam Nano-Fabrication of Semiconductor Devices Role:PI $92,500.00 Closed Level:State of Ohio

Grant: #OSP97164 Investigators:Steckl, Andrew 07-15-1997 -07-14-1999 Rockwell Automation, Inc. Growth of GaN Wafers on SiC SOL Role:PI $25,000.00 Closed Level:Industry

Grant: #F336159812865/P00004 Investigators:Steckl, Andrew 09-24-1998 -12-23-2004 Department of the Air Force GaN Plasma-Based Etching Role:PI $256,350.00 Closed Level:Federal

Grant: #DAAG559810208/P00001 Investigators:Steckl, Andrew 06-01-1998 -05-31-2002 Department of the Army Optical Characterization of Light Emitting Materials Role:PI $186,334.00 Closed Level:Federal

Grant: #ECS-9813588 Investigators:Steckl, Andrew 06-15-1998 -11-30-1999 National Science Foundation Optical Memory Device Using Biphotonic Stimulation in Rare-Earth-Doped Material Role:PI $56,000.00 Closed Level:Federal

Grant: ##403 Investigators:Steckl, Andrew 06-10-1999 -06-09-2002 Ohio Board of Regents Focused Ion Beam Fabrication of Photonic Circuits for High Speed Memory Role:PI $170,000.00 Closed Level:State of Ohio

Grant: #MDA90499C2597/P00001 Investigators:Steckl, Andrew 06-10-1999 -06-09-2002 National Security Agency Focused Ion Beam Fabrication of Photonic Circuits for High Speed Memory Role:PI $1,007,388.00 Closed Level:Federal

Grant: #OSP99151 Investigators:Steckl, Andrew 01-01-1999 -12-31-2000 Dow Corning Corporation SiC and GaN Thin Film Growth Role:PI $322,723.00 Closed Level:Industry

Grant: #DAAD199910348/P00004 Investigators:Steckl, Andrew 10-01-1999 -06-30-2003 Department of the Army Rare Earth Doped GaN Visible and Infrared Light Emitters Role:PI $280,000.00 Closed Level:Federal

Grant: #ECS-9906984-NCE Investigators:Steckl, Andrew 09-15-1999 -02-28-2003 National Science Foundation Focused Ion Beam Fabrication of Optical Storage Structures using Biphotonic Stimulation in Rare Earth Doped Materials Role:PI $180,000.00 Closed Level:Federal

Grant: #W911NF-07-1-0220 Investigators:Steckl, Andrew 06-01-2007 -05-31-2008 Department of the Army Molecular Beam Epitaxy Equipment for Growth of Versatile Visible and Infrared Rare-Earth-Based GaN Lasers Role:PI $200,000.00 Closed Level:Federal

Grant: #FA8650-07-C-7717 Investigators:Steckl, Andrew 06-01-2007 -06-14-2009 Department of the Air Force Liquid Field Effect Transistors for Biocompatible Applications Role:PI $292,000.00 Closed Level:Federal

Grant: #ECCS-0725530 Investigators:Steckl, Andrew 08-01-2007 -07-31-2011 National Science Foundation Liquid Field Effect Transistors Role:PI $200,000.00 Closed Level:Federal

Grant: #RSC06054 / FA8650-04-2-4201 Investigators:Steckl, Andrew 08-15-2006 -06-30-2007 Department of the Air Force Optical Photoluminescence Correlation Role:PI $21,491.00 Closed Level:Federal

Grant: #U54 EB007954 Investigators:Air, Dorothy; Beyette, Fred; Bishop, Paul; Broderick, Joseph; Clark, Joseph; Haridas, Balakrishna; Helmicki, Arthur; Jauch, Edward; Kanter, Daniel; Pancioli, Arthur; Papautsky, Ian; Privitera, Mary Beth; Shutter, Lori; Steckl, Andrew; Todd, Anita; Tomsick, Thomas; Wilsey, Philip 09-30-2007 -06-30-2014 National Institute of Biomedical Imaging and Bioengineering Point of Care-Care Center for Emerging Neurotechnologies Role:Collaborator $9,416,342.00 Active Level:Federal

Grant: #UDRI RSC 07028-ODOD W944SR-06-C-0043 Investigators:Cuppoletti, John; Heikenfeld, Jason; Heineman, William; Steckl, Andrew 02-26-2007 -02-26-2014 Ohio Department of Development Institute for Development Commercialization of Advanced Sensor Role:Collaborator $1,000,000.00 Active Level:State of Ohio

Grant: #FA4869-07-1-4069 Investigators:Steckl, Andrew 06-15-2007 -07-14-2010 Department of the Air Force Electronic, Photonic and Magnetic Properties of Natural and Modified DNA Complexed with Heavy Metal Ions Role:PI $210,151.41 Closed Level:Federal

Grant: #Ipitek / W31P4Q-08-C-0232 Investigators:Steckl, Andrew 03-26-2008 -09-21-2008 Department of the Army Rare Earth Doped Organic Light Emitting Diodes for Infrared to Visible Upconversion Role:PI $29,000.00 Closed Level:Federal

Grant: #TECH-09-022 Investigators:Abdallah, Shaaban; Cohen, Kelly; Hamed, Awatef; Jeng, San-Mou; Jog, Milind; Khosla, Prem; Lee, Jay; Qian, Dong; Schulz, Mark; Shanov, Vesselin; Singh, Raj; Steckl, Andrew; Turner, Mark; Vasudevan, Vijay; Walker, Bruce 08-18-2008 -08-17-2013 Ohio Department of Development Intelligent Propulsion and Power Systems and Their Life Management Role:Collaborator $27,492,308.00 Active Level:State of Ohio

Grant: #SRS 006005 Investigators:Steckl, Andrew 01-01-2009 -12-31-2010 Raytheon Company Research on Materials for Electrowetting (Phase I) Role:PI $198,509.00 Active Level:Industry

Grant: #W911NF-09-1-0201 Investigators:Steckl, Andrew 05-01-2009 -04-30-2010 Air Force Office of Scientific Research Plasma Source for the Growth of Rare-Earth-Based GaN Laser Structures Role:PI $74,504.00 Active Level:Federal

Grant: #RX7-UC-09-3 Investigators:Steckl, Andrew 06-22-2009 -12-31-2011 Ohio Board of Regents Electrospinning of Biological Materials Role:PI $151,030.00 Active Level:State of Ohio

Grant: #FA9550-09-1-0497 Investigators:Steckl, Andrew 07-01-2009 -06-30-2010 Air Force Office of Scientific Research Circular Dichroism Spectrometer System for the Optical Characterization of DNA Thin Films Role:PI $116,000.00 Closed Level:Federal

Grant: #RX7-UC-09-3CG Investigators:Steckl, Andrew 10-01-2009 -03-31-2012 Multiple Sponsors Electrospinning of Fibers for Extreme Conditions Role:PI $80,000.00 Active Level:Other

Grant: #W911NF-10-1-0329 Investigators:Steckl, Andrew 08-09-2010 -12-31-2013 Department of the Army Rare Earth Doped GaN Laser Structures Using Metal Modulated Expitaxy Role:PI $335,505.00 Active Level:Federal

Grant: #W911QY-10-C-0185 Investigators:Steckl, Andrew 09-01-2010 -03-04-2013 Department of the Army Electrospinning of Enzyme Containing Fibers Role:PI $222,691.92 Active Level:Federal

Grant: #TECH 11-016 Investigators:Ahn, Chong; Heikenfeld, Jason; Iyer, Suri; Papautsky, Ian; Son, Sang Young; Steckl, Andrew 07-19-2010 -06-30-2014 Ohio Department of Development The Ohio Center for Microfluidic Innovation Role:Collaborator $2,956,675.00 Active Level:State of Ohio

Grant: #SRS 007441 Investigators:Steckl, Andrew 04-01-2011 -09-30-2011 Sappi Fine Paper North America Smart Packaging on Paper Role:PI $54,000.00 Closed Level:Industry

Grant: #RAI000625-May2011 Investigators:Steckl, Andrew 07-01-2011 -12-31-2013 RJ Reynolds Fluorine-Free Superhydrophobic Surfaces Role:PI $200,562.00 Active Level:Industry

Grant: #Steckl 2012-2013 Investigators:Steckl, Andrew 05-15-2012 -12-31-2013 Sappi Fine Paper North America Packaging on Paper Role:PI $122,236.00 Active Level:Industry

Grant: #ECCS-1236987 Investigators:Steckl, Andrew 07-15-2012 -12-31-2014 National Science Foundation EAGER: Photonics-on-Paper - A New Paradigm in Low Cost Device Role:PI $150,010.00 Active Level:Federal

Grant: #PO 4534712328 Investigators:Steckl, Andrew 03-01-2013 -10-31-2013 R. J. Reynolds Vapor Company PHASE I: Fiber Electrospinning Investigation for Improved Substrate Materials Role:PI $72,167.00 Active Level:Industry

Grant: #OPP1087022 Investigators:Pauletti, Giovanni; Steckl, Andrew 05-01-2013 -10-31-2014 Bill & Melinda Gates Foundation Paper Based Diagnostics for Tropical Disease Detection Role:PI $100,000.00 Active Level:Private Non-Profit

Grant: #PO US001-0000393878 / W911NF-11-D-0001 Investigators:Steckl, Andrew 09-10-2013 -08-31-2014 Department of the Army Research Laboratory Multi-Axial Electrospun Fiber Mats for Controlled Release of Functional Materials Role:PI $125,000.00 Awarded Level:Federal

Grant: #URC Interdisciplinary Awards Investigators:Hegener, Michael; Pauletti, Giovanni; Steckl, Andrew 04-01-2014 -03-31-2015 UC's University Research Council Clinical Assessment of a Novel Paper-based Microfluidics Device: Towards Patient-Controlled Monitoring of Blood Coagulation Role:Collaborator $25,000.00 Active Level:Internal UC

Grant: #NSF IIP-1500236 Investigators:Hegener, Michael; Pauletti, Giovanni; Steckl, Andrew 04-01-2015 -09-30-2016 National Science Foundation Developing an Engineering Prototype for Ultra-Low-Cost Blood Coagulation Diagnostics Using Paper-Based Microfluidics Role:PI $200,000.00 Awarded Level:Federal

Grant: #SSP TCN 15-026/W911NF-11-D-0001 Investigators:Steckl, Andrew 06-01-2015 -05-31-2016 Department of Defense Multi-axial Electrospun Fiber Mats for Controlled Release of Functional Materials Role:PI $150,000.00 Active Level:Federal

Grant: #S-104-000-001 / FA8650-15-C-6631 Investigators:Steckl, Andrew 10-09-2015 -01-08-2017 Air Force Research Laboratory Biomarker/Metric Identification and Sensor Development Role:PI $175,000.00 Awarded Level:Federal

Grant: #ESpin Fibers SRA Investigators:Steckl, Andrew 04-11-2016 -04-10-2017 Cambridge Display Technology, Ltd. Electrospinning of Multi-Layer Fibers for Controlled Release of Active Materials Role:PI $150,000.00 Active Level:Foreign Industry

Grant: #2018 Exhibit A_10805 Investigators:Steckl, Andrew 09-01-2018 -08-31-2019 Procter & Gamble Company Development of Aptamer Based Biosensors for Cortisol in Saliva Role:PI $55,000.00 Active Level:Industry

Grant: #2018 Exhibit A_PD 10806 Investigators:Steckl, Andrew 09-01-2018 -08-31-2019 Procter & Gamble Company Development of Aptamer Sensors for Endotoxin Detection Role:PI $55,000.00 Active Level:Industry

Grant: #R40314 Investigators:Steckl, Andrew 07-01-2019 -06-30-2020 UC's Faculty Bridge Program Electrospinning of Core-Sheath Fibers for Controlled Drug Release Role:PI $10,000.00 Active Level:Internal UC

Grant: #Exhibit A_Project Specification Investigators:Steckl, Andrew 09-01-2019 -08-31-2020 Procter & Gamble Company Organic Electrochemical Transistors as Bacterial Biosensors Role:PI $70,000.00 Awarded Level:Industry

Grant: #P&G Exhibit A Investigators:Steckl, Andrew 09-01-2019 -12-31-2019 Procter & Gamble Company Aptamer-based LFA detection of cortisol and endotoxin Role:PI $40,000.00 Awarded Level:Industry

Grant: #012467-002 Exhibit A Investigators:Steckl, Andrew 01-01-2020 -12-31-2020 Procter & Gamble Company Fluid Volume Sensor Using Fiber Membrane Pressure Transducer Role:PI $95,000.00 Awarded Level:Industry

Grant: #820-1-01 / R61HD099748 Investigators:Steckl, Andrew 09-13-2019 -08-31-2021 National Institutes of Health SMART Polymer Fibers For Tampon-Like Nonsteroidal Contraceptive Devices Role:PI $97,173.00 Awarded Level:Federal

Grant: #012998 Exhibit A Investigators:Steckl, Andrew 07-01-2020 -06-30-2021 Procter & Gamble Company Development of Aptamer Sensors for Endotoxin Detection Role:PI $58,500.00 Awarded Level:Industry

Grant: #R15CA252987 Investigators:Steckl, Andrew 09-01-2020 -08-31-2023 National Cancer Institute Controlled Release of Multiple Drugs from Electrospun Fiber Membranes in the Local Treatment of Glioblastoma Role:PI $481,543.00 Awarded Level:Federal

Publications

Peer Reviewed Publications

Bedford, Nicholas M; Winget, G Douglas; Punnamaraju, Srikoundinya; Steckl, Andrew J (2011. ) Immobilization of stable thylakoid vesicles in conductive nanofibers by electrospinning.Biomacromolecules, , 12 (3 ) ,778-84 More Information

Punnamaraju, Srikoundinya; Steckl, Andrew J (2011. ) Voltage control of droplet interface bilayer lipid membrane dimensions.Langmuir : the ACS journal of surfaces and colloids, , 27 (2 ) ,618-26 More Information

Kim, Duk Young; Steckl, Andrew J (2010. ) Electrowetting on paper for electronic paper display.ACS applied materials & interfaces, , 2 (11 ) ,3318-23 More Information

Wu, Dapeng; Han, Daewoo; Steckl, Andrew J (2010. ) Immunoassay on free-standing electrospun membranes.ACS applied materials & interfaces, , 2 (1 ) ,252-8 More Information

Han, Daewoo; Steckl, Andrew J (2009. ) Superhydrophobic and oleophobic fibers by coaxial electrospinning.Langmuir : the ACS journal of surfaces and colloids, , 25 (16 ) ,9454-62 More Information

Wu, Dapeng; Steckl, Andrew J (2009. ) High speed nanofluidic protein accumulator.Lab on a chip, , 9 (13 ) ,1890-6 More Information

Mahalingam, Venkataramanan; Sudarsan, Vasanthakumaran; Munusamy, Prabhakaran; van Veggel, Frank C J M; Wang, Rui; Steckl, Andrew J; Raudsepp, Mati (2008. ) Mg 2+-doped GaN nanoparticles as blue-light emitters: a method to avoid sintering at high temperatures.Small (Weinheim an der Bergstrasse, Germany), , 4 (1 ) ,105-10 More Information

Hagen, Joshua A; Li, Wei-Xin; Spaeth, Hans; Grote, James G; Steckl, Andrew J (2007. ) Molecular beam deposition of DNA nanometer films.Nano letters, , 7 (1 ) ,133-7 More Information

Lee D.;Heikenfeld J.;Birkhahn R.;Garter M.;Lee B.;Steckl A. (03-20-2000. ) Voltage-controlled yellow or orange emission from GaN codoped with Er and Eu.Applied Physics Letters, , 76 (12 ) ,1525-1527 More Information

Heikenfeld J.;Lee D.;Garter M.;Birkhahn R.;Steckl A. (03-13-2000. ) Low-voltage GaN:Er green electroluminescent devices.Applied Physics Letters, , 76 (11 ) ,1365-1367 More Information

Heikenfeld J.;Steckl A. (11-27-2000. ) Alternating current thin-film electroluminescence of GaN:Er.Applied Physics Letters, , 77 (22 ) ,3520-3522 More Information

Lee B.;Chi R.;Chao D.;Cheng J.;Chry I.;Beyette F.;Steckl A. (07-20-2001. ) High-density Er-implanted GaN optical memory devices.Applied Optics, , 40 (21 ) ,3552-3558 More Information

Steckl A.;Garter M.;Lee D.;Heikenfeld J.;Birkhahn R. (10-11-1999. ) Blue emission from Tm-doped GaN electroluminescent devices.Applied Physics Letters, , 75 (15 ) ,2184-2186 More Information

Citrin P.;Northrup P.;Birkhahn R.;Steckl A. (05-15-2000. ) Local structure and bonding of Er in GaN: A contrast with Er in Si.Applied Physics Letters, , 76 (20 ) ,2865-2867 More Information

Garter M.;Scofield J.;Birkhahn R.;Steckl A. (01-11-1999. ) Visible and infrared rare-earth-activated electroluminescence from indium tin oxide Schottky diodes .Applied Physics Letters, , 74 (2 ) ,182-184 More Information

Steckl A.;Birkhahn R. (12-01-1998. ) Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy.Applied Physics Letters, , 73 (12 ) ,1700-1702 More Information

Birkhahn R.;Steckl A. (12-01-1998. ) Green emission from Er-doped GaN grown by molecular beam epitaxy on Si substrates.Applied Physics Letters, , 73 (15 ) ,2143-2145 More Information

Chi C.;Steckl A. (01-08-2001. ) Digital thin-film color optical memory.Applied Physics Letters, , 78 (2 ) ,255-257 More Information

Lee B.K.;Steckl A.J.;Zavada J.M.;Wilson R.G. (01-01-1998. ) Effect of hydrogen/deuterium introduction on photoluminescence of 3C-SiC crystals .Materials Research Society Symposium - Proceedings, , 513 ,445-450

Saxena V.;Steckl A.J. (12-01-1998. ) High voltage 4H SiC rectifiers using Pt and Ni metallization .Materials Science Forum, , 264-268 (PART 2 ) ,937-940

Devrajan J.;Steckl A.J.;Tran C.A.;Stall R.A. (12-01-1998. ) Optical properties of GaN films grown on SiC/Si .Materials Science Forum, , 264-268 (PART 2 ) ,1149-1152

Naghski D.;Boyd J.;Jackson H.;Steckl A. (05-01-1998. ) Potential for size reduction of AlGaAs optical channel waveguide structures fabricated by focused io.Optics Communications, , 150 (1-6 ) ,97-100 More Information

Steckl A.;Garter M.;Birkhahn R.;Scofield J. (12-01-1998. ) Green electroluminescence from Er-doped GaN Schottky barrier diodes.Applied Physics Letters, , 73 (17 ) ,2450-2452 More Information

Birkhahn R.;Garter M.;Steckl A. (04-12-1999. ) Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates.Applied Physics Letters, , 74 (15 ) ,2161-2163 More Information

Chao L.;Lee B.;Chi C.;Cheng J.;Chyr I.;St?eckl A. (09-27-1999. ) Upconversion luminescence of Er-implanted GaN films by focused-ion-beam direct write.Applied Physics Letters, , 75 (13 ) ,1833-1835 More Information

Chao L.;Steckl A. (04-19-1999. ) Room-temperature visible and infrared photoluminescence from Pr-implanted GaN films by focused-ion-b.Applied Physics Letters, , 74 (16 ) ,2364-2366 More Information

Heikenfeld J.;Garter M.;Lee D.;Birkhahn R.;Steckl A. (08-30-1999. ) Red light emission by photoluminescence and electroluminescence from Eu-doped GaN.Applied Physics Letters, , 75 (9 ) ,1189-1191 More Information

Saxena V.;Nong J.;Steckl A. (12-01-1999. ) High-Voltage Ni- And Pt-SiC Schottky Diodes Utilizing Metal Field Plate Termination.IEEE Transactions on Electron Devices, , 46 (3 ) ,456-464 More Information

Madapura S.;Steckl A.;Loboda M. (03-01-1999. ) Heteroepitaxial growth of SiC on Si(100) and (111) by chemical vapor deposition using trimethylsilan.Journal of the Electrochemical Society, , 146 (3 ) ,1197-1202 More Information

Chao L.C.;Lee B.K.;Chi C.J.;Cheng J.;Chyr I.;Steckl A.J. (12-01-1999. ) Rare earth focused ion beam implantation utilizing Er and Pr liquid alloy ion sources .Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, , 17 (6 ) ,2791-2794

Birkhahn R.;Hudgins R.;Lee D.;Lee B.;Steckl A.;Saleh A.;Wilson R.;Zavada J. (12-01-1999. ) Optical and structural properties of Er3+-doped GaN grown by MBE .Materials Research Society Symposium - Proceedings, , 537 ,

Steckl A.J.;Zavada J.M. (09-01-1999. ) Photonic applications of rare-earth-doped materials .MRS Bulletin, , 24 (9 ) ,16-17

Steckl A.J.;Zavada J.M. (01-01-1999. ) Optoelectronic properties and applications of rare-earth-doped GaN.MRS Bulletin, , 24 (9 ) ,33-38 More Information

Chyr I.;Steckl A. (12-01-1999. ) Focused ion beam micromachining of GaN photonic devices .Materials Research Society Symposium - Proceedings, , 537 ,

Steckl A.;Garter M.;Birkhahn R. (12-01-1999. ) Visible and infrared electroluminescence from Er-doped GaN Schottky diodes .Annual Device Research Conference Digest, , 200-201

Seshadri B.;Tang J.;Chyr I.;Steckl A.;Beyette F. (01-01-2000. ) Novel photoreceiver array with near field resolution capability .LEOS Summer Topical Meeting, , 59-60

Tang J.;Lee B.;Chi R.;Steckl A.;Beyette F. (01-01-2000. ) Optoelectronic page-oriented database filter based on a single chip photonic VLSI design .LEOS Summer Topical Meeting, , 71-72

Hommerich U.;Seo J.;MacKenzie J.;Abernathy C.;Birkhahn R.;Steckl A.;Zavada J. (01-01-2000. ) Comparison of the optical properties of Er3+ doped gallium nitride prepared b .Materials Research Society Symposium - Proceedings, , 595 ,

Chen J.;Steckl A.;Loboda M. (01-01-2000. ) Growth and characterization of N-doped SiC films from trimethylsilane .Materials Science Forum, , 338 ,

Lorenz K.;Vianden R.;Birkhahn R.;Steckl A.;Da Silva M.;Scares J.;Alves E. (01-01-2000. ) RBS/Channeling study of Er doped GaN films grown by MBE on Si(111) substrates.Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, , 161 ,946-951 More Information

Chen J.;Steckl A.;Loboda M. (06-01-2000. ) In situ N2-doping of SiC films grown on Si(111) by chemical vapor deposition .Journal of the Electrochemical Society, , 147 (6 ) ,2324-2327 More Information

Tang J.;Seshadri B.;Naughton K.;Lee B.;Chi R.;Steckl A.;Beyette F. (09-01-2000. ) CMOS-based photoreceiver arrays for page-oriented optical storage access.IEEE Photonics Technology Letters, , 12 (9 ) ,1234-1236 More Information

Chao L.;Steckl A. (01-01-2000. ) CW blue-green light emission from GaN and SiC by sum-frequency generation and second harmonic genera.Journal of Electronic Materials, , 29 (9 ) ,1059-1062 More Information

Chen J.;Scofield J.;Steckl A. (10-01-2000. ) Formation of SiC SOI structures by direct growth on insulating layers.Journal of the Electrochemical Society, , 147 (10 ) ,3845-3849 More Information

Seshadri B.;Tang J.;Chyr I.;Steckl A.;Beyette F. (12-01-2000. ) Photoreceiver array with near-field resolution capability .Proceedings of SPIE - The International Society for Optical Engineering, , 4109 ,310-316

Tang J.;Konanki S.;Seshadri B.;Lee B.;Chi R.;Steckl A.;Beyette F. (12-01-2000. ) CMOS photodetectors/receivers for smart-pixel based photonic systems .Proceedings of SPIE - The International Society for Optical Engineering, , 4109 ,75-82

Beyette F.;Tang J.;Lee B.;Chi R.;Steckl A. (12-01-2000. ) Design and analysis of a smart optical storage read head for relational database applications .Proceedings of SPIE - The International Society for Optical Engineering, , 4109 ,317-327

Chi R.;Steckl A. (01-01-2001. ) Digital thin film non-volatile optical memory .Annual Device Research Conference Digest, , 137-138

Heikenfeld J.;Steckl A. (01-01-2001. ) Rare-earth doped gan electroluminescent devices for robust flat panel displays .Annual Device Research Conference Digest, , 177-178

Cheng J.;Steckl A. (11-01-2001. ) Mg-Ga liquid metal ion source for implantation doping of GaN.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, , 19 (6 ) ,2551-2554 More Information

Chyr I.;Steckl A. (11-01-2001. ) GaN focused ion beam micromachining with gas-assisted etching.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, , 19 (6 ) ,2547-2550 More Information

Heikenfeld J.;Steckl A. (12-01-2001. ) AC operation of GaN:Er thin film electroluminescent display devices .Materials Research Society Symposium - Proceedings, , 639 ,

Mitofsky A.;Papen G.;Bishop S.;Lee D.;Steckl A. (12-01-2001. ) Comparison of Er 3+ photoluminescence and photoluminescence excitation spectr .Materials Research Society Symposium - Proceedings, , 639 ,

Hömmerich U.;Seo J.;Abernathy C.;Steckl A.;Zavada J. (04-24-2001. ) Spectroscopic studies of the visible and infrared luminescence from Er doped GaN.Materials Science and Engineering B: Solid-State Materials for Advanced Technology, , 81 (1-3 ) ,116-120 More Information

Steckl A.;Heikenfeld J.;Lee D.;Garter M. (04-24-2001. ) Multiple color capability from rare earth-doped gallium nitride.Materials Science and Engineering B: Solid-State Materials for Advanced Technology, , 81 (1-3 ) ,97-101 More Information

Zavada J.;Gregorkiewicz T.;Steckl A. (04-24-2001. ) Rare earth doped semiconductors III.Materials Science and Engineering B: Solid-State Materials for Advanced Technology, , 81 (1-3 ) ,1-2 More Information

Lee D.;Steckl A. (09-24-2001. ) Room-temperature-grown rare-earth-doped GaN luminescent thin films.Applied Physics Letters, , 79 (13 ) ,1962-1964 More Information

Garter M.;Steckl A. (01-01-2002. ) Temperature behavior of visible and infrared electroluminescent devices fabricated on erbium-doped G.IEEE Transactions on Electron Devices, , 49 (1 ) ,48-54 More Information

Nyein E.;Hömmerich U.;Heikenfeld J.;Lee D.;Steckl A.;Zavada J. (01-01-2002. ) Spectroscopic evaluation of rare earth doped GaN for full-color display applications .Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, , 654

Heikenfeld J.;Steckl A. (04-01-2002. ) Electroluminescent devices using a high-temperature stable GaN-based phosphor and thick-film dielect.IEEE Transactions on Electron Devices, , 49 (4 ) ,557-563 More Information

Lee B.;Chi C.;Chyr I.;Lee D.;Beyette F.;Steckl A. (04-01-2002. ) In-situ Er-doped GaN optical storage devices using high-resolution focused ion beam milling.Optical Engineering, , 41 (4 ) ,742-743 More Information

Cheng L.;Pan M.;Scofield J.;Steckl A. (01-01-2002. ) Growth and doping of SiC-thin films on low-stress, amorphous Si3N4.Journal of Electronic Materials, , 31 (5 ) ,361-365 More Information

Steckl A.;Heikenfeld J.;Lee D.;Garter M.;Baker C.;Wang Y.;Jones R. (07-01-2002. ) Rare-earth-doped GaN: Growth, properties, and fabrication of electroluminescent devices.IEEE Journal on Selected Topics in Quantum Electronics, , 8 (4 ) ,749-766 More Information

Heikenfeld J.;Steckl A. (08-01-2002. ) Contrast-enhancement in black dielectric electroluminescent devices.IEEE Transactions on Electron Devices, , 49 (8 ) ,1348-1352 More Information

Heikenfeld J.;Steckl A. (09-01-2002. ) Rare-earth-doped GaN switchable color electroluminescent devices.IEEE Transactions on Electron Devices, , 49 (9 ) ,1545-1551 More Information

Baker C.;Heikenfeld J.;Steckl A. (11-01-2002. ) Photoluminescent and electroluminescent Zn2Si0.5Ge<.IEEE Journal on Selected Topics in Quantum Electronics, , 8 (6 ) ,1420-1426 More Information

Cheng J.;Steckl A. (11-01-2002. ) Focused ion beam fabricated microgratings for integrated optics applications.IEEE Journal on Selected Topics in Quantum Electronics, , 8 (6 ) ,1323-1330 More Information

Lee D.;Steckl A. (01-06-2003. ) Selective enhancement of blue electroluminescence from GaN:Tm.Applied Physics Letters, , 82 (1 ) ,55-57 More Information

Nyein E.;Hömmerich U.;Heikenfeld J.;Lee D.;Steckl A.;Zavada J. (03-17-2003. ) Spectral and time-resolved photoluminescence studies of Eu-doped GaN.Applied Physics Letters, , 82 (11 ) ,1655-1657 More Information

Wang Y.;Steckl A. (01-27-2003. ) Three-color integration on rare-earth-doped GaN electroluminescent thin films.Applied Physics Letters, , 82 (4 ) ,502-504 More Information

Chyr I.;Lee B.;Chao L.;Steckl A. (12-01-1999. ) Damage generation and removal in the Ga+ focused ion beam micromachining of G .Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, , 17 (6 ) ,3063-3067

Lee D.;Heikenfeld J.;Steckl A.;Hommerich U.;Seo J.;Braud A.;Zavada J. (08-06-2001. ) Optimum Er concentration for in situ doped GaN visible and infrared luminescence.Applied Physics Letters, , 79 (6 ) ,719-721 More Information

Pan M.;Steckl A. (07-07-2003. ) Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition.Applied Physics Letters, , 83 (1 ) ,9-11 More Information

Cheng L.;Steckl A.;Scofield J. (10-01-2003. ) SiC thin-film Fabry-Perot interferometer for fiber-optic temperature sensor.IEEE Transactions on Electron Devices, , 50 (10 ) ,2159-2164 More Information

Lee D.;Steckl A. (09-15-2003. ) Enhanced blue emission from Tm-doped AlxGa1-xN electro.Applied Physics Letters, , 83 (11 ) ,2094-2096 More Information

Pacheco F.;Sánchez A.;Molina S.;Araújo D.;Devrajan J.;Steckl A.;García R. (01-01-1999. ) Electron microscopy study of SiC obtained by the carbonization of Si(111).Thin Solid Films, , 343-344 (1-2 ) ,305-308 More Information

Chen J.;Steckl A.J.;Loboda M.J. (05-01-1998. ) Molecular beam epitaxy growth of SiC on Si(111) from silacyclobutane .Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, , 16 (3 ) ,1305-1308

Baker C.;Heikenfeld J.;Munasinghe C.;Steckl A.;Nyein E.;Hommerich U. (12-09-2003. ) 1.5 ?m Zn2Si0.5Ge0.5O.Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, , 2 ,1054-1055

Steckl A.;Heikenfeld J.;Munasinghe C.;Lee D.;Wang Y.;Jones W. (12-09-2003. ) Inorganic electroluminescent displays: The impact of new materials .Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, , 2 ,656-657

Pellé F.;Auzel F.;Zavada J.M.;Lee D.S.;Steckl A.J. (12-15-2003. ) New spectroscopic data of erbium ions in GaN thin films.Materials Science and Engineering B: Solid-State Materials for Advanced Technology, , 105 (1-3 ) ,126-131 More Information

Hömmerich U.;Nyein E.;Lee D.;Heikenfeld J.;Steckl A.;Zavada J. (12-15-2003. ) Photoluminescence studies of rare earth (Er, Eu, Tm) in situ doped GaN.Materials Science and Engineering B: Solid-State Materials for Advanced Technology, , 105 (1-3 ) ,91-96 More Information

Banerjee S.;Baker C.;Klotzkin D.;Steckl A.;Nyieh E.;Hommerich H. (12-09-2003. ) Gain characteristics of Er-doped ZSG waveguide optical amplifiers .Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, , 1 ,136-137

Nyein E.;Hömmerich U.;Steckl A.;Lee D.;Zavada J. (12-09-2003. ) Spectroscopic studies of GaN:Er, GaN:Eu, and GaN/AlGaN:Tm prepared by solid-source molecular beam ep .Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, , 2 ,876-877

Hömmerich U.;Nyein E.;Lee D.;Steckl A.;Zavada J. (12-01-2003. ) Photoluminescence properties of in situ Tm-doped AlxGa1-x.Applied Physics Letters, , 83 (22 ) ,4556-4558 More Information

Cheng L.;Steckl A.;Scofield J. (12-01-2003. ) Effect of trimethylsilane flow rate on the growth of SiC thin-films for fiber-optic temperature sens.Journal of Microelectromechanical Systems, , 12 (6 ) ,797-803 More Information

Park J.;Steckl A. (11-15-2004. ) Laser action in Eu-doped GaN thin-film cavity at room temperature.Applied Physics Letters, , 85 (20 ) ,4588-4590 More Information

Saxena V.;Steckl A.J. (12-01-1998. ) Fast and anisotropic reactive ion etching of 4H and 6H SiC in NF3 .Materials Science Forum, , 264-268 (PART 2 ) ,829-832

Seo J.;Hömmerich U.;Lee D.;Heikenfeld J.;Steckl A.;Zavada J. (07-17-2002. ) Thermal quenching of photoluminescence from Er-doped GaN thin films.Journal of Alloys and Compounds, , 341 (1-2 ) ,62-66 More Information

Munasinghe C.;Heikenfeld J.;Dorey R.;Whatmore R.;Bender J.;Wager J.;Steckl A. (02-01-2005. ) High brightness ZnS and GaN electroluminescent devices using PZT thick dielectric layers.IEEE Transactions on Electron Devices, , 52 (2 ) ,194-203 More Information

Steckl A.;Heikenfeld J. (12-01-2004. ) Emissive electrowetting devices for Hybrid I/O™ displays .Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, , 1 ,250-251

Baker C.;Heikenfeld J.;Yu Z.;Steckl A. (03-01-2004. ) Optical amplification and electroluminescence at 1.54 ?m in Er-doped zinc silicate germanate on sili.Applied Physics Letters, , 84 (9 ) ,1462-1464 More Information

Garter M.;Birkhahn R.;Steckl A.;Scofield J. (12-01-1999. ) Visible and infrared rare-earth activated electroluminescence from erbium doped GaN .Materials Research Society Symposium - Proceedings, , 537 ,

Banerjee S.;Baker C.;Steckl A.;Klotzkin D. (03-01-2005. ) Optical properties of Er in Er-doped Zn2Si0.5Ge.Journal of Lightwave Technology, , 23 (3 ) ,1342-1349 More Information

Peng H.;Lee C.;Everitt H.;Lee D.;Steckl A.;Zavada J. (01-31-2005. ) Effect of optical excitation energy on the red luminescence of Eu3+ in GaN.Applied Physics Letters, , 86 (5 ) ,1-3 More Information

Heikenfeld J.;Steckl A. (04-29-2004. ) Fabrication and performance characteristics of black-dielectric electroluminescent 160 × 80-pixel di.Journal of the Society for Information Display, , 12 (1 ) ,57-64 More Information

Heikenfeld J.;Steckl A. (01-01-2005. ) Intense switchable fluorescence in light wave coupled electrowetting devices.Applied Physics Letters, , 86 (1 ) , More Information

Heikenfeld J.;Steckl A. (07-04-2005. ) High-transmission electrowetting light valves.Applied Physics Letters, , 86 (15 ) ,1-3 More Information

Steckl A.J.;Chyr I. (12-01-1999. ) Focused ion beam micromilling of GaN and related substrate materials (sapphire, SiC, and Si) .Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, , 17 (2 ) ,362-365

Park J.;Steckl A. (09-01-2005. ) Demonstration of a visible laser on silicon using Eu-doped GaN thin films.Journal of Applied Physics, , 98 (5 ) , More Information

Wojtowicz T.;Ruterana P.;Lee D.;Steckl A. (11-07-2005. ) Transmission electron microscopy of GaN layers in-situ doped with Er during plasma assisted MBE.Physica Status Solidi C: Conferences, , 2 (7 ) ,2484-2487 More Information

Lee D.;Steckl A.;Rack P.;Fitz-Gerald J. (11-07-2005. ) Cathodoluminescence and its temperature dependence in Tm-doped Al xGa.Physica Status Solidi C: Conferences, , 2 (7 ) ,2765-2769 More Information

Nyein E.;Hömmerich U.;Lee D.;Steckl A.;Zavada J. (11-07-2005. ) Spectroscopic studies of the infrared emission from Tm doped Al xGa.Physica Status Solidi C: Conferences, , 2 (7 ) ,2796-2799 More Information

Steckl A.;Heikenfeld J.;Allen S. (09-01-2005. ) Light wave coupled flat panel displays and solid-state lighting using hybrid inorganic/organic mater.IEEE/OSA Journal of Display Technology, , 1 (1 ) ,157-166 More Information

Munasinghe C.;Steckl A. (02-21-2006. ) GaN:Eu electroluminescent devices grown by interrupted growth epitaxy.Thin Solid Films, , 496 (2 ) ,636-642 More Information

Vrielinck H.;Izeddin I.;Ivanov V.;Gregorkiewicz T.;Callens F.;Lee D.;Steckl A.;Khaidukov N. (12-01-2005. ) On 2.7 ?m emission from Er-doped large bandgap hosts .Materials Research Society Symposium Proceedings, , 866 ,85-90

Dierolf V.;Fleischman Z.;Sandmann C.;Wakahara A.;Fujiwara T.;Munasinghe C.;Steckl A. (12-01-2005. ) Combined excitation emission spectroscopy of europium ions in GaN and AlGaN films .Materials Research Society Symposium Proceedings, , 866 ,73-78

Munasinghe C.;Steckl A.;Nyein E.E.;Hömmerich U.;Peng H.;Everitt H.;Fleischman Z.;Dierolf V.;Zavada J. (12-01-2005. ) GaN:Eu interrupted growth epitaxy (IGE): Thin film growth and electroluminescent devices .Materials Research Society Symposium Proceedings, , 866 ,41-52

Nyein E.E.;Hömmerich U.;Munasinghe C.;Steckl A.J.;Zavada J.M. (12-01-2005. ) Excitation-wavelength dependent and time-resolved photoluminescence studies of europium doped GaN gr .Materials Research Society Symposium Proceedings, , 866 ,67-72

Dierolf V.;Fleischman Z.;Sandmann C.;Munasinghe C.;Steckl A. (12-01-2005. ) Site selective spectroscopy of Eu-doped GaN .2005 Conference on Lasers and Electro-Optics, CLEO, , 1 ,306-308

Lee C.;Everitt H.;Lee D.;Steckl A.;Zavada J. (06-15-2004. ) Temperature dependence of energy transfer mechanisms in Eu-doped GaN.Journal of Applied Physics, , 95 (12 ) ,7717-7724 More Information

Diggs D.;Hagen J.;Yu Z.;Heckman E.;Kenneth Hopkins F.;Grote J.;Steckl A. (12-01-2005. ) Molecular binding and enhanced photoluminescence of bromocresol purple in marine derived DNA.Proceedings of SPIE - The International Society for Optical Engineering, , 5934 ,1-8 More Information

Grote J.G.;Heckman E.M.;Diggs D.E.;Hagen J.A.;Yaney P.P.;Steckl A.J.;Clarson S.J.;He G.S.;Zheng Q.;Prasad P.N.;Zetts J.S.;Kenneth Hopkins F. (12-01-2005. ) DNA-based materials for electro-optic applications: Current status.Proceedings of SPIE - The International Society for Optical Engineering, , 5934 ,1-6 More Information

Heikenfeld J.;Steckl A. (11-01-2004. ) Liquid light .Information Display, , 20 (11 ) ,26-31

Heikenfeld J.;Steckl A. (12-01-2005. ) Electrowetting-based pixelation for light wave coupling displays.Digest of Technical Papers - SID International Symposium, , 36 (1 ) ,746-749 More Information

Heikenfeld J.;Steckl A.J. (12-01-2005. ) Electrowetting light valves with greater than 80'% transmission, unlimited view angle, and video res .Digest of Technical Papers - SID International Symposium, , 36 (2 ) ,1674-1677

Katchkanov V.;Mosselmans J.F.W.;O'Donnell K.P.;Nogales E.;Hernandez S.;Martin R.W.;Steckl A.;Lee D.S. (01-01-2006. ) Extended X-ray absorption fine structure studies of GaN epilayers doped with Er.Optical Materials, , 28 (6-7 ) ,785-789 More Information

Park J.;Steckl A. (01-01-2006. ) Visible lasing from GaN:Eu optical cavities on sapphire substrates.Optical Materials, , 28 (6-7 ) ,859-863 More Information

Nyein E.;Hömmerich U.;Zavada J.;Lee D.;Steckl A.;Nepal N.;Lin J.;Jiang H. (01-01-2004. ) Ultraviolet and blue emission properties of Tm doped AlGaN and AlN .OSA Trends in Optics and Photonics Series, , 96 A ,1281-1282

Park J.;Steckl A. (04-11-2006. ) Site specific Eu 3+ stimulated emission in GaN host.Applied Physics Letters, , 88 (1 ) , More Information

Hagen J.;Li W.;Steckl A.;Grote J. (05-15-2006. ) Enhanced emission efficiency in organic light-emitting diodes using deoxyribonucleic acid complex as.Applied Physics Letters, , 88 (17 ) , More Information

Yu Z.;Hagen J.;Grote J.;Steckl A. (05-23-2006. ) Red photoluminescence emission of laser dye doped DNA and PMMA.Proceedings of SPIE - The International Society for Optical Engineering, , 6117 , More Information

Hagen J.;Li W.;Grote J.;Steckl A. (05-23-2006. ) Red/Blue electroluminescence from Europium-doped organic light emitting diodes.Proceedings of SPIE - The International Society for Optical Engineering, , 6117 , More Information

Chen J.;Scofield J.;Steckl A. (12-01-2000. ) Formation of SiC SOI structures by direct growth on insulating layers .Journal of the Electrochemical Society, , 147 (10 ) ,3840-3844

Li W.;Jones R.;Allen S.;Heikenfeld J.;Steckl A. (06-01-2006. ) Maximizing Alq3 OLED internal and external efficiencies: Charge balanced devi.IEEE/OSA Journal of Display Technology, , 2 (2 ) ,143-151 More Information

Park J.;Steckl A.;Rajagopal P.;Roberts J.;Piner E. (01-01-2006. ) Growth temperature dependence of optical modal gain and loss in GaN:Eu active medium on Si.Optics Express, , 14 (12 ) ,5307-5312 More Information

Seo J.;Hömmerich U.;Steckl A.;Birkhahn B.;Zavada J. (09-01-2006. ) Green luminescence and excited state thermalization in Er-doped gallium nitride .Journal of the Korean Physical Society, , 49 (3 ) ,943-946

Steckl A. (12-01-2005. ) Light emission from rare earth lumophores in inorganic and organic hosts.Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, , 2005 ,652-653 More Information

Hommerich U.;Seo J.T.;MacKenzie J.D.;Abernathy C.R.;Birkhahnt R.;Steckl A.J.;Zavada J.M. (01-01-2000. ) Comparison of the optical properties of er3+ doped gallium nitride prepared b.Materials Research Society Symposium - Proceedings, , 595 ,W11651-W11656 More Information

Garter M.;Birkhahn R.;Steckl A.J.;Scofield J. (12-01-1999. ) Visible and infrared rare-earth activated electroluminescence from erbium doped GaN .MRS Internet Journal of Nitride Semiconductor Research, , 4 (SUPPL. 1 ) ,

Birkhahn R.H.;Hudgins R.;Lee D.S.;Lee B.K.;Steckl A.J.;Saleh A.;Wilson R.G.;Zavada J.M. (12-01-1999. ) Optical and structural properties of Er 3+doped GaN grown by MBE .MRS Internet Journal of Nitride Semiconductor Research, , 4 (SUPPL. 1 ) ,

Chyr I.;Steckl A.J. (12-01-1999. ) Focused ion beam micromachining of GaN photonic devices .MRS Internet Journal of Nitride Semiconductor Research, , 4 (SUPPL. 1 ) ,

Chen J.;Steckl A.J.;Loboda M.J. (12-01-1998. ) Heteroepitaxial growth of SiC on Si by gas source MBE with silacyclobutane .Materials Science Forum, , 264-268 (PART 1 ) ,239-242

Heikenfeld J.;Steckl A. (12-01-2003. ) Inorganic EL displays at the crossroads .Information Display, , 19 (12 ) ,20-25

Dierolf V.;Fleischman Z.;Sandmann C.;Munasinghe C.;Steckl A. (12-01-2005. ) Combined excitation emission spectroscopy of Eu-doped GaN.Conference on Lasers and Electro-Optics Europe - Technical Digest, , More Information

Saxena V.;Steckl A. (12-01-1998. ) Chapter 3 Building Blocks for SiC Devices: Ohmic Contacts, Schottky Contacts, and p-n Junctions.Semiconductors and Semimetals, , 52 (C ) ,77-160 More Information

Lee D.;Heikenfeld J.;Steckl A. (01-21-2002. ) Growth-temperature dependence of Er-doped GaN luminescent thin films.Applied Physics Letters, , 80 (3 ) ,344-346 More Information

Lee D.;Steckl A. (03-18-2002. ) Lateral color integration on rare-earth-doped GaN electroluminescent thin films.Applied Physics Letters, , 80 (11 ) ,1888-1890 More Information

Lee D.;Steckl A. (02-04-2002. ) Ga flux dependence of Er-doped GaN luminescent thin films.Applied Physics Letters, , 80 (5 ) ,728-730 More Information

Lee D.;Steckl A. (09-23-2002. ) Enhanced blue and green emission in rare-earth-doped GaN electroluminescent devices by optical photo.Applied Physics Letters, , 81 (13 ) ,2331-2333 More Information

Hömmerich U.;Seo J.T.;MacKenzie J.D.;Abernathy C.R.;Birkhahn R.;Steckl A.J.;Zavada J.M. (12-01-2000. ) Comparison of the optical properties of Er 3+ doped gallium nitride prepared .MRS Internet Journal of Nitride Semiconductor Research, , 5 (SUPPL. 1 ) ,

Dierolf V.;Fleischman Z.;Sandmann C.;Munasinghe C.;Steckl A. (01-01-2006. ) Site selective spectroscopy of Eu-doped GaN .Optics InfoBase Conference Papers, ,

Grote J.; Hagen J.; Heckman E.; Hopkins F.; Steckl A.; Yaney P.; Zetts J. (01-01-2005. ) DNA based photonic materials .Optics InfoBase Conference Papers, ,

Dierolf V.;Fleischman Z.;Sandmann C.;Munasinghe C.;Steckl A. (01-01-2005. ) Site selective spectroscopy of Eu-doped GaN .Optics InfoBase Conference Papers, ,

Everitt H.; Lee D.; Munasinghe C.; Peng H.; Steckl A. (01-01-2005. ) Relaxation dynamics in rare earth-doped GaN .Optics InfoBase Conference Papers, ,

Steckl A.;Lee D.;Heikenfeld J.;Munasinghe C.;Pan M.;Wang Y.;Yu Z.;Park J.;Baker C.;Jones R. (01-01-2003. ) Rare earth doped GaN electroluminescent devices.IEEE International Symposium on Compound Semiconductors, Proceedings, , 2003-January ,147-148 More Information

Lee D.S.;Steckl A.J.;Hömmerich U.;Nyein E.E.;Rack P.;Fitzgerald J.;Zavada J.M. (01-01-2003. ) Enhanced blue emission from tm-doped AlxGa1-xN electroluminescent thin films.2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings, , 5-6 More Information

Steckl A.;Allen S.;Heikenfeld J. (01-01-2003. ) Hybrid inorganic/organic luminescent devices.2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings, , 38-39 More Information

Munasinghe C.;Heikenfeld J.;Dorey R.;Whatmore R.;Bender J.;Wager J.;Steckl A. (01-01-2003. ) Improved luminance and efficiency of ZnS:Mn and GaN:Eu TDEL devices using PZT thick dielectric films.2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings, , 75-76 More Information

Citrin P.;Northrup P.;Birkhahn R.;Steckl A. (01-01-2000. ) Local structure and bonding of luminescent Er in GaN: A contrast with Er in Si.IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, , 2000-January ,15-22 More Information

Zavada J.;Gregorkiewicz T.;Steckl A. (04-24-2001. ) Preface: Rare earth doped semiconductors III.Materials Science and Engineering B: Solid-State Materials for Advanced Technology, , 81 (1-3 ) ,1-2 More Information

Sivaraman R.;Clarson S.J.;Lee B.K.;Steckl A.J.;Reinhardt B.A. (07-17-2000. ) Photoluminescence studies and read/write process of a strong two-photon absorbing chromophore.Applied Physics Letters, , 77 (3 ) ,328-330 More Information

Lee C.W.;Everitt H.O.;Javada J.M.;Steckl A.J. (01-01-2003. ) Temperature dependent visible photoluminescence of Eudoped GaN on silicon .OSA Trends in Optics and Photonics Series, , 88 ,999-1000

Nyein E.;Hömmerich U.;Heikenfeld J.;Lee D.;Steckl A.;Zavada J. (01-01-2003. ) Characterization of the red light emission from Eu doped GaN .OSA Trends in Optics and Photonics Series, , 88 ,1005-1006

Izeddin I.;Gregorkiewicz T.;Lee D.;Steckl A. (10-01-2004. ) Photoluminescence and excitation spectroscopy of the 1.5 ?m Er-related band in MBE-grown GaN layers.Superlattices and Microstructures, , 36 (4-6 ) ,701-705 More Information

Li J.;Steckl A.;Golecki I.;Reidinger F.;Wang L.;Ning X.;Pirouz P. (12-01-1993. ) Structural characterization of nanometer SiC films grown on Si.Applied Physics Letters, , 62 (24 ) ,3135-3137 More Information

Steckl A.;Xu J.;Mogul H.;Mogren S. (12-01-1993. ) Doping-induced selective area photoluminescence in porous silicon.Applied Physics Letters, , 62 (16 ) ,1982-1984 More Information

Steckl A.;Devrajan J.;Tran C.;Stall R. (01-01-1997. ) Growth and characterization of GaN thin films SiC SOI substrates.Journal of Electronic Materials, , 26 (3 ) ,217-223 More Information

Steckl A.;Yih P. (12-01-1992. ) Residue-free reactive ion etching of ?-SiC in CHF3/O 2.Applied Physics Letters, , 60 (16 ) ,1966-1968 More Information

Steckl A.;Devrajan J.;Tran C.;Stall R. (10-07-1996. ) SiC rapid thermal carbonization of the (111)Si semiconductor-on-insulator structure and subsequent m.Applied Physics Letters, , 69 (15 ) ,2264-2266 More Information

Steckl A.;Mogren S.;Roth M.;Li J. (12-01-1992. ) Atomic probe imaging of ?-SiC thin films grown on (100) Si.Applied Physics Letters, , 60 (12 ) ,1495-1497 More Information

Steckl A.;Mogul H.;Mogren S. (12-01-1992. ) Localized fabrication of Si nanostructures by focused ion beam implantation.Applied Physics Letters, , 60 (15 ) ,1833-1835 More Information

Yuan C.;Steckl A.;Loboda M. (12-01-1994. ) Effect of carbonization on the growth of 3C-SiC on Si (111) by silacyclobutane.Applied Physics Letters, , 64 (22 ) ,3000-3002 More Information

Steckl A.;Devrajan J.;Tlali S.;Jackson H.;Tran C.;Gorin S.;Ivanova L. (12-16-1996. ) Characterization of 3C-SiC crystals grown by thermal decomposition of methyltrichlorosilane.Applied Physics Letters, , 69 (25 ) ,3824-3826 More Information

Chen P.;Steckl A. (12-01-1995. ) Selective compositional mixing in GaAs/AlGaAs superlattice induced by low dose Si focused ion beam i.Journal of Applied Physics, , 77 (11 ) ,5616-5624 More Information

Steckl A.;Nelson R.;French B.;Schecter D. (01-01-2017. ) APPLICATION OF CHARGE-COUPLED DEVICES TO INFRARED DETECTION AND IMAGING. 256-269

Lin C.M.;Steckl A.J.;Chow T.P. (01-01-1988. ) Electrical Properties of Ga-Implanted Si p<sup>+</sup>-n Shallow Junctio.IEEE Electron Device Letters, , 9 (11 ) ,594-597 More Information

Pan W.;Steckl A. (01-01-1990. ) Reactive Ion Etching of SiC Thin Films by Mixtures of Fluorinated Gases and Oxygen.Journal of the Electrochemical Society, , 137 (1 ) ,212-220 More Information

Lin C.;Steckl A. (01-01-1990. ) Fabrication of sub-micrometer PMOSFETs with sub-100 nm p+-n shallow junctions.Solid State Electronics, , 33 (4 ) ,472-474 More Information

Steckl A.;Li J. (01-01-1992. ) Epitaxial growth of ?-SiC on Si by RTCVD with C<inf>3</inf>H<inf&.IEEE Transactions on Electron Devices, , 39 (1 ) ,64-74 More Information

Jackson H.E.;Choo A.G.;Weiss B.L.;Boyd J.T.;Steckl A.J.;Chen P.;Burnham R.D.;Smith S.C. (12-01-1992. ) Raman and photoluminescence characterization of AlGaAs multiple-quantum-well structures formed by fo .Proceedings of SPIE - The International Society for Optical Engineering, , 1678 ,154-158

Li J.;Yih P.;Steckl A. (01-01-1993. ) Thickness Determination of SiC-on-Si Thin Films by Anisotropic Reactive Ion Etching and Preferential.Journal of the Electrochemical Society, , 140 (1 ) ,178-182 More Information

Kumar M.;Gupta V.;DeBrabander G.;Chen P.;Boyd J.;Steckl A.;Choo A.;Jackson H.;Burnham R.;Smith S. (01-01-1993. ) Optical Channel Waveguides in AlGaAs Multiple-Quantum-Well Structures Formed by Focused Ion-Beam-Ind.IEEE Photonics Technology Letters, , 5 (4 ) ,435-438 More Information

Li J.;Steckl A. (01-01-1993. ) Accurate Determination of Defects in the Gate Oxide of Si Metal Oxide Semiconductor Devices by Propa.Journal of the Electrochemical Society, , 140 (6 ) ,L89-L92 More Information

Yih P.;Steckl A. (01-01-1993. ) Effects of Hydrogen Additive on Obtaining Residue-Free Reactive Ion Etching of (?-SiC in Fluorinated.Journal of the Electrochemical Society, , 140 (6 ) ,1813-1824 More Information

Mogul H.;Steckl A. (01-01-1993. ) Electrical Properties of Si p<sup>+</sup>-n Junctions for Sub-0.25 ?m CM.IEEE Transactions on Electron Devices, , 40 (10 ) ,1823-1829 More Information

Steckl A.J.;Su J.N.;Xu J.;Li J.P.;Yuan C.;Yih P.H.;Mogul H.C. (12-01-1993. ) Characterization of photoluminescence from anodically etched SiC/Si heterostructures .Materials Research Society Symposium Proceedings, , 298 ,361-366

Li J.;Steckl A. (12-01-1993. ) AFM study of nucleation and void formation in SiC carbonization of Si .Materials Research Society Symposium Proceedings, , 280 ,739-744

Steckl A.J.;Xu J.;Mogul H.C. (12-01-1993. ) Photoluminescence of chemically etched polycrystalline and amorphous Si thin films .Materials Research Society Symposium Proceedings, , 298 ,211-216

Steckl A.;Su J. (12-01-1993. ) High voltage, temperature-hard 3C-SiC schottky diodes using All-Ni metallization .Technical Digest - International Electron Devices Meeting, , 695-998

Tong Q.;Gosele U.;Yuan C.;Steckl A. (12-01-1993. ) Feasibility study of SiC on oxide by wafer bonding and layer transferring .IEEE International SOI Conference, , 60-61

Choo A.;Cao X.;Tlali S.;Jackson H.;Chen P.;Steckl A.;Boyd J. (01-01-1994. ) Raman and photoluminescence characterization of FIB patterned AlGaAs/GaAs multiple quantum wells .Materials Research Society Symposium Proceedings, , 324 ,193-198

Yan H.;Wang H.;Steckl A. (01-01-1994. ) Low energy ion beam assisted deposition of low resistivity aluminum using TMAA .Materials Research Society Symposium Proceedings, , 316 ,863-868

Chen P.;Steckl A. (01-01-1994. ) Vacancy injection enhanced Al-Ga inter-diffusion in Si FIB implanted superlattice .Materials Research Society Symposium Proceedings, , 325 ,37-42

Steckl A.;Su J.;Xu J.;Li J.;Yuan C.;Yih P.;Mogul H. (12-01-1994. ) Selective-area room temperature visible photoluminescence from SiC/Si heterostructures.Applied Physics Letters, , 64 (11 ) ,1419-1420 More Information

Steckl A.;Xu J.;Mogul H. (01-01-1994. ) Crystallinity and Photoluminescence in Stain-Etched Porous Si.Journal of the Electrochemical Society, , 141 (3 ) ,674-679 More Information

Yih P.;Li J.;Steckl A. (01-01-1994. ) SiC/Si Heterojunction Diodes Fabricated by Self-Selective and by Blanket Rapid Thermal Chemical Vapo.IEEE Transactions on Electron Devices, , 41 (3 ) ,281-287 More Information

Steckl A.;Yuan C.;Tong Q.;Gösele U.;Loboda M. (01-01-1994. ) SiC Silicon-On-Insulator Structures by Direct Carbonization Conversion and Postgrowth from Silacyclo.Journal of the Electrochemical Society, , 141 (6 ) ,L66-L68 More Information

Xu J.;Steckl A. (12-01-1994. ) Fabrication of visibly photoluminescent Si microstructures by focused ion beam implantation and wet .Applied Physics Letters, , 65 (16 ) ,2081-2083 More Information

Kumar M.;Goo Choo A.;Chen P.;De Brabander G.;Boyd J.;Jackson H.;Steckl A.;Burnham R.;Smith S. (01-01-1994. ) Characterization of optical channel waveguides formed by fib induced compositional mixing in algaas .Superlattices and Microstructures, , 15 (4 ) ,421-425 More Information

Xu J.;Steckl A. (01-01-1994. ) Visible Electroluminescence from Stain-Etched Porous Si Diodes.IEEE Electron Device Letters, , 15 (12 ) ,507-509 More Information

Yih P.;Steckl A. (01-01-1995. ) Residue-Free Reactive Ion Etching of Silicon Carbide in Fluorinated Plasmas.Journal of the Electrochemical Society, , 142 (1 ) ,312-319 More Information

Li J.;Steckl A. (01-01-1995. ) Nucleation and Void Formation Mechanisms in SiC Thin Film Growth on Si by Carbonization.Journal of the Electrochemical Society, , 142 (2 ) ,634-641 More Information

Steckl A.J.;Xu J. (01-01-1995. ) Si Oxyhydrides on Stain-Etched Porous Si Thin Films and Correlation with Crystallinity and Photolumi.Journal of the Electrochemical Society, , 142 (5 ) ,L69-L71 More Information

Xu J.;Steckl A.J. (05-01-1995. ) Stain-etched porous silicon visible light emitting diodes.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, , 13 (3 ) ,1221-1224 More Information

Steckl A.;Chen P.;Cao X.;Jackson H.;Kumar M.;Boyd J. (07-01-1995. ) GaAs quantum well distributed Bragg reflection laser with AlGaAs/GaAs superlattice gratings fabricat.Applied Physics Letters, , 67 (2 ) ,179-181 More Information

Yih P.;Steckl A. (01-01-1995. ) Residue-Free Reactive Ion Etching of 3C-SiC and 6H-SiC in Fluorinated Mixture Plasmas.Journal of the Electrochemical Society, , 142 (8 ) ,2853-2860 More Information

Wei L.;Vaudin M.;Hwang C.S.;White G.;Xu J.;Steckl A.J. (01-01-1995. ) Heat conduction in silicon thin films: Effect of microstructure.Journal of Materials Research, , 10 (8 ) ,1889-1896 More Information

Steckl A.;Chen P.;Jackson H.;Choo A.;Cao X.;Boyd J.;Kumar M. (11-01-1995. ) Review of focused ion beam implantation mixing for the fabrication of GaAs-based optoelectronic devi.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, , 13 (6 ) ,2570-2575 More Information

Steckl A. (01-01-1997. ) Exploring the frontiers of optoelectronics with FIB technology .Advanced Workshop on Frontiers in Electronics, Proceedings, WOFE, , 47-50

Chaudhuri J.;Cheng X.;Yuan C.;Steckl A. (01-05-1997. ) Highly perfect thin films of SiC: X-ray double crystal diffractometry and X-ray double crystal topog.Thin Solid Films, , 292 (1-2 ) ,1-6 More Information

Steckl A.;Li J. (12-01-1992. ) Uniform ?-SiC thin-film growth on Si by low pressure rapid thermal chemical vapor deposition.Applied Physics Letters, , 60 (17 ) ,2107-2109 More Information

Steckl A.;Li J. (08-28-1992. ) Rapid thermal chemical vapor deposition growth of nanometer-thin SiC on silicon.Thin Solid Films, , 216 (1 ) ,149-154 More Information

Yih P.H.;Saxena V.;Steckl A.J. (07-01-1997. ) A review of SiC reactive ion etching in fluorinated plasmas .Physica Status Solidi (B) Basic Research, , 202 (1 ) ,605-624

Steckl A.;Roth M.;Powell J.;Larkin D. (12-01-1993. ) Atomic probe microscopy of 3C SiC films grown on 6H SiC substrates.Applied Physics Letters, , 62 (20 ) ,2545-2547 More Information

Steckl A.;Devrajan J.;Choyke W.;Devaty R.;Yoganathan M.;Novak S. (01-01-1996. ) Effect of annealing temperature on 1.5 ?m photoluminescence from Er-implanted 6H-SiC.Journal of Electronic Materials, , 25 (5 ) ,869-873 More Information

Mogul H.;Steckl A.;Novak S. (12-01-1993. ) Shallow Si p+-n junctions fabricated by focused ion beam Ga + implantation through thin Ti and TiSi2.Journal of Applied Physics, , 74 (4 ) ,2318-2322 More Information

Mogul H.C.;Steckl A.J.;Webster G.;Pawlik M.;Novak S. (12-01-1992. ) Electrochemical capacitance-voltage depth profiling of nanometer-scale layers fabricated by Ga+ focu.Applied Physics Letters, , 61 (5 ) ,554-556 More Information

Hite J.;Thaler G.;Khanna R.;Abernathy C.;Pearton S.;Park J.;Steckl A.;Zavada J. (10-09-2006. ) Optical and magnetic properties of Eu-doped GaN.Applied Physics Letters, , 89 (13 ) , More Information

Kim D.;Steckl A. (02-05-2007. ) Liquid-state field-effect transistors using electrowetting.Applied Physics Letters, , 90 (4 ) , More Information

Hagen J.;Grote J.;Li W.;Steckl A.;Diggs D.;Zetts J.;Nelson R.;Hopkins F. (12-01-2006. ) Organic light emitting diode with a DNA biopolymer electron blocking layer.Proceedings of SPIE - The International Society for Optical Engineering, , 6333 , More Information

Li W.;Hagen J.;Jones R.;Heikenfeld J.;Steckl A. (03-01-2007. ) Color tunable organic light emitting diodes using Eu complex doping.Solid-State Electronics, , 51 (3 ) ,500-504 More Information

Mu H.;Li W.;Jones R.;Steckl A.;Klotzkin D. (09-01-2007. ) A comparative study of electrode effects on the electrical and luminescent characteristics of Alq<.Journal of Luminescence, , 126 (1 ) ,225-229 More Information

Yu Z.;Zhou Y.;Klotzkin D.;Grote J.;Steckl A. (04-30-2007. ) Stimulated emission of sulforhodamine 640 doped DNA distributed feedback (DFB) laser devices.Proceedings of SPIE - The International Society for Optical Engineering, , 6470 , More Information

Steckl A. (01-01-2007. ) DNA - A new material for photonics?.Nature Photonics, , 1 (1 ) ,3-5 More Information

Yu Z.;Li W.;Hagen J.;Zhou Y.;Klotzkin D.;Grote J.;Steckl A. (03-20-2007. ) Photoluminescence and lasing from deoxyribonucleic acid (DNA) thin films doped with sulforhodamine.Applied Optics, , 46 (9 ) ,1507-1513 More Information

Allen S.;Steckl A. (06-01-2007. ) ELiXIR - Solid-state luminaire with enhanced light extraction by internal reflection.IEEE/OSA Journal of Display Technology, , 3 (2 ) ,155-159 More Information

So F.;Steckl A. (06-01-2007. ) Journal of Display Technology: Guest Editorial.IEEE/OSA Journal of Display Technology, , 3 (2 ) ,90 More Information

Steckl A.;Park J.;Zavada J. (07-01-2007. ) Prospects for rare earth doped GaN lasers on Si.Materials Today, , 10 (7-8 ) ,20-27 More Information

Lin C.M.;Steckl A.J.;Chow T.P. (12-01-1988. ) Si p+-n shallow junction fabrication using on-axis Ga +.Applied Physics Letters, , 52 (24 ) ,2049-2051 More Information

Steckl A.;Hagen J.;Yu Z.;Jones R.;Li W.;Han D.;Kim D.;Spaeth H.;Grote J.;Hopkins F. (12-01-2006. ) Biopolymers in light emitting devices .SID Conference Record of the International Display Research Conference, , 25-27

Allen S.;Steckl A. (12-01-2006. ) Efficiency and stability of perylene-based dyes for emissive displays .SID Conference Record of the International Display Research Conference, , 59-62

Peng H.;Lee C.;Everitt H.;Munasinghe C.;Lee D.;Steckl A. (10-22-2007. ) Spectroscopic and energy transfer studies of Eu3+ centers in GaN.Journal of Applied Physics, , 102 (7 ) , More Information

Steckl A.;Chen P.;Cao X.;Jackson H.;Kumar M.;Boyd J. (12-01-1994. ) GaAs quantum well distributed Bragg reflection laser with AlGaAs/GaAs superlattice gratings fabricat .Applied Physics Letters, , 67 ,1786

Yuan C.;Steckl A.;Chaudhuri J.;Thokala R.;Loboda M. (12-01-1995. ) Reduced temperature growth of crystalline 3C-SiC films on 6H-SiC by chemical vapor deposition from s.Journal of Applied Physics, , 78 (2 ) ,1271-1273 More Information

Steckl A.;Xu J.;Mogul H. (12-01-1993. ) Photoluminescence from stain-etched polycrystalline Si thin films.Applied Physics Letters, , 62 (17 ) ,2111-2113 More Information

Steckl A.;Yuan C.;Li J.;Loboda M. (12-01-1993. ) Growth of crystalline 3C-SiC on Si at reduced temperatures by chemical vapor deposition from silacyc.Applied Physics Letters, , 63 (24 ) ,3347-3349 More Information

Nepal N.;Bedair S.;El-Masry N.;Lee D.;Steckl A.;Zavada J. (12-06-2007. ) Correlation between compositional fluctuation and magnetic properties of Tm-doped AlGaN alloys.Applied Physics Letters, , 91 (22 ) , More Information

Lin C.M.;Steckl A.J.;Chow T.P. (12-01-1989. ) Sub-100-nm p + -n shallow junctions fabricated by group III dual ion implanta.Applied Physics Letters, , 54 (18 ) ,1790-1792 More Information

Higuchi-Rusli R.;Corelli J.;Steckl A.;Jin H. (12-01-1988. ) Characteristics and surface analysis of ion beam deposition from binary boron platinum (Pt.Journal of Applied Physics, , 63 (3 ) ,878-886 More Information

Park J.;Steckl A. (01-01-2008. ) Effect of process conditions on gain and loss in GaN:Eu cavities on different substrates.Physica Status Solidi (A) Applications and Materials Science, , 205 (1 ) ,26-29 More Information

Hite J.;Thaler G.T.;Park J.H.;Steckl A.J.;Abernathy C.R.;Zavada J.M.;Pearton S. (12-01-2006. ) Magnetic and optical properties of Eu-doped GaN .Materials Research Society Symposium Proceedings, , 955 ,94-96

Allen S.;Steckl A. (04-21-2008. ) A nearly ideal phosphor-converted white light-emitting diode.Applied Physics Letters, , 92 (14 ) , More Information

Jones R.A.;Li W.;Hagen J.;Steckl A.J. (12-01-2006. ) Organic photovoltaic devices with nanometer scale thickness by molecular beam deposition .2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006, , 2 ,764-765

Steckl A.J.;Hagen J.A.;Yu Z.;Jones R.A.;Li W.;Han D.;Kim D.Y.;Spaeth H.;Grote J.G.;Hopkins F.K. (12-01-2006. ) Challenges and opportunities for biophotonic devices in the liquid state and the solid state .2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006, , 1 ,159-161

Bickle J.;Iyer S.;Mantei T.;Papautsky I.;Schulz M.;Shanov V.;Smith L.;Steckl A. (12-01-2006. ) Integration of nanoscale science and technology into undergraduate curricula .2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006, , 1 ,403-405

Fleischman Z.;Tafon P.;Dierolf V.;Munasinghe C.;Steckl A. (12-01-2007. ) Identification of defect-trap-related europium sites in gallium nitride.Physica Status Solidi (C) Current Topics in Solid State Physics, , 4 (3 ) ,834-837 More Information

Nepal N.;Zavada J.;Lee D.;Steckl A. (08-25-2008. ) Dynamics of ultraviolet emissions in Tm-doped AlN using above band gap excitation.Applied Physics Letters, , 93 (6 ) , More Information

Steckl A. (09-22-2008. ) NanoBioMaterials - From BioLEDs to tissue engineering.Biennial University/Government/Industry Microelectronics Symposium - Proceedings, , 41-43 More Information

Kim D.;Herman S.;Steckl A. (09-22-2008. ) I-V and gain characteristics of electrowetting-based liquid field effect transistor.Biennial University/Government/Industry Microelectronics Symposium - Proceedings, , 2-5 More Information

Bedford N.;Han D.;Steckl A. (09-22-2008. ) Electrospun biopolymer-based micro/nanofibers.Biennial University/Government/Industry Microelectronics Symposium - Proceedings, , 139-141 More Information

Steckl A.;Spaeth H.;Singh K.;Grote J.;Naik R. (11-21-2008. ) Chirality of sulforhodamine dye molecules incorporated in DNA thin films.Applied Physics Letters, , 93 (19 ) , More Information

Jones R.;Li W.;Spaeth H.;Steckl A. (12-11-2008. ) Direct write electron beam patterning of DNA complex thin films.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, , 26 (6 ) ,2567-2571 More Information

Wang R.;Steckl A.J. (12-18-2008. ) Effect of Si and Er co-doping on green electroluminescence from GaN:Er ELDs .Materials Research Society Symposium Proceedings, , 1068 ,83-88

Wang R.;Steckl A.;Brown E.;Hommerich U.;Zavada J. (03-09-2009. ) Effect of Si codoping on Eu3+ luminescence in GaN.Journal of Applied Physics, , 105 (4 ) , More Information

Bodiou L.;Braud A.;Doualan J.L.;Moncor? R.;Park J.H.;Munasinghe C.;Steckl A.J.;Lorenz K.;Alves E.;Daudin B. (03-09-2009. ) Optically active centers in Eu implanted, Eu in situ doped GaN, and Eu doped GaN quantum dots.Journal of Applied Physics, , 105 (4 ) , More Information

Nepal N.;Zavada J.;Lee D.;Steckl A.;Sedhain A.;Lin J.;Jiang H. (03-31-2009. ) Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys.Applied Physics Letters, , 94 (11 ) , More Information

Glinka Y.;Everitt H.;Lee D.;Steckl A. (03-03-2009. ) Effect of Tm3+ -induced defects on the photoexcitation energy relaxation in Tm-doped Alx Ga1-x N.Physical Review B - Condensed Matter and Materials Physics, , 79 (11 ) , More Information

Glinka Y.;Foreman J.;Everitt H.;Lee D.;Steckl A. (05-08-2009. ) Direct and indirect photoluminescence excitation and ultraviolet emission from Tm-doped Al.Journal of Applied Physics, , 105 (8 ) , More Information

Mahalingam V.;Bovero E.;Munusamy P.;Van Veggel F.C.J.M.;Wang R.;Steckl A.J. (06-19-2009. ) Optical and structural characterization of blue-emitting Mg2+- and Zn.Journal of Materials Chemistry, , 19 (23 ) ,3889-3894 More Information

Han D.;Steckl A. (08-18-2009. ) Superhydrophobic and oleophobic fibers by coaxial electrospinning.Langmuir, , 25 (16 ) ,9454-9462 More Information

You H.;Spaeth H.;Linhard V.;Steckl A. (10-06-2009. ) Role of surfactants in the interaction of dye molecules in natural DNA polymers.Langmuir, , 25 (19 ) ,11698-11702 More Information

Fleischman Z.;Munasinghe C.;Steckl A.;Wakahara A.;Zavada J.;Dierolf V. (11-01-2009. ) Excitation pathways and efficiency of Eu ions in GaN by site-selective spectroscopy.Applied Physics B: Lasers and Optics, , 97 (3 ) ,607-618 More Information

Wang R.;Steckl A. (02-15-2010. ) Effect of growth conditions on Eu3+ luminescence in GaN.Journal of Crystal Growth, , 312 (5 ) ,680-684 More Information

Wang R.;Steckl A.;Nepal N.;Zavada J. (02-05-2010. ) Electrical and magnetic properties of GaN codoped with Eu and Si.Journal of Applied Physics, , 107 (1 ) , More Information

You H.;Steckl A. (07-12-2010. ) Three-color electrowetting display device for electronic paper.Applied Physics Letters, , 97 (2 ) , More Information

Kim D.;Steckl A. (06-15-2010. ) Complementary electrowetting devices on plasma-treated fluoropolymer surfaces.Langmuir, , 26 (12 ) ,9474-9483 More Information

Li W.;Jones R.;Spaeth H.;Steckl A. (08-09-2010. ) Dose effects in electron beam irradiation of DNA-complex thin films.Applied Physics Letters, , 97 (6 ) , More Information

Han D.;Boyce S.T.;Steckl A.J. (12-01-2008. ) Versatile core-sheath biofibers using coaxial electrospinning .Materials Research Society Symposium Proceedings, , 1094 ,33-38

Steckl A.J.;Park J.H. (12-01-2006. ) Visible lasing on Si using rare earth doped GaN .IEEE International Conference on Group IV Photonics GFP, , 209-210

Zhong M.;Steckl A. (12-01-2010. ) Eu-doped GaN films grown by phase shift epitaxy.Applied Physics Express, , 3 (12 ) , More Information

Kim D.;Steckl A. (11-24-2010. ) Electrowetting on paper for electronic paper display.ACS Applied Materials and Interfaces, , 2 (11 ) ,3318-3323 More Information

Bedford N.;Steckl A. (08-25-2010. ) Photocatalytic self cleaning textile fibers by coaxial electrospinning.ACS Applied Materials and Interfaces, , 2 (8 ) ,2448-2455 More Information

Steckl A.;You H.;Kim D. (04-11-2011. ) Flexible electrowetting and electrowetting on flexible substrates.Proceedings of SPIE - The International Society for Optical Engineering, , 7956 , More Information

Steckl A.;Spaeth H.;You H.;Gomez E.;Grote J. (01-01-2011. ) DNA as an optical material.Optics and Photonics News, , 22 (7-8 ) ,34-39 More Information

Gomez E.;Spaeth H.;Steckl A.;Grote J. (10-11-2011. ) Fabrication of natural DNA-containing organic light emitting diodes.Proceedings of SPIE - The International Society for Optical Engineering, , 8103 , More Information

Han D.;Filocamo S.;Kirby R.;Steckl A. (12-28-2011. ) Deactivating chemical agents using enzyme-coated nanofibers formed by electrospinning.ACS Applied Materials and Interfaces, , 3 (12 ) ,4633-4639 More Information

Punnamaraju S.;You H.;Steckl A. (05-22-2012. ) Triggered release of molecules across droplet interface bilayer lipid membranes using photopolymeriz.Langmuir, , 28 (20 ) ,7657-7664 More Information

Bedford N.;Pelaez M.;Han C.;Dionysiou D.;Steckl A. (07-07-2012. ) Photocatalytic cellulosic electrospun fibers for the degradation of potent cyanobacteria toxin micro.Journal of Materials Chemistry, , 22 (25 ) ,12666-12674 More Information

You H.;Steckl A. (09-01-2012. ) Electrowetting on flexible substrates.Journal of Adhesion Science and Technology, , 26 (12-17 ) ,1931-1939 More Information

Bedford N.;Dickerson M.;Drummy L.;Koerner H.;Singh K.;Vasudev M.;Durstock M.;Naik R.;Steckl A. (09-01-2012. ) Nanofi ber-based bulk-heterojunction organic solar cells using coaxial electrospinning.Advanced Energy Materials, , 2 (9 ) ,1136-1144 More Information

Steckl A. (02-08-2013. ) Circuits on cellulose.IEEE Spectrum, , 50 (2 ) ,48-61 More Information

Steckl A.; Su J. (12-01-1994. ) SiC devices for space electronics: Phase I-high voltage, temperature hard contacts.SAE Technical Papers, , More Information

Fraiwan A.;Sundermier S.;Han D.;Steckl A.J.;Hassett D.J.;Choi S. (06-01-2013. ) Enhanced performance of micro-electro-mechanical-systems (MEMS) microbial fuel cells using electrosp.Fuel Cells, , 13 (3 ) ,336-341 More Information

You H.;Steckl A. (08-26-2013. ) Versatile electrowetting arrays for smart window applications-from small to large pixels on fixed an.Solar Energy Materials and Solar Cells, , 117 ,544-548 More Information

Han D.;Steckl A. (08-28-2013. ) Triaxial electrospun nanofiber membranes for controlled dual release of functional molecules.ACS Applied Materials and Interfaces, , 5 (16 ) ,8241-8245 More Information

You H.;Steckl A. (05-01-2013. ) Lightweight electrowetting display on ultra-thin glass substrate.Journal of the Society for Information Display, , 21 (5 ) ,192-197 More Information

Ouchen F.;Gomez E.;Joyce D.;Yaney P.;Kim S.;Williams A.;Steckl A.;Venkat N.;Grote J. (12-11-2013. ) Investigation of DNA nucleobases - Thin films for potential applications in electronics and photonic.Proceedings of SPIE - The International Society for Optical Engineering, , 8817 , More Information

Zhong M.;Roberts J.;Kong W.;Brown A.;Steckl A. (01-06-2014. ) P-type GaN grown by phase shift epitaxy.Applied Physics Letters, , 104 (1 ) , More Information

Zocco A.T.;You H.;Hagen J.A.;Steckl A.J. (03-07-2014. ) Pentacene organic thin-film transistors on flexible paper and glass substrates.Nanotechnology, , 25 (9 ) , More Information

Purandare S.;Gomez E.;Steckl A. (03-07-2014. ) High brightness phosphorescent organic light emitting diodes on transparent and flexible cellulose f.Nanotechnology, , 25 (9 ) , More Information

You H.;Steckl A. (10-01-2013. ) Electrowetting on non-fluorinated hydrophobic surfaces.Journal of the Society for Information Display, , 21 (10 ) ,411-416 More Information

Ouchen F.;Gomez E.;Joyce D.;Williams A.;Kim S.;Heckman E.;Johnson L.;Yaney P.;Venkat N.;Steckl A.;Kajzar F.;Rau I.;Pawlicka A.;Prasad P.;Grote J. (01-01-2014. ) Latest advances in biomaterials: From deoxyribonucleic acid to nucleobases.Proceedings of SPIE - The International Society for Optical Engineering, , 8983 , More Information

Blumenschein N.;Han D.;Caggioni M.;Steckl A. (06-11-2014. ) Magnetic particles as liquid carriers in the microfluidic lab-in-tube approach to detect phase chang.ACS Applied Materials and Interfaces, , 6 (11 ) ,8066-8072 More Information

Li H.;Han D.;Pauletti G.;Steckl A. (10-21-2014. ) Blood coagulation screening using a paper-based microfluidic lateral flow device.Lab on a Chip, , 14 (20 ) ,4035-4041 More Information

Chu S.;Steckl A. (01-01-1988. ) The Effect of Trench-Gate-Oxide Structure on EPROM Device Operation.IEEE Electron Device Letters, , 9 (6 ) ,284-286 More Information

Fraiwan A.;Adusumilli S.P.;Han D.;Steckl A.J.;Call D.F.;Westgate C.R.;Choi S. (01-01-2014. ) Microbial power-generating capabilitie on micro-/nano-structured anodes in micro-sized microbial fue.Fuel Cells, , 14 (6 ) ,801-809 More Information

Gomez E.;Steckl A. (03-18-2015. ) Improved performance of OLEDs on cellulose/epoxy substrate using adenine as a hole injection layer.ACS Photonics, , 2 (3 ) ,439-445 More Information

Gomez E.;Venkatraman V.;Grote J.;Steckl A. (11-24-2014. ) DNA bases thymine and adenine in bio-organic light emitting diodes.Scientific Reports, , 4 , More Information

Venkatraman V.;Steckl A. (12-05-2015. ) Integrated OLED as excitation light source in fluorescent lateral flow immunoassays.Biosensors and Bioelectronics, , 74 ,150-155 More Information

Ouchen F.;Gomez E.;Joyce D.;Williams A.;Kim S.;Heckman E.;Johnson L.;Yaney P.;Venkat N.;Steckl A.;Kajzar F.;Rau I.;Pawlicka A.;Prasad P.;Grote J. (01-01-2015. ) Bio-based materials for electronic applications .Nonlinear Optics Quantum Optics, , 46 (2-4 ) ,199-225

Li H.;Han D.;Pauletti G.;Steckl A. (01-01-2014. ) Point-of-care blood coagulation monitoring using lateral flow device .18th International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2014, , 1575-1577

Zhao D.;Wang T.;Han D.;Rusinek C.;Steckl A.;Heineman W. (09-15-2015. ) Electrospun Carbon Nanofiber Modified Electrodes for Stripping Voltammetry.Analytical Chemistry, , 87 (18 ) ,9315-9321 More Information

Blumenschein N.;Han D.;Steckl A. (09-04-2015. ) Phase diagram characterization using magnetic beads as liquid carriers.Journal of Visualized Experiments, , 2015 (103 ) , More Information

Gomez E.;Venkatraman V.;Grote J.;Steckl A. (01-01-2015. ) Organic Light-Emitting Diodes: Exploring the Potential of Nucleic Acid Bases in Organic Light Emitti.Advanced Materials, , 27 (46 ) ,7680 More Information

Gomez E.;Venkatraman V.;Grote J.;Steckl A. (01-01-2015. ) Exploring the Potential of Nucleic Acid Bases in Organic Light Emitting Diodes.Advanced Materials, , 27 (46 ) ,7552-7562 More Information

Han D.;Sherman S.;Filocamo S.;Steckl A. (04-15-2017. ) Long-term antimicrobial effect of nisin released from electrospun triaxial fiber membranes.Acta Biomaterialia, , 53 ,242-249 More Information

Han D.;Yu X.;Chai Q.;Ayres N.;Steckl A. (04-05-2017. ) Stimuli-Responsive Self-Immolative Polymer Nanofiber Membranes Formed by Coaxial Electrospinning.ACS Applied Materials and Interfaces, , 9 (13 ) ,11858-11865 More Information

Li H.;Han D.;Hegener M.;Pauletti G.;Steckl A. (03-01-2017. ) Flow reproducibility of whole blood and other bodily fluids in simplified no reaction lateral flow a.Biomicrofluidics, , 11 (2 ) , More Information

Han D.;Sasaki M.;Yoshino H.;Kofuji S.;Sasaki A.;Steckl A. (08-01-2017. ) In-vitro evaluation of MPA-loaded electrospun coaxial fiber membranes for local treatment of gliobla.Journal of Drug Delivery Science and Technology, , 40 ,45-50 More Information

Hegener M.;Li H.;Han D.;Steckl A.;Pauletti G. (09-01-2017. ) Point-of-care coagulation monitoring: first clinical experience using a paper-based lateral flow dia.Biomedical Microdevices, , 19 (3 ) , More Information

Venkatraman V.;Steckl A. (12-15-2017. ) Quantitative Detection in Lateral Flow Immunoassay Using Integrated Organic Optoelectronics.IEEE Sensors Journal, , 17 (24 ) ,8343-8349 More Information

Han D.;Steckl A. (12-13-2017. ) Selective pH-Responsive Core-Sheath Nanofiber Membranes for Chem/Bio/Med Applications: Targeted Deli.ACS Applied Materials and Interfaces, , 9 (49 ) ,42653-42660 More Information

Venkatraman V.;Liedert R.;Kozak K.;Steckl A. (12-01-2016. ) Integrated NFC power source for zero on-board power in fluorescent paper-based lateral flow immunoas.Flexible and Printed Electronics, , 1 (4 ) , More Information

Ray P.;Han D.;Steckl A. (12-01-2016. ) Urine-powered (galvanic) electric cell and sensor on paper substrate.Flexible and Printed Electronics, , 1 (4 ) , More Information

Li H.;Han D.;Pauletti G.;Steckl A. (01-01-2018. ) Engineering a simple lateral flow device for animal blood coagulation monitoring.Biomicrofluidics, , 12 (1 ) , More Information

Tirgar A.;Han D.;Steckl A. (06-06-2018. ) Absorption of Ethylene on Membranes Containing Potassium Permanganate Loaded into Alumina-Nanopartic.Journal of Agricultural and Food Chemistry, , 66 (22 ) ,5635-5643 More Information

Li H.;Han D.;Pauletti G.;Hegener M.;Steckl A. (06-28-2018. ) Correction: Correcting the effect of hematocrit in whole blood coagulation analysis on paper-based l.Analytical Methods, , 10 (24 ) ,2939 More Information

Li H.;Han D.;Pauletti G.;Hegener M.;Steckl A. (06-28-2018. ) Correcting the effect of hematocrit in whole blood coagulation analysis on paper-based lateral flow .Analytical Methods, , 10 (24 ) ,2869-2874 More Information

Steckl A.;Ray P. (10-26-2018. ) Stress Biomarkers in Biological Fluids and Their Point-of-Use Detection.ACS Sensors, , 3 (10 ) ,2025-2044 More Information

Li H.;Steckl A. (01-02-2019. ) Paper Microfluidics for Point-of-Care Blood-Based Analysis and Diagnostics.Analytical Chemistry, , 91 (1 ) ,352-371 More Information

Dalirirad S.;Steckl A. (03-15-2019. ) Aptamer-based lateral flow assay for point of care cortisol detection in sweat.Sensors and Actuators, B: Chemical, , 79-86 More Information

Li H.;Han D.;Pauletti G.;Hegener M.;Steckl A. (01-01-2018. ) Cellulose-based lateral flow device for low-cost point-of-care blood coagulation monitoring .International Conference on Nanotechnology for Renewable Materials 2018, , 1 ,255-264

Fraiwan A.;Adusumilli S.P.;Han D.;Steckl A.J.;Call D.F.;Westgate C.R.;Choi S. (01-01-2014. ) Micro-/nano-structured anodes for enhanced performance of micro-sized microbial fuel cells .Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop, , 203-206

Ray P.;Steckl A.J. (05-24-2019. ) Label-Free Optical Detection of Multiple Biomarkers in Sweat, Plasma, Urine, and Saliva.ACS Sensors, , 4 (5 ) ,1346-1357 More Information

Han D.;Steckl A.J. (01-01-2019. ) Coaxial Electrospinning Formation of Complex Polymer Fibers and their Applications.ChemPlusChem, , More Information

Chyan O.;Franh D.;Hubbard A.;Li J.;Steckl A. (01-01-1994. ) Measurement of complete Auger electron emission angular distributions from ?-SiC films on Si(100).Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, , 12 (2 ) ,457-464 More Information

McDonald J.F.;Steckl A.J.;Neugebauer C.A.;Carlson R.O. (01-01-1986. ) Multilevel interconnections for wafer scale integration.Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, , 4 (6 ) ,3127-3138 More Information

Das P.;Steckl A. (12-01-1970. ) Current oscillations in cadmium sulphide with optically polished parallel surfaces.Applied Physics Letters, , 16 (4 ) ,163-165 More Information

Arellano M.E.;Das P.K.;Steckl A. (01-01-1972. ) ACOUSTO-ELECTRIC CURRENT STEPS IN OPTICALLY POLISHED PARALLEL CADMIUM SULPHIDE. 168-170

Steckl A.;Das P. (01-01-1972. ) MODEL OF THE ACOUSTOELECTRIC OSCILLATOR: FIELD-INDUCED FREQUENCY MODULATION, HARMONIC AND OFF-AXIS G .158-164

Steckl A. (01-01-1976. ) Infrared charge coupled devices.Infrared Physics, , 16 (1-2 ) ,65-73 More Information

Steckl A. (01-01-1976. ) Infrared optical properties of sputtered In2-x Snx O&l.Infrared Physics, , 16 (1-2 ) ,145-147 More Information

Steckl A.;Nelson R.;French B.;Gudmundsen R.;Schechter D. (01-01-1975. ) Application of Charge-Coupled Devices to Infrared Detection and Imaging.Proceedings of the IEEE, , 63 (1 ) ,67-74 More Information

Steckl A. (01-01-1975. ) INJECTION EFFICIENCY IN HYBRID IRCCD'S. 85-91

Steckl A. (01-01-1975. ) LOW TEMPERATURE SILICON CCD OPERATION. 383-388

Elabd H.;Steckl A.;Vidinski W. (01-01-1980. ) Effect of substrate orientation on the properties of the Si/PbS heterojunction.Solar Cells, , 1 (2 ) ,199-208 More Information

Steckl A.J.;Tam K.Y.;Motamedi M.E. (01-01-1979. ) READ-OUT CHARACTERISTICS OF THE PbS-Si HJ DETECTOR. Advances in Chemistry Series, , 650-654

Chow T.;Steckl A.;Motamedi M.;Brown D. (01-01-1979. ) MoSi2-GATE MOSFET`s FOR VLSI. Advances in Chemistry Series, , 458-461

Sheu S.;Steckl A. (01-01-1979. ) FREQUENCY CHARACTERISTICS OF p-n PbS-Si HETEROJUNCTION IR DETECTORS. Infrared Physics, , 351-353

Elabd H.;Steckl A. (12-01-1980. ) Structural and compositional properties of the PbS-Si heterojunction.Journal of Applied Physics, , 51 (1 ) ,726-737 More Information

Steckl A.;Elabd H.;Tam K.;Motamedi M.;Sheu S. (01-01-1980. ) The Optical and Detector Properties of the PbS-Si Heterojunction.IEEE Transactions on Electron Devices, , 27 (1 ) ,126-133 More Information

Motamedi M.;Tam K.;Steckl A. (01-01-1980. ) Design and Evaluation of Ion-Implanted CMOS Structures.IEEE Transactions on Electron Devices, , 27 (3 ) ,578-583 More Information

Elabd H.;Steckl A. (05-01-1980. ) Auger analysis of the PbS-Si heterojunction.Journal of Electronic Materials, , 9 (3 ) ,525-549 More Information

Steckl A.;Mohammed G. (12-01-1980. ) The effect of ambient atmosphere in the annealing of indium tin oxide films.Journal of Applied Physics, , 51 (7 ) ,3890-3895 More Information

Steckl A.;Sheu S. (01-01-1980. ) The a.c. admittance of the p-n PbS?Si heterojunction.Solid-State Electronics, , 23 (7 ) ,715-720 More Information

Chow T.;Brown D.;Steckl A.;Garfinkel M. (12-01-1980. ) Silane silicidation of Mo thin films.Journal of Applied Physics, , 51 (11 ) ,5981-5985 More Information

Smith G.E.;Steckl A.J. (01-01-1980. ) TWO-DIMENSIONAL INTEGRATED CIRCUIT PROCESS MODELING PROGRAM - RECIPE. Technical Digest - International Electron Devices Meeting, , 227-230

Tiemann J.J.;Vogelsong T.L.;Steckl A.J. (01-01-1980. ) CHARGE DOMAIN ANALOG SAMPLED DATA FILTERS. EASCON Record: IEEE Electronics and Aerospace Systems Convention, , 140-145

Chow T.;Steckl A. (01-01-1980. ) PLANAR PLASMA ETCHING OF Mo AND MoSi2 USING NF3. Technical Digest - International Electron Devices Meeting, , 149-151

Zetterlund B.;Steckl A.J. (01-01-1980. ) LOW TEMPERATURE RECOMBINATION LIFETIME IN Si MOSFET's. Technical Digest - International Electron Devices Meeting, , 284-288

Tam K.;Steckl A. (01-01-1981. ) Integrated PbS-Si IR Detector Read-Out.IEEE Electron Device Letters, , EDL-2 (5 ) ,130-132 More Information

Chow T.;Steckl A.;Brown D. (12-01-1981. ) The effect of annealing on the properties of silicidized molybdenum thin films.Journal of Applied Physics, , 52 (10 ) ,6331-6336 More Information

Okazaki S.;Chow T.;Steckl A. (01-01-1981. ) Edge-Defined Patterning of Hyperfine Refractory Metal Silicide MOS Structures.IEEE Transactions on Electron Devices, , 28 (11 ) ,1364-1368 More Information

Steckl A.;McDonald J.;Gutmann R. (01-01-1981. ) VLSI DESIGN AUTOMATION AND INTERACTIVE MODELING FOR ELECTRON BEAM LITHOGRAPHY. Journal of macromolecular science. Chemistry, , 172-176

Vidinski W.;Steckl A.;Corelli J. (01-01-1982. ) Photoexcitation properties of infrared active defects induced by neutron irradiation in silicon.Journal of Nuclear Materials, , 108-109 (C ) ,693-699 More Information

Smith G.;Steckl A. (01-01-1982. ) RECIPE—A Two-Dimensional VLSI Process Modeling Program.IEEE Transactions on Electron Devices, , 29 (2 ) ,216-221 More Information

Chow T.;Steckl A. (01-01-1982. ) Refractory MoSi2 and MoSi2/Polysilicon Bulk CMOS Circuits.IEEE Electron Device Letters, , 3 (2 ) ,37-40 More Information

Tiemann J.J.;Vogelsong T.L.;Steckl A.J. (01-01-1982. ) Charge Domain Recursive Filters.IEEE Journal of Solid-State Circuits, , 17 (3 ) ,597-605 More Information

Chow T.P.;Steckl A.J. (12-01-1982. ) Plasma etching of sputtered Mo and MoSi2 thin films in NF 3.Journal of Applied Physics, , 53 (8 ) ,5531-5540 More Information

Rude C.;Chow T.;Steckl A. (12-01-1982. ) Characterization of NbSi2 thin films.Journal of Applied Physics, , 53 (8 ) ,5703-5709 More Information

Bencuya S.S.;Steckl A.J.;Vogelsong T.L.;Tiemann J.J. (01-01-1982. ) Dynamic Packet Splitting in Charge Domain Devices.IEEE Electron Device Letters, , 3 (9 ) ,268-270 More Information

Bencuya S.S.;STeckl A.J.;Vogelsong T.L. (12-01-1982. ) COEFFICIENT ACCURACY FOR CDD PACKET SPLITTING TECHNIQUES. Technical Digest - International Electron Devices Meeting, , 123-126

Vidinski W.;Corelli J.;Steckl A. (12-01-1982. ) CORRELATION OF STRESS-SYMMETRY EXPERIMENTS WITH PHOTOEXCITATION AND DECAY PROCESSES FOR INFRARED-ACT .Electrochemical Society Extended Abstracts, , 82-2 ,361-362

Chow T.;Steckl A. (12-01-1982. ) DEVELOPMENT OF REFRACTORY GATE METALLIZATION FOR VLSI. Electrochemical Society Extended Abstracts, , 82-2 ,353-354

Follett D.;Weiss K.;Moore J.;Steckl A.;Liu W. (12-01-1982. ) POLARITY REVERSAL OF PMMA BY TREATMENT WITH CHLOROSILANES. Electrochemical Society Extended Abstracts, , 82-2 ,321-322

Vogelsong T.L.;Tiemann J.J.;Steckl A.J. (12-01-1982. ) HIGH-Q BANDPASS FILTER DEMONSTRATING CHARGE DOMAIN TECHNOLOGY. Technical Digest - International Electron Devices Meeting, , 123-126

Chow T.P.;Hamzeh K.;Steckl A.J. (12-01-1983. ) Thermal oxidation of niobium silicide thin films.Journal of Applied Physics, , 54 (5 ) ,2716-2719 More Information

Vidinski W.;Steckl A.;Corelli J. (12-01-1983. ) Correlation of photoluminescence and symmetry studies with photoexcitation and decay processes of in.Journal of Applied Physics, , 54 (7 ) ,4097-4103 More Information

Chow D.;McDonald J.;King D.;Smith W.;Molnar K.;Steckl A. (01-01-1983. ) IMAGE PROCESSING APPROACH TO FAST, EFFICIENT PROXIMITY CORRECTION FOR ELECTRON BEAM LITHOGRAPHY.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, , 1 (4 ) ,1383-1390 More Information

Chow T.;Steckl A. (01-01-1983. ) Refractory Metal Silicides: Thin-Film Properties and Processing Technology.IEEE Transactions on Electron Devices, , 30 (11 ) ,1480-1497 More Information

Chow T.;Steckl A. (12-01-1983. ) REVIEW OF REFRACTORY GATES FOR MOS VLSI. Technical Digest - International Electron Devices Meeting, , 513-517

Chow T.;Steckl A. (12-01-1983. ) REVIEW OF PLASMA ETCHING OF REFRACTORY METAL SILICIDES. Proceedings - The Electrochemical Society, , 83-10 ,362-381

Chow D.;McDonald J.;King D.;Steckl A. (12-01-1983. ) COMPARISON BETWEEN HAAR AND WALSH TRANSFORM 'THINNING' OF THE PATTERN DATABASE FOR PROXIMITY EFFECT .65-74

Lu W.;Chow T.;Steckl A.;Katz W. (12-01-1983. ) THERMAL OXIDATION OF SPUTTERED SILICON CARBIDE THIN FILMS. Electrochemical Society Extended Abstracts, , 83-1 ,133

Chow T.;Steckl A. (12-01-1983. ) REVIEW OF PLASMA ETCHING OF REFRACTORY METAL SILICIDES. Electrochemical Society Extended Abstracts, , 83-1 ,328-329

Haslam M.;McDonald J.;King D.;Bourgeois M.;Chow D.;Steckl A. (01-01-1984. ) TWO-DIMENSIONAL HAAR THINNING FOR DATA BASE COMPACTION IN FOURIER PROXIMITY CORRECTION FOR ELECTRON .Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, , 3 (1 ) ,165-173 More Information

Hamadeh H.;Corelli J.;Steckl A.;Berry I. (01-01-1984. ) FOCUSED Ga** plus BEAM DIRECT IMPLANTATION FOR Si DEVICE FABRICATION.Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, , 3 (1 ) ,91-93 More Information

Vogelsong T.L.;Tiemann J.J.;Steckl A.J. (01-01-1985. ) Charge-Domain Integrated Circuits for Signal Processing.IEEE Journal of Solid-State Circuits, , 20 (2 ) ,562-570 More Information

Liu W.;Corelli J.;Steckl A.;Moore J.;Silverman J. (12-01-1984. ) Polymethyl methacrylate resist sensitivity enhancement in x-ray lithography by in situ polymerizatio.Applied Physics Letters, , 44 (10 ) ,973-975 More Information

Moore J.;Corelli J.;Steckl A.;Warden J.;Tarro R.;Liu W.;Randall J. (08-01-1984. ) RESIST SENSITIVITY ENHANCEMENT IN MICROLITHOGRAPHY BY IN-SITU POLYMERIZATION. American Chemical Society, Polymer Preprints, Division of Polymer Chemistry, , 25 (2 ) ,105-106

Lu W.;Steckl A. (01-01-1984. ) Thermal Oxidation of Sputtered Silicon Carbide Thin Films.Journal of the Electrochemical Society, , 131 (8 ) ,1907-1914 More Information

Bencuya S.;Steckl A. (01-01-1984. ) Charge-Packet Splitting In Charge-Domain Devices.IEEE Transactions on Electron Devices, , 31 (10 ) ,1494-1501 More Information

McDonald J.;Rogers E.;Rose K.;Steckl A. (01-01-1984. ) TRIALS OF WAFER-SCALE INTEGRATION.IEEE Spectrum, , 21 (10 ) ,32-39 More Information

Steckl A.;Moore J.;Corelli J.;Liu W. (12-01-1984. ) IMAGE ENHANCEMENT IN HIGH-RESLUTION LITHOGRAPHY THROUGH POLYMER GRAFTING TECHNIQUES. Digest of Technical Papers - Symposium on VLSI Technology, , 60-61

Lu W.;Steckl A.;Chow T. (01-01-1985. ) COMPLETELY CONSUMED CARBIDE (C**3) - A NEW PROCESS FOR DIELECTRIC ISOLATION. Electrochemical Society Extended Abstracts, , 85-1 ,327-329

Lu W.;Steckl A.;Chow T. (01-01-1985. ) COMPLETELY CONSUMED CARBIDE (C**3) - A NEW PROCESS FOR DIELECTRIC ISOLATION. Proceedings - The Electrochemical Society, , 85-5 ,244-252

Chow T.P.;Steckl A.J. (01-01-1985. ) CRITIQUE OF REFRACTORY GATE APPLICATIONS FOR MOS VLSI. VLSI Electronics, Microstructure Science, , 9 ,37-91

Tarro R.;Warden J.;Corelli J.;Moore J.;Steckl A.;Kumar S. (12-01-1985. ) ELECTRON SPIN RESONANCE STUDIES OF IRRADIATED POLYMETHYLMETHACRYLATE (PMMA). 537-544

King D.;Steckl A.;Morgenstern J.;McDonald J.;Bourgeois M.;Yemc D.;Elminyawi I. (01-01-1986. ) FLIP-AND-SHIFT SIGNAL ENHANCEMENT APPLICATION FOR A PREDICTIVE ELECTRON-BEAM PATTERN REGISTRATION MO.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, , 4 (1 ) ,273-279 More Information

Kim S.;Choi J.;Pulver D.;Moore J.;Corelli J.;Steckl A.;Randall J. (01-01-1986. ) OPTIMIZATION OF SOLVENT DEVELOPMENT IN RADIATION INDUCED GRAFT LITHOGRAPHY OF POLY(METHYLMETHACRYLAT.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, , 4 (1 ) ,403-408 More Information

Chu S.;Corelli J.;Steckl A.;Reuss R.;Clark W.;Rensch D.;Morris W. (01-01-1986. ) COMPARISON OF NPN TRANSISTORS FABRICATED WITH BROAD BEAM AND SPATIAL PROFILING USING FOCUSED BEAM IO.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, , 4 (1 ) ,375-379 More Information

Sugiura J.;Lu W.;Cadien K.;Steckl A. (01-01-1986. ) REACTIVE ION ETCHING OF SiC THIN FILMS USING FLUORINATED GASES.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, , 4 (1 ) ,349-354 More Information

Steckl A.;Murarka S.;Corelli J. (01-01-1986. ) IN-SITU PROCESSING OF SEMICONDUCTOR DEVICES AND CUSTOM INTEGRATED CIRCUITS. Proceedings of the Custom Integrated Circuits Conference, , 586-590

Lu W.J.;Steckl A.J. (01-01-1986. ) Electrical Characteristics of Si Devices Fabricated with Completely Consumed Carbide (C3) Dielectric.Journal of the Electrochemical Society, , 133 (6 ) ,1180-1185 More Information

Steckl A. (01-01-1986. ) Particle-Beam Fabrication and In Situ Processing of Integrated Circuits.Proceedings of the IEEE, , 74 (12 ) ,1753-1774 More Information

Steckl A.;Lin C.;Chu S.;Corelli J. (01-01-1986. ) Simulation of graded-base bipolar transistor characteristics fabricated with a focused ion beam.Microelectronic Engineering, , 5 (1-4 ) ,179-189 More Information

Steckl A.;Balakrishnan S.;Jin H.;Corelli J. (01-01-1986. ) Micromachining of polyimide films with focused ion beams.Microelectronic Engineering, , 5 (1-4 ) ,461-462 More Information

Corelli J.;Steckl A.;Pulver D.;Randall J. (01-01-1987. ) Ultralow dose effects in ion-beam induced grafting of polymethylmethacrylate (PMMA).Nuclear Inst. and Methods in Physics Research, B, , 19-20 (PART 2 ) ,1009-1012 More Information

Zetterlund B.;Steckl A. (01-01-1987. ) Low-Temperature Operation of Silicon Surface-Channel Charge-Coupled Devices.IEEE Transactions on Electron Devices, , 34 (1 ) ,39-51 More Information

Bencuya S.;Steckl A.;Burkey B. (01-01-1987. ) Impact of edge effects on charge-packet-splitting accuracy.Solid State Electronics, , 30 (3 ) ,299-305 More Information

Pan W.;Steckl A. (12-01-1987. ) ANISOTROPIC AND SELECTIVE REACTIVE ION ETCHING OF SiC IN CHF//3 AND OXYGEN PLASMA. Materials Research Society Symposia Proceedings, , 76 ,157-162

Chow T.P.;Steckl A.J. (12-01-1980. ) Plasma etching characteristics of sputtered MoSi2 films.Applied Physics Letters, , 37 (5 ) ,466-468 More Information

Steckl A.;Tam K.;Motamedi M. (12-01-1979. ) Direct injection readout of the p-n PbS-Si heterojunction detector.Applied Physics Letters, , 35 (7 ) ,537-539 More Information

Chow T.P.;Steckl A.J. (12-01-1980. ) Size effects in MoSi2-gate MOSFET's.Applied Physics Letters, , 36 (4 ) ,297-299 More Information

Zetterlund B.;Steckl A. (12-01-1981. ) Low temperature recombination lifetime in Si metal oxide semiconductor field effect transistors.Applied Physics Letters, , 39 (2 ) ,155-156 More Information

Higuchi-Rusli R.;Corelli J.;Steckl A.;Cadien K. (07-01-1987. ) Development of test bed system for high melting temperature alloy fabrication and mass spectroscopy .Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, , 5 (4 ) ,2073-2076 More Information

Steckl A. (01-01-1979. ) Call for Papers.Physics Today, , 32 (4 ) ,15 More Information

Hiouchi-Rusli R.;Corelli J.;Steckl A.;Jin H. (07-01-1987. ) Surface Analysis Of Palladium Boride Liquid Metal Ion Beam Deposition On Silicon Single-Crystal Soli.Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, , 5 (4 ) ,1362-1366 More Information

McDonald J.;Rajapakse R.;Lin H.;Selvaraj R.;Corelli J.;Jin H.;Balakrishnan S.;Steckl A. (06-30-1987. ) Optimized focused ion beam inspection and repair of wafer scale interconnections.Proceedings of SPIE - The International Society for Optical Engineering, , 773 ,206-215 More Information

Steckl A. (01-01-1977. ) Low temperature signal linearity and harmonic distortion in charge coupled devices .European Solid-State Circuits Conference, , 1977-September ,97-100