Andrew Steckl

Andrew Steckl

Professor

Rhodes Hall

839

CEAS - Elec Eng & Computer Science - 0030

Education

Ph.D, University of Rochester 1973

Research and Practice Interests

Electronic and photonic materials and devices, nano-materials, electrofluidics, biopolymers.

Research Support

Grant: #W911NF-06-1-0296 Investigators:Steckl, Andrew 08-01-2006 -01-31-2010 Department of the Army Injection Laser Using Rare Earth Doped GaN Thin Films for Visible and Infrared Applications Role:PI $424,916.00 Closed Level:Federal

Grant: #S000000941 & Chg.1 Investigators:Steckl, Andrew 08-15-2005 -08-14-2006 Department of the Air Force Fluorescence Studies of Electro-Optic Polymers Role:PI $1,000.00 Closed Level:Federal

Grant: #USAF-5408-04-SC-0007 Investigators:Steckl, Andrew 08-14-2006 -08-31-2009 Department of the Air Force Biopolymers for Organic Light Emitting Diodes Role:PI $119,000.00 Closed Level:Federal

Grant: #ECS-0439074 Investigators:Steckl, Andrew 11-15-2004 -10-31-2006 National Science Foundation Liquid Logic - The Third Wave in Electronics Role:PI $46,976.00 Closed Level:Federal

Grant: #DAAD19-02-2-0014/02 Investigators:Steckl, Andrew 06-30-2002 -06-29-2005 Department of the Army Rare-Earth-Doped GaN Electroluminescent Semiconductor Technology for All Solid-State Displays Operating under Extreme Conditions Role:PI $760,351.00 Closed Level:Federal

Grant: #DAAD19-3-1-0101/P5 Investigators:Steckl, Andrew 06-01-2003 -05-31-2006 Department of the Army Robust Visible and Infrared Light Emitting Devices Using Rare-Earth-Doped GaN Role:PI $360,000.00 Closed Level:Federal

Grant: ##650 Investigators:Steckl, Andrew 06-15-2003 -06-14-2004 Ohio Board of Regents Dopant Compostion Measurement Equipment for Improved Rare-Earth-Doped Electroluminescent Devices Role:PI $100,000.00 Closed Level:State of Ohio

Grant: #DAAD19-03-1-0154 Investigators:Steckl, Andrew 06-15-2003 -06-14-2004 Department of the Army Dopant Composition Measurement Equipment for Improved Rare-Earth-Doped Electroluminescent Devices Role:PI $275,000.00 Closed Level:Federal

Grant: #DAAD19-03-1-0019 Investigators:Steckl, Andrew 03-01-2003 -02-28-2004 Department of the Army Impurity Based Electroluminescence in Wide Bandgap Semiconductors Role:PI $18,000.00 Closed Level:Federal

Grant: #Program Income Investigators:Steckl, Andrew 03-01-2003 -02-28-2004 Program Income Conference Grant Program Income Role:PI $3,990.00 Closed Level:Other

Grant: #2948S1 Investigators:Steckl, Andrew 05-28-1999 -05-27-2000 Department of the Air Force Robust Micro Electro Mechanical Structures of Flow Control and Engine Sensors Role:PI $32,251.00 Closed Level:Federal

Grant: #2013 S1/CN 01 Investigators:Steckl, Andrew 05-01-2000 -09-01-2002 Department of the Air Force Robust Microelectromechanical Systems of Flow Control and Engine Sensors Role:PI $311,550.00 Closed Level:Federal

Grant: #CT580265A4 Investigators:Steckl, Andrew 01-10-2000 -01-09-2001 Edison Materials Technology Center Large Area Low Cost Semiconductors Role:PI $75,000.00 Closed Level:Private Non-Profit

Grant: #TECH 00-082 Investigators:Steckl, Andrew 06-01-2000 -02-28-2003 Ohio Department of Development Technology for Semiconductor Devices Operating under Extreme Conditions Role:PI $595,100.00 Closed Level:State of Ohio

Grant: #MDA904-00-C-2103/01 Investigators:Steckl, Andrew 09-17-2000 -09-17-2003 National Security Agency Unique Applications of Focused Ion Beam Technology: Ion Sources and Optoelectronic Device Fabrication Role:PI $800,716.00 Closed Level:Federal

Grant: #OBR #493/1 Investigators:Steckl, Andrew 09-18-2000 -09-17-2003 Ohio Board of Regents Unique Applications of Focused Ion Beam Technology: Ion Sources and Optoelectronic Device Fabrication Role:PI $90,000.00 Closed Level:State of Ohio

Grant: #DAAH049510347 Investigators:Steckl, Andrew 09-01-1995 -08-31-1999 Department of the Army Porous Si Laser Fabrication by FIB Implantation Role:PI $190,000.00 Closed Level:Federal

Grant: #DAAY049510626/P00004 Investigators:Steckl, Andrew 09-15-1995 -07-14-1999 Department of the Army Novel Luminescent Materials and Processes for Optoelectronic Devices Role:PI $386,000.00 Closed Level:Federal

Grant: #MDA9049710110/P00001 Investigators:Steckl, Andrew 09-05-1997 -03-04-2000 National Security Agency Focused Ion Beam Nano-Fabrication of Semiconductor Devices Role:PI $500,216.00 Closed Level:Federal

Grant: #Amend. 1 Investigators:Steckl, Andrew 09-05-1997 -03-04-2000 Ohio Board of Regents Focused Ion Beam Nano-Fabrication of Semiconductor Devices Role:PI $92,500.00 Closed Level:State of Ohio

Grant: #OSP97164 Investigators:Steckl, Andrew 07-15-1997 -07-14-1999 Rockwell Automation, Inc. Growth of GaN Wafers on SiC SOL Role:PI $25,000.00 Closed Level:Industry

Grant: #F336159812865/P00004 Investigators:Steckl, Andrew 09-24-1998 -12-23-2004 Department of the Air Force GaN Plasma-Based Etching Role:PI $256,350.00 Closed Level:Federal

Grant: #DAAG559810208/P00001 Investigators:Steckl, Andrew 06-01-1998 -05-31-2002 Department of the Army Optical Characterization of Light Emitting Materials Role:PI $186,334.00 Closed Level:Federal

Grant: #ECS-9813588 Investigators:Steckl, Andrew 06-15-1998 -11-30-1999 National Science Foundation Optical Memory Device Using Biphotonic Stimulation in Rare-Earth-Doped Material Role:PI $56,000.00 Closed Level:Federal

Grant: ##403 Investigators:Steckl, Andrew 06-10-1999 -06-09-2002 Ohio Board of Regents Focused Ion Beam Fabrication of Photonic Circuits for High Speed Memory Role:PI $170,000.00 Closed Level:State of Ohio

Grant: #MDA90499C2597/P00001 Investigators:Steckl, Andrew 06-10-1999 -06-09-2002 National Security Agency Focused Ion Beam Fabrication of Photonic Circuits for High Speed Memory Role:PI $1,007,388.00 Closed Level:Federal

Grant: #OSP99151 Investigators:Steckl, Andrew 01-01-1999 -12-31-2000 Dow Corning Corporation SiC and GaN Thin Film Growth Role:PI $322,723.00 Closed Level:Industry

Grant: #DAAD199910348/P00004 Investigators:Steckl, Andrew 10-01-1999 -06-30-2003 Department of the Army Rare Earth Doped GaN Visible and Infrared Light Emitters Role:PI $280,000.00 Closed Level:Federal

Grant: #ECS-9906984-NCE Investigators:Steckl, Andrew 09-15-1999 -02-28-2003 National Science Foundation Focused Ion Beam Fabrication of Optical Storage Structures using Biphotonic Stimulation in Rare Earth Doped Materials Role:PI $180,000.00 Closed Level:Federal

Grant: #W911NF-07-1-0220 Investigators:Steckl, Andrew 06-01-2007 -05-31-2008 Department of the Army Molecular Beam Epitaxy Equipment for Growth of Versatile Visible and Infrared Rare-Earth-Based GaN Lasers Role:PI $200,000.00 Closed Level:Federal

Grant: #FA8650-07-C-7717 Investigators:Steckl, Andrew 06-01-2007 -06-14-2009 Department of the Air Force Liquid Field Effect Transistors for Biocompatible Applications Role:PI $292,000.00 Closed Level:Federal

Grant: #ECCS-0725530 Investigators:Steckl, Andrew 08-01-2007 -07-31-2011 National Science Foundation Liquid Field Effect Transistors Role:PI $200,000.00 Closed Level:Federal

Grant: #RSC06054 / FA8650-04-2-4201 Investigators:Steckl, Andrew 08-15-2006 -06-30-2007 Department of the Air Force Optical Photoluminescence Correlation Role:PI $21,491.00 Closed Level:Federal

Grant: #U54 EB007954 Investigators:Air, Dorothy; Beyette, Fred; Bishop, Paul; Broderick, Joseph; Clark, Joseph; Haridas, Balakrishna; Helmicki, Arthur; Jauch, Edward; Kanter, Daniel; Pancioli, Arthur; Papautsky, Ian; Privitera, Mary Beth; Shutter, Lori; Steckl, Andrew; Todd, Anita; Tomsick, Thomas; Wilsey, Philip 09-30-2007 -06-30-2014 National Institute of Biomedical Imaging and Bioengineering Point of Care-Care Center for Emerging Neurotechnologies Role:Collaborator $9,416,342.00 Active Level:Federal

Grant: #UDRI RSC 07028-ODOD W944SR-06-C-0043 Investigators:Cuppoletti, John; Heikenfeld, Jason; Heineman, William; Steckl, Andrew 02-26-2007 -02-26-2014 Ohio Department of Development Institute for Development Commercialization of Advanced Sensor Role:Collaborator $1,000,000.00 Active Level:State of Ohio

Grant: #FA4869-07-1-4069 Investigators:Steckl, Andrew 06-15-2007 -07-14-2010 Department of the Air Force Electronic, Photonic and Magnetic Properties of Natural and Modified DNA Complexed with Heavy Metal Ions Role:PI $210,151.41 Closed Level:Federal

Grant: #Ipitek / W31P4Q-08-C-0232 Investigators:Steckl, Andrew 03-26-2008 -09-21-2008 Department of the Army Rare Earth Doped Organic Light Emitting Diodes for Infrared to Visible Upconversion Role:PI $29,000.00 Closed Level:Federal

Grant: #TECH-09-022 Investigators:Abdallah, Shaaban; Cohen, Kelly; Hamed, Awatef; Jeng, San-Mou; Jog, Milind; Khosla, Prem; Lee, Jay; Qian, Dong; Schulz, Mark; Shanov, Vesselin; Singh, Raj; Steckl, Andrew; Turner, Mark; Vasudevan, Vijay; Walker, Bruce 08-18-2008 -08-17-2013 Ohio Department of Development Intelligent Propulsion and Power Systems and Their Life Management Role:Collaborator $27,492,308.00 Active Level:State of Ohio

Grant: #SRS 006005 Investigators:Steckl, Andrew 01-01-2009 -12-31-2010 Raytheon Company Research on Materials for Electrowetting (Phase I) Role:PI $198,509.00 Active Level:Industry

Grant: #W911NF-09-1-0201 Investigators:Steckl, Andrew 05-01-2009 -04-30-2010 Air Force Office of Scientific Research Plasma Source for the Growth of Rare-Earth-Based GaN Laser Structures Role:PI $74,504.00 Active Level:Federal

Grant: #RX7-UC-09-3 Investigators:Steckl, Andrew 06-22-2009 -12-31-2011 Ohio Board of Regents Electrospinning of Biological Materials Role:PI $151,030.00 Active Level:State of Ohio

Grant: #FA9550-09-1-0497 Investigators:Steckl, Andrew 07-01-2009 -06-30-2010 Air Force Office of Scientific Research Circular Dichroism Spectrometer System for the Optical Characterization of DNA Thin Films Role:PI $116,000.00 Closed Level:Federal

Grant: #RX7-UC-09-3CG Investigators:Steckl, Andrew 10-01-2009 -03-31-2012 Multiple Sponsors Electrospinning of Fibers for Extreme Conditions Role:PI $80,000.00 Active Level:Other

Grant: #W911NF-10-1-0329 Investigators:Steckl, Andrew 08-09-2010 -12-31-2013 Department of the Army Rare Earth Doped GaN Laser Structures Using Metal Modulated Expitaxy Role:PI $335,505.00 Active Level:Federal

Grant: #W911QY-10-C-0185 Investigators:Steckl, Andrew 09-01-2010 -03-04-2013 Department of the Army Electrospinning of Enzyme Containing Fibers Role:PI $222,691.92 Active Level:Federal

Grant: #TECH 11-016 Investigators:Ahn, Chong; Heikenfeld, Jason; Iyer, Suri; Papautsky, Ian; Son, Sang Young; Steckl, Andrew 07-19-2010 -06-30-2014 Ohio Department of Development The Ohio Center for Microfluidic Innovation Role:Collaborator $2,956,675.00 Active Level:State of Ohio

Grant: #SRS 007441 Investigators:Steckl, Andrew 04-01-2011 -09-30-2011 Sappi Fine Paper North America Smart Packaging on Paper Role:PI $54,000.00 Closed Level:Industry

Grant: #RAI000625-May2011 Investigators:Steckl, Andrew 07-01-2011 -12-31-2013 RJ Reynolds Fluorine-Free Superhydrophobic Surfaces Role:PI $200,562.00 Active Level:Industry

Grant: #Steckl 2012-2013 Investigators:Steckl, Andrew 05-15-2012 -12-31-2013 Sappi Fine Paper North America Packaging on Paper Role:PI $122,236.00 Active Level:Industry

Grant: #ECCS-1236987 Investigators:Steckl, Andrew 07-15-2012 -12-31-2014 National Science Foundation EAGER: Photonics-on-Paper - A New Paradigm in Low Cost Device Role:PI $150,010.00 Active Level:Federal

Grant: #PO 4534712328 Investigators:Steckl, Andrew 03-01-2013 -10-31-2013 R. J. Reynolds Vapor Company PHASE I: Fiber Electrospinning Investigation for Improved Substrate Materials Role:PI $72,167.00 Active Level:Industry

Grant: #OPP1087022 Investigators:Pauletti, Giovanni; Steckl, Andrew 05-01-2013 -10-31-2014 Bill & Melinda Gates Foundation Paper Based Diagnostics for Tropical Disease Detection Role:PI $100,000.00 Active Level:Private Non-Profit

Grant: #PO US001-0000393878 / W911NF-11-D-0001 Investigators:Steckl, Andrew 09-10-2013 -08-31-2014 Department of the Army Research Laboratory Multi-Axial Electrospun Fiber Mats for Controlled Release of Functional Materials Role:PI $125,000.00 Awarded Level:Federal

Grant: #URC Interdisciplinary Awards Investigators:Hegener, Michael; Pauletti, Giovanni; Steckl, Andrew 04-01-2014 -03-31-2015 UC's University Research Council Clinical Assessment of a Novel Paper-based Microfluidics Device: Towards Patient-Controlled Monitoring of Blood Coagulation Role:Collaborator $25,000.00 Active Level:Internal UC

Grant: #NSF IIP-1500236 Investigators:Hegener, Michael; Pauletti, Giovanni; Steckl, Andrew 04-01-2015 -09-30-2016 National Science Foundation Developing an Engineering Prototype for Ultra-Low-Cost Blood Coagulation Diagnostics Using Paper-Based Microfluidics Role:PI $200,000.00 Awarded Level:Federal

Grant: #SSP TCN 15-026/W911NF-11-D-0001 Investigators:Steckl, Andrew 06-01-2015 -05-31-2016 Department of Defense Multi-axial Electrospun Fiber Mats for Controlled Release of Functional Materials Role:PI $150,000.00 Active Level:Federal

Grant: #S-104-000-001 / FA8650-15-C-6631 Investigators:Steckl, Andrew 10-09-2015 -01-08-2017 Air Force Research Laboratory Biomarker/Metric Identification and Sensor Development Role:PI $175,000.00 Awarded Level:Federal

Grant: #ESpin Fibers SRA Investigators:Steckl, Andrew 04-11-2016 -04-10-2017 Cambridge Display Technology, Ltd. Electrospinning of Multi-Layer Fibers for Controlled Release of Active Materials Role:PI $150,000.00 Active Level:Foreign Industry

Grant: #2018 Exhibit A_10805 Investigators:Steckl, Andrew 09-01-2018 -08-31-2019 Procter & Gamble Company Development of Aptamer Based Biosensors for Cortisol in Saliva Role:PI $55,000.00 Active Level:Industry

Grant: #2018 Exhibit A_PD 10806 Investigators:Steckl, Andrew 09-01-2018 -08-31-2019 Procter & Gamble Company Development of Aptamer Sensors for Endotoxin Detection Role:PI $55,000.00 Active Level:Industry

Grant: #R40314 Investigators:Steckl, Andrew 07-01-2019 -06-30-2020 UC's Faculty Bridge Program Electrospinning of Core-Sheath Fibers for Controlled Drug Release Role:PI $10,000.00 Active Level:Internal UC

Grant: #Exhibit A_Project Specification Investigators:Steckl, Andrew 09-01-2019 -08-31-2020 Procter & Gamble Company Organic Electrochemical Transistors as Bacterial Biosensors Role:PI $70,000.00 Awarded Level:Industry

Grant: #P&G Exhibit A Investigators:Steckl, Andrew 09-01-2019 -12-31-2019 Procter & Gamble Company Aptamer-based LFA detection of cortisol and endotoxin Role:PI $40,000.00 Awarded Level:Industry

Grant: #012467-002 Exhibit A Investigators:Steckl, Andrew 01-01-2020 -12-31-2020 Procter & Gamble Company Fluid Volume Sensor Using Fiber Membrane Pressure Transducer Role:PI $95,000.00 Awarded Level:Industry

Grant: #820-1-01 / R61HD099748 Investigators:Steckl, Andrew 09-13-2019 -08-31-2021 National Institutes of Health SMART Polymer Fibers For Tampon-Like Nonsteroidal Contraceptive Devices Role:PI $97,173.00 Awarded Level:Federal

Publications

Peer Reviewed Publications

Bedford, Nicholas M; Winget, G Douglas; Punnamaraju, Srikoundinya; Steckl, Andrew J (2011. )Immobilization of stable thylakoid vesicles in conductive nanofibers by electrospinning.Biomacromolecules, ,12 (3 ),778-84

Punnamaraju, Srikoundinya; Steckl, Andrew J (2011. )Voltage control of droplet interface bilayer lipid membrane dimensions.Langmuir : the ACS journal of surfaces and colloids, ,27 (2 ),618-26

Kim, Duk Young; Steckl, Andrew J (2010. )Electrowetting on paper for electronic paper display.ACS applied materials & interfaces, ,2 (11 ),3318-23

Wu, Dapeng; Han, Daewoo; Steckl, Andrew J (2010. )Immunoassay on free-standing electrospun membranes.ACS applied materials & interfaces, ,2 (1 ),252-8

Han, Daewoo; Steckl, Andrew J (2009. )Superhydrophobic and oleophobic fibers by coaxial electrospinning.Langmuir : the ACS journal of surfaces and colloids, ,25 (16 ),9454-62

Wu, Dapeng; Steckl, Andrew J (2009. )High speed nanofluidic protein accumulator.Lab on a chip, ,9 (13 ),1890-6

Mahalingam, Venkataramanan; Sudarsan, Vasanthakumaran; Munusamy, Prabhakaran; van Veggel, Frank C J M; Wang, Rui; Steckl, Andrew J; Raudsepp, Mati (2008. )Mg 2+-doped GaN nanoparticles as blue-light emitters: a method to avoid sintering at high temperatures.Small (Weinheim an der Bergstrasse, Germany), ,4 (1 ),105-10

Hagen, Joshua A; Li, Wei-Xin; Spaeth, Hans; Grote, James G; Steckl, Andrew J (2007. )Molecular beam deposition of DNA nanometer films.Nano letters, ,7 (1 ),133-7

Birkhahn R.; Garter M.; Heikenfeld J.; Lee B.; Lee D.; Steckl A. (03-20-2000. )Voltage-controlled yellow or orange emission from GaN codoped with Er and Eu.Applied Physics Letters, ,76 (12 ),1525-1527

Birkhahn R.; Garter M.; Heikenfeld J.; Lee D.; Steckl A. (03-13-2000. )Low-voltage GaN:Er green electroluminescent devices.Applied Physics Letters, ,76 (11 ),1365-1367

Heikenfeld J.; Steckl A. (11-27-2000. )Alternating current thin-film electroluminescence of GaN:Er.Applied Physics Letters, ,77 (22 ),3520-3522

Beyette F.; Chao D.; Cheng J.; Chi R.; Chry I.; Lee B.; Steckl A. (07-20-2001. )High-density Er-implanted GaN optical memory devices.Applied Optics, ,40 (21 ),3552-3558

Birkhahn R.; Garter M.; Heikenfeld J.; Lee D.; Steckl A. (10-11-1999. )Blue emission from Tm-doped GaN electroluminescent devices.Applied Physics Letters, ,75 (15 ),2184-2186

Birkhahn R.; Citrin P.; Northrup P.; Steckl A. (05-15-2000. )Local structure and bonding of Er in GaN: A contrast with Er in Si.Applied Physics Letters, ,76 (20 ),2865-2867

Birkhahn R.; Garter M.; Scofield J.; Steckl A. (01-11-1999. )Visible and infrared rare-earth-activated electroluminescence from indium tin oxide Schottky diodes .Applied Physics Letters, ,74 (2 ),182-184

Birkhahn R.; Steckl A. (12-01-1998. )Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy.Applied Physics Letters, ,73 (12 ),1700-1702

Birkhahn R.; Steckl A. (12-01-1998. )Green emission from Er-doped GaN grown by molecular beam epitaxy on Si substrates.Applied Physics Letters, ,73 (15 ),2143-2145

Chi C.; Steckl A. (01-08-2001. )Digital thin-film color optical memory.Applied Physics Letters, ,78 (2 ),255-257

Lee B.; Steckl A.; Wilson R.; Zavada J. (01-01-1998. )Effect of hydrogen/deuterium introduction on photoluminescence of 3C-SiC crystals .Materials Research Society Symposium - Proceedings, ,513 ,445-450

Saxena V.; Steckl A. (12-01-1998. )High voltage 4H SiC rectifiers using Pt and Ni metallization .Materials Science Forum, ,264-268 (PART 2 ),937-940

Devrajan J.; Stall R.; Steckl A.; Tran C. (12-01-1998. )Optical properties of GaN films grown on SiC/Si .Materials Science Forum, ,264-268 (PART 2 ),1149-1152

Boyd J.; Jackson H.; Naghski D.; Steckl A. (05-01-1998. )Potential for size reduction of AlGaAs optical channel waveguide structures fabricated by focused io.Optics Communications, ,150 (1-6 ),97-100

Birkhahn R.; Garter M.; Scofield J.; Steckl A. (12-01-1998. )Green electroluminescence from Er-doped GaN Schottky barrier diodes.Applied Physics Letters, ,73 (17 ),2450-2452

Birkhahn R.; Garter M.; Steckl A. (04-12-1999. )Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates.Applied Physics Letters, ,74 (15 ),2161-2163

Chao L.; Cheng J.; Chi C.; Chyr I.; Lee B.; St?eckl A. (09-27-1999. )Upconversion luminescence of Er-implanted GaN films by focused-ion-beam direct write.Applied Physics Letters, ,75 (13 ),1833-1835

Chao L.; Steckl A. (04-19-1999. )Room-temperature visible and infrared photoluminescence from Pr-implanted GaN films by focused-ion-b.Applied Physics Letters, ,74 (16 ),2364-2366

Birkhahn R.; Garter M.; Heikenfeld J.; Lee D.; Steckl A. (08-30-1999. )Red light emission by photoluminescence and electroluminescence from Eu-doped GaN.Applied Physics Letters, ,75 (9 ),1189-1191

Nong J.; Saxena V.; Steckl A. (12-01-1999. )High-Voltage Ni- And Pt-SiC Schottky Diodes Utilizing Metal Field Plate Termination.IEEE Transactions on Electron Devices, ,46 (3 ),456-464

Loboda M.; Madapura S.; Steckl A. (03-01-1999. )Heteroepitaxial growth of SiC on Si(100) and (111) by chemical vapor deposition using trimethylsilan.Journal of the Electrochemical Society, ,146 (3 ),1197-1202

Chao L.; Cheng J.; Chi C.; Chyr I.; Lee B.; Steckl A. (12-01-1999. )Rare earth focused ion beam implantation utilizing Er and Pr liquid alloy ion sources .Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, ,17 (6 ),2791-2794

Birkhahn R.; Hudgins R.; Lee B.; Lee D.; Saleh A.; Steckl A.; Wilson R.; Zavada J. (12-01-1999. )Optical and structural properties of Er3+-doped GaN grown by MBE .Materials Research Society Symposium - Proceedings, ,537 ,

Steckl A.; Zavada J. (09-01-1999. )Photonic applications of rare-earth-doped materials .MRS Bulletin, ,24 (9 ),16-17

Steckl A.; Zavada J. (01-01-1999. )Optoelectronic properties and applications of rare-earth-doped GaN.MRS Bulletin, ,24 (9 ),33-38

Chyr I.; Steckl A. (12-01-1999. )Focused ion beam micromachining of GaN photonic devices .Materials Research Society Symposium - Proceedings, ,537 ,

Birkhahn R.; Garter M.; Steckl A. (12-01-1999. )Visible and infrared electroluminescence from Er-doped GaN Schottky diodes .Annual Device Research Conference Digest, ,200-201

Beyette F.; Chyr I.; Seshadri B.; Steckl A.; Tang J. (01-01-2000. )Novel photoreceiver array with near field resolution capability .LEOS Summer Topical Meeting, ,59-60

Beyette F.; Chi R.; Lee B.; Steckl A.; Tang J. (01-01-2000. )Optoelectronic page-oriented database filter based on a single chip photonic VLSI design .LEOS Summer Topical Meeting, ,71-72

Abernathy C.; Birkhahn R.; Hommerich U.; MacKenzie J.; Seo J.; Steckl A.; Zavada J. (01-01-2000. )Comparison of the optical properties of Er3+ doped gallium nitride prepared b .Materials Research Society Symposium - Proceedings, ,595 ,

Chen J.; Loboda M.; Steckl A. (01-01-2000. )Growth and characterization of N-doped SiC films from trimethylsilane .Materials Science Forum, ,338 ,

Alves E.; Birkhahn R.; Da Silva M.; Lorenz K.; Scares J.; Steckl A.; Vianden R. (01-01-2000. )RBS/Channeling study of Er doped GaN films grown by MBE on Si(111) substrates.Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, ,161 ,946-951

Chen J.; Loboda M.; Steckl A. (06-01-2000. )In situ N2-doping of SiC films grown on Si(111) by chemical vapor deposition .Journal of the Electrochemical Society, ,147 (6 ),2324-2327

Beyette F.; Chi R.; Lee B.; Naughton K.; Seshadri B.; Steckl A.; Tang J. (09-01-2000. )CMOS-based photoreceiver arrays for page-oriented optical storage access.IEEE Photonics Technology Letters, ,12 (9 ),1234-1236

Chao L.; Steckl A. (01-01-2000. )CW blue-green light emission from GaN and SiC by sum-frequency generation and second harmonic genera.Journal of Electronic Materials, ,29 (9 ),1059-1062

Chen J.; Scofield J.; Steckl A. (10-01-2000. )Formation of SiC SOI structures by direct growth on insulating layers.Journal of the Electrochemical Society, ,147 (10 ),3845-3849

Beyette F.; Chyr I.; Seshadri B.; Steckl A.; Tang J. (12-01-2000. )Photoreceiver array with near-field resolution capability .Proceedings of SPIE - The International Society for Optical Engineering, ,4109 ,310-316

Beyette F.; Chi R.; Konanki S.; Lee B.; Seshadri B.; Steckl A.; Tang J. (12-01-2000. )CMOS photodetectors/receivers for smart-pixel based photonic systems .Proceedings of SPIE - The International Society for Optical Engineering, ,4109 ,75-82

Beyette F.; Chi R.; Lee B.; Steckl A.; Tang J. (12-01-2000. )Design and analysis of a smart optical storage read head for relational database applications .Proceedings of SPIE - The International Society for Optical Engineering, ,4109 ,317-327

Chi R.; Steckl A. (01-01-2001. )Digital thin film non-volatile optical memory .Annual Device Research Conference Digest, ,137-138

Heikenfeld J.; Steckl A. (01-01-2001. )Rare-earth doped gan electroluminescent devices for robust flat panel displays .Annual Device Research Conference Digest, ,177-178

Cheng J.; Steckl A. (11-01-2001. )Mg-Ga liquid metal ion source for implantation doping of GaN.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, ,19 (6 ),2551-2554

Chyr I.; Steckl A. (11-01-2001. )GaN focused ion beam micromachining with gas-assisted etching.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, ,19 (6 ),2547-2550

Heikenfeld J.; Steckl A. (12-01-2001. )AC operation of GaN:Er thin film electroluminescent display devices .Materials Research Society Symposium - Proceedings, ,639 ,

Bishop S.; Lee D.; Mitofsky A.; Papen G.; Steckl A. (12-01-2001. )Comparison of Er 3+ photoluminescence and photoluminescence excitation spectr .Materials Research Society Symposium - Proceedings, ,639 ,

Abernathy C.; Hömmerich U.; Seo J.; Steckl A.; Zavada J. (04-24-2001. )Spectroscopic studies of the visible and infrared luminescence from Er doped GaN.Materials Science and Engineering B: Solid-State Materials for Advanced Technology, ,81 (1-3 ),116-120

Garter M.; Heikenfeld J.; Lee D.; Steckl A. (04-24-2001. )Multiple color capability from rare earth-doped gallium nitride.Materials Science and Engineering B: Solid-State Materials for Advanced Technology, ,81 (1-3 ),97-101

Gregorkiewicz T.; Steckl A.; Zavada J. (04-24-2001. )Rare earth doped semiconductors III.Materials Science and Engineering B: Solid-State Materials for Advanced Technology, ,81 (1-3 ),1-2

Lee D.; Steckl A. (09-24-2001. )Room-temperature-grown rare-earth-doped GaN luminescent thin films.Applied Physics Letters, ,79 (13 ),1962-1964

Garter M.; Steckl A. (01-01-2002. )Temperature behavior of visible and infrared electroluminescent devices fabricated on erbium-doped G.IEEE Transactions on Electron Devices, ,49 (1 ),48-54

Heikenfeld J.; Hömmerich U.; Lee D.; Nyein E.; Steckl A.; Zavada J. (01-01-2002. )Spectroscopic evaluation of rare earth doped GaN for full-color display applications .Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, ,654

Heikenfeld J.; Steckl A. (04-01-2002. )Electroluminescent devices using a high-temperature stable GaN-based phosphor and thick-film dielect.IEEE Transactions on Electron Devices, ,49 (4 ),557-563

Beyette F.; Chi C.; Chyr I.; Lee B.; Lee D.; Steckl A. (04-01-2002. )In-situ Er-doped GaN optical storage devices using high-resolution focused ion beam milling.Optical Engineering, ,41 (4 ),742-743

Cheng L.; Pan M.; Scofield J.; Steckl A. (01-01-2002. )Growth and doping of SiC-thin films on low-stress, amorphous Si3N4.Journal of Electronic Materials, ,31 (5 ),361-365

Baker C.; Garter M.; Heikenfeld J.; Jones R.; Lee D.; Steckl A.; Wang Y. (07-01-2002. )Rare-earth-doped GaN: Growth, properties, and fabrication of electroluminescent devices.IEEE Journal on Selected Topics in Quantum Electronics, ,8 (4 ),749-766

Heikenfeld J.; Steckl A. (08-01-2002. )Contrast-enhancement in black dielectric electroluminescent devices.IEEE Transactions on Electron Devices, ,49 (8 ),1348-1352

Heikenfeld J.; Steckl A. (09-01-2002. )Rare-earth-doped GaN switchable color electroluminescent devices.IEEE Transactions on Electron Devices, ,49 (9 ),1545-1551

Baker C.; Heikenfeld J.; Steckl A. (11-01-2002. )Photoluminescent and electroluminescent Zn2Si0.5Ge<.IEEE Journal on Selected Topics in Quantum Electronics, ,8 (6 ),1420-1426

Cheng J.; Steckl A. (11-01-2002. )Focused ion beam fabricated microgratings for integrated optics applications.IEEE Journal on Selected Topics in Quantum Electronics, ,8 (6 ),1323-1330

Lee D.; Steckl A. (01-06-2003. )Selective enhancement of blue electroluminescence from GaN:Tm.Applied Physics Letters, ,82 (1 ),55-57

Heikenfeld J.; Hömmerich U.; Lee D.; Nyein E.; Steckl A.; Zavada J. (03-17-2003. )Spectral and time-resolved photoluminescence studies of Eu-doped GaN.Applied Physics Letters, ,82 (11 ),1655-1657

Steckl A.; Wang Y. (01-27-2003. )Three-color integration on rare-earth-doped GaN electroluminescent thin films.Applied Physics Letters, ,82 (4 ),502-504

Chao L.; Chyr I.; Lee B.; Steckl A. (12-01-1999. )Damage generation and removal in the Ga+ focused ion beam micromachining of G .Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, ,17 (6 ),3063-3067

Braud A.; Heikenfeld J.; Hommerich U.; Lee D.; Seo J.; Steckl A.; Zavada J. (08-06-2001. )Optimum Er concentration for in situ doped GaN visible and infrared luminescence.Applied Physics Letters, ,79 (6 ),719-721

Pan M.; Steckl A. (07-07-2003. )Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition.Applied Physics Letters, ,83 (1 ),9-11

Cheng L.; Scofield J.; Steckl A. (10-01-2003. )SiC thin-film Fabry-Perot interferometer for fiber-optic temperature sensor.IEEE Transactions on Electron Devices, ,50 (10 ),2159-2164

Lee D.; Steckl A. (09-15-2003. )Enhanced blue emission from Tm-doped AlxGa1-xN electro.Applied Physics Letters, ,83 (11 ),2094-2096

Araújo D.; Devrajan J.; García R.; Molina S.; Pacheco F.; Sánchez A.; Steckl A. (01-01-1999. )Electron microscopy study of SiC obtained by the carbonization of Si(111).Thin Solid Films, ,343-344 (1-2 ),305-308

Chen J.; Loboda M.; Steckl A. (05-01-1998. )Molecular beam epitaxy growth of SiC on Si(111) from silacyclobutane .Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, ,16 (3 ),1305-1308

Baker C.; Heikenfeld J.; Hommerich U.; Munasinghe C.; Nyein E.; Steckl A. (12-09-2003. )1.5 ?m Zn2Si0.5Ge0.5O.Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, ,2 ,1054-1055

Heikenfeld J.; Jones W.; Lee D.; Munasinghe C.; Steckl A.; Wang Y. (12-09-2003. )Inorganic electroluminescent displays: The impact of new materials .Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, ,2 ,656-657

Auzel F.; Lee D.; Pellé F.; Steckl A.; Zavada J. (12-15-2003. )New spectroscopic data of erbium ions in GaN thin films.Materials Science and Engineering B: Solid-State Materials for Advanced Technology, ,105 (1-3 ),126-131

Heikenfeld J.; Hömmerich U.; Lee D.; Nyein E.; Steckl A.; Zavada J. (12-15-2003. )Photoluminescence studies of rare earth (Er, Eu, Tm) in situ doped GaN.Materials Science and Engineering B: Solid-State Materials for Advanced Technology, ,105 (1-3 ),91-96

Baker C.; Banerjee S.; Hommerich H.; Klotzkin D.; Nyieh E.; Steckl A. (12-09-2003. )Gain characteristics of Er-doped ZSG waveguide optical amplifiers .Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, ,1 ,136-137

Hömmerich U.; Lee D.; Nyein E.; Steckl A.; Zavada J. (12-09-2003. )Spectroscopic studies of GaN:Er, GaN:Eu, and GaN/AlGaN:Tm prepared by solid-source molecular beam ep .Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, ,2 ,876-877

Hömmerich U.; Lee D.; Nyein E.; Steckl A.; Zavada J. (12-01-2003. )Photoluminescence properties of in situ Tm-doped AlxGa1-x.Applied Physics Letters, ,83 (22 ),4556-4558

Cheng L.; Scofield J.; Steckl A. (12-01-2003. )Effect of trimethylsilane flow rate on the growth of SiC thin-films for fiber-optic temperature sens.Journal of Microelectromechanical Systems, ,12 (6 ),797-803

Park J.; Steckl A. (11-15-2004. )Laser action in Eu-doped GaN thin-film cavity at room temperature.Applied Physics Letters, ,85 (20 ),4588-4590

Saxena V.; Steckl A. (12-01-1998. )Fast and anisotropic reactive ion etching of 4H and 6H SiC in NF3 .Materials Science Forum, ,264-268 (PART 2 ),829-832

Heikenfeld J.; Hömmerich U.; Lee D.; Seo J.; Steckl A.; Zavada J. (07-17-2002. )Thermal quenching of photoluminescence from Er-doped GaN thin films.Journal of Alloys and Compounds, ,341 (1-2 ),62-66

Bender J.; Dorey R.; Heikenfeld J.; Munasinghe C.; Steckl A.; Wager J.; Whatmore R. (02-01-2005. )High brightness ZnS and GaN electroluminescent devices using PZT thick dielectric layers.IEEE Transactions on Electron Devices, ,52 (2 ),194-203

Heikenfeld J.; Steckl A. (12-01-2004. )Emissive electrowetting devices for Hybrid I/O™ displays .Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, ,1 ,250-251

Baker C.; Heikenfeld J.; Steckl A.; Yu Z. (03-01-2004. )Optical amplification and electroluminescence at 1.54 ?m in Er-doped zinc silicate germanate on sili.Applied Physics Letters, ,84 (9 ),1462-1464

Birkhahn R.; Garter M.; Scofield J.; Steckl A. (12-01-1999. )Visible and infrared rare-earth activated electroluminescence from erbium doped GaN .Materials Research Society Symposium - Proceedings, ,537 ,

Baker C.; Banerjee S.; Klotzkin D.; Steckl A. (03-01-2005. )Optical properties of Er in Er-doped Zn2Si0.5Ge.Journal of Lightwave Technology, ,23 (3 ),1342-1349

Everitt H.; Lee C.; Lee D.; Peng H.; Steckl A.; Zavada J. (01-31-2005. )Effect of optical excitation energy on the red luminescence of Eu3+ in GaN.Applied Physics Letters, ,86 (5 ),1-3

Heikenfeld J.; Steckl A. (04-29-2004. )Fabrication and performance characteristics of black-dielectric electroluminescent 160 × 80-pixel di.Journal of the Society for Information Display, ,12 (1 ),57-64

Heikenfeld J.; Steckl A. (01-01-2005. )Intense switchable fluorescence in light wave coupled electrowetting devices.Applied Physics Letters, ,86 (1 ),

Heikenfeld J.; Steckl A. (07-04-2005. )High-transmission electrowetting light valves.Applied Physics Letters, ,86 (15 ),1-3

Chyr I.; Steckl A. (12-01-1999. )Focused ion beam micromilling of GaN and related substrate materials (sapphire, SiC, and Si) .Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, ,17 (2 ),362-365

Park J.; Steckl A. (09-01-2005. )Demonstration of a visible laser on silicon using Eu-doped GaN thin films.Journal of Applied Physics, ,98 (5 ),

Lee D.; Ruterana P.; Steckl A.; Wojtowicz T. (11-07-2005. )Transmission electron microscopy of GaN layers in-situ doped with Er during plasma assisted MBE.Physica Status Solidi C: Conferences, ,2 (7 ),2484-2487

Fitz-Gerald J.; Lee D.; Rack P.; Steckl A. (11-07-2005. )Cathodoluminescence and its temperature dependence in Tm-doped Al xGa.Physica Status Solidi C: Conferences, ,2 (7 ),2765-2769

Hömmerich U.; Lee D.; Nyein E.; Steckl A.; Zavada J. (11-07-2005. )Spectroscopic studies of the infrared emission from Tm doped Al xGa.Physica Status Solidi C: Conferences, ,2 (7 ),2796-2799

Allen S.; Heikenfeld J.; Steckl A. (09-01-2005. )Light wave coupled flat panel displays and solid-state lighting using hybrid inorganic/organic mater.IEEE/OSA Journal of Display Technology, ,1 (1 ),157-166

Munasinghe C.; Steckl A. (02-21-2006. )GaN:Eu electroluminescent devices grown by interrupted growth epitaxy.Thin Solid Films, ,496 (2 ),636-642

Callens F.; Gregorkiewicz T.; Ivanov V.; Izeddin I.; Khaidukov N.; Lee D.; Steckl A.; Vrielinck H. (12-01-2005. )On 2.7 ?m emission from Er-doped large bandgap hosts .Materials Research Society Symposium Proceedings, ,866 ,85-90

Dierolf V.; Fleischman Z.; Fujiwara T.; Munasinghe C.; Sandmann C.; Steckl A.; Wakahara A. (12-01-2005. )Combined excitation emission spectroscopy of europium ions in GaN and AlGaN films .Materials Research Society Symposium Proceedings, ,866 ,73-78

Dierolf V.; Everitt H.; Fleischman Z.; Hömmerich U.; Munasinghe C.; Nyein E.; Peng H.; Steckl A.; Zavada J. (12-01-2005. )GaN:Eu interrupted growth epitaxy (IGE): Thin film growth and electroluminescent devices .Materials Research Society Symposium Proceedings, ,866 ,41-52

Hömmerich U.; Munasinghe C.; Nyein E.; Steckl A.; Zavada J. (12-01-2005. )Excitation-wavelength dependent and time-resolved photoluminescence studies of europium doped GaN gr .Materials Research Society Symposium Proceedings, ,866 ,67-72

Dierolf V.; Fleischman Z.; Munasinghe C.; Sandmann C.; Steckl A. (12-01-2005. )Site selective spectroscopy of Eu-doped GaN .2005 Conference on Lasers and Electro-Optics, CLEO, ,1 ,306-308

Everitt H.; Lee C.; Lee D.; Steckl A.; Zavada J. (06-15-2004. )Temperature dependence of energy transfer mechanisms in Eu-doped GaN.Journal of Applied Physics, ,95 (12 ),7717-7724

Diggs D.; Grote J.; Hagen J.; Heckman E.; Kenneth Hopkins F.; Steckl A.; Yu Z. (12-01-2005. )Molecular binding and enhanced photoluminescence of bromocresol purple in marine derived DNA.Proceedings of SPIE - The International Society for Optical Engineering, ,5934 ,1-8

Clarson S.; Diggs D.; Grote J.; Hagen J.; He G.; Heckman E.; Kenneth Hopkins F.; Prasad P.; Steckl A.; Yaney P.; Zetts J.; Zheng Q. (12-01-2005. )DNA-based materials for electro-optic applications: Current status.Proceedings of SPIE - The International Society for Optical Engineering, ,5934 ,1-6

Heikenfeld J.; Steckl A. (11-01-2004. )Liquid light .Information Display, ,20 (11 ),26-31

Heikenfeld J.; Steckl A. (12-01-2005. )Electrowetting-based pixelation for light wave coupling displays.Digest of Technical Papers - SID International Symposium, ,36 (1 ),746-749

Heikenfeld J.; Steckl A. (12-01-2005. )Electrowetting light valves with greater than 80'% transmission, unlimited view angle, and video res .Digest of Technical Papers - SID International Symposium, ,36 (2 ),1674-1677

Hernandez S.; Katchkanov V.; Lee D.; Martin R.; Mosselmans J.; Nogales E.; O'Donnell K.; Steckl A. (01-01-2006. )Extended X-ray absorption fine structure studies of GaN epilayers doped with Er.Optical Materials, ,28 (6-7 ),785-789

Park J.; Steckl A. (01-01-2006. )Visible lasing from GaN:Eu optical cavities on sapphire substrates.Optical Materials, ,28 (6-7 ),859-863

Hömmerich U.; Jiang H.; Lee D.; Lin J.; Nepal N.; Nyein E.; Steckl A.; Zavada J. (01-01-2004. )Ultraviolet and blue emission properties of Tm doped AlGaN and AlN .OSA Trends in Optics and Photonics Series, ,96 A ,1281-1282

Park J.; Steckl A. (04-11-2006. )Site specific Eu 3+ stimulated emission in GaN host.Applied Physics Letters, ,88 (1 ),

Grote J.; Hagen J.; Li W.; Steckl A. (05-15-2006. )Enhanced emission efficiency in organic light-emitting diodes using deoxyribonucleic acid complex as.Applied Physics Letters, ,88 (17 ),

Grote J.; Hagen J.; Steckl A.; Yu Z. (05-23-2006. )Red photoluminescence emission of laser dye doped DNA and PMMA.Proceedings of SPIE - The International Society for Optical Engineering, ,6117 ,

Grote J.; Hagen J.; Li W.; Steckl A. (05-23-2006. )Red/Blue electroluminescence from Europium-doped organic light emitting diodes.Proceedings of SPIE - The International Society for Optical Engineering, ,6117 ,

Chen J.; Scofield J.; Steckl A. (12-01-2000. )Formation of SiC SOI structures by direct growth on insulating layers .Journal of the Electrochemical Society, ,147 (10 ),3840-3844

Allen S.; Heikenfeld J.; Jones R.; Li W.; Steckl A. (06-01-2006. )Maximizing Alq3 OLED internal and external efficiencies: Charge balanced devi.IEEE/OSA Journal of Display Technology, ,2 (2 ),143-151

Park J.; Piner E.; Rajagopal P.; Roberts J.; Steckl A. (01-01-2006. )Growth temperature dependence of optical modal gain and loss in GaN:Eu active medium on Si.Optics Express, ,14 (12 ),5307-5312

Birkhahn B.; Hömmerich U.; Seo J.; Steckl A.; Zavada J. (09-01-2006. )Green luminescence and excited state thermalization in Er-doped gallium nitride .Journal of the Korean Physical Society, ,49 (3 ),943-946

Steckl A. (12-01-2005. )Light emission from rare earth lumophores in inorganic and organic hosts.Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, ,2005 ,652-653

Abernathy C.; Birkhahnt R.; Hommerich U.; MacKenzie J.; Seo J.; Steckl A.; Zavada J. (01-01-2000. )Comparison of the optical properties of er3+ doped gallium nitride prepared b.Materials Research Society Symposium - Proceedings, ,595 ,W11651-W11656

Birkhahn R.; Garter M.; Scofield J.; Steckl A. (12-01-1999. )Visible and infrared rare-earth activated electroluminescence from erbium doped GaN .MRS Internet Journal of Nitride Semiconductor Research, ,4 (SUPPL. 1 ),

Birkhahn R.; Hudgins R.; Lee B.; Lee D.; Saleh A.; Steckl A.; Wilson R.; Zavada J. (12-01-1999. )Optical and structural properties of Er 3+doped GaN grown by MBE .MRS Internet Journal of Nitride Semiconductor Research, ,4 (SUPPL. 1 ),

Chyr I.; Steckl A. (12-01-1999. )Focused ion beam micromachining of GaN photonic devices .MRS Internet Journal of Nitride Semiconductor Research, ,4 (SUPPL. 1 ),

Chen J.; Loboda M.; Steckl A. (12-01-1998. )Heteroepitaxial growth of SiC on Si by gas source MBE with silacyclobutane .Materials Science Forum, ,264-268 (PART 1 ),239-242

Heikenfeld J.; Steckl A. (12-01-2003. )Inorganic EL displays at the crossroads .Information Display, ,19 (12 ),20-25

Dierolf V.; Fleischman Z.; Munasinghe C.; Sandmann C.; Steckl A. (12-01-2005. )Combined excitation emission spectroscopy of Eu-doped GaN.Conference on Lasers and Electro-Optics Europe - Technical Digest, ,

Saxena V.; Steckl A. (12-01-1998. )Chapter 3 Building Blocks for SiC Devices: Ohmic Contacts, Schottky Contacts, and p-n Junctions.Semiconductors and Semimetals, ,52 (C ),77-160

Heikenfeld J.; Lee D.; Steckl A. (01-21-2002. )Growth-temperature dependence of Er-doped GaN luminescent thin films.Applied Physics Letters, ,80 (3 ),344-346

Lee D.; Steckl A. (03-18-2002. )Lateral color integration on rare-earth-doped GaN electroluminescent thin films.Applied Physics Letters, ,80 (11 ),1888-1890

Lee D.; Steckl A. (02-04-2002. )Ga flux dependence of Er-doped GaN luminescent thin films.Applied Physics Letters, ,80 (5 ),728-730

Lee D.; Steckl A. (09-23-2002. )Enhanced blue and green emission in rare-earth-doped GaN electroluminescent devices by optical photo.Applied Physics Letters, ,81 (13 ),2331-2333

Abernathy C.; Birkhahn R.; Hömmerich U.; MacKenzie J.; Seo J.; Steckl A.; Zavada J. (12-01-2000. )Comparison of the optical properties of Er 3+ doped gallium nitride prepared .MRS Internet Journal of Nitride Semiconductor Research, ,5 (SUPPL. 1 ),

Dierolf V.; Fleischman Z.; Munasinghe C.; Sandmann C.; Steckl A. (01-01-2006. )Site selective spectroscopy of Eu-doped GaN .Optics InfoBase Conference Papers, ,

Grote J.; Hagen J.; Heckman E.; Hopkins F.; Steckl A.; Yaney P.; Zetts J. (01-01-2005. )DNA based photonic materials .Optics InfoBase Conference Papers, ,

Dierolf V.; Fleischman Z.; Munasinghe C.; Sandmann C.; Steckl A. (01-01-2005. )Site selective spectroscopy of Eu-doped GaN .Optics InfoBase Conference Papers, ,

Everitt H.; Lee D.; Munasinghe C.; Peng H.; Steckl A. (01-01-2005. )Relaxation dynamics in rare earth-doped GaN .Optics InfoBase Conference Papers, ,

Baker C.; Heikenfeld J.; Jones R.; Lee D.; Munasinghe C.; Pan M.; Park J.; Steckl A.; Wang Y.; Yu Z. (01-01-2003. )Rare earth doped GaN electroluminescent devices.IEEE International Symposium on Compound Semiconductors, Proceedings, ,2003-January ,147-148

Fitzgerald J.; Hömmerich U.; Lee D.; Nyein E.; Rack P.; Steckl A.; Zavada J. (01-01-2003. )Enhanced blue emission from tm-doped AlxGa1-xN electroluminescent thin films.2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings, ,5-6

Allen S.; Heikenfeld J.; Steckl A. (01-01-2003. )Hybrid inorganic/organic luminescent devices.2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings, ,38-39

Bender J.; Dorey R.; Heikenfeld J.; Munasinghe C.; Steckl A.; Wager J.; Whatmore R. (01-01-2003. )Improved luminance and efficiency of ZnS:Mn and GaN:Eu TDEL devices using PZT thick dielectric films.2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings, ,75-76

Birkhahn R.; Citrin P.; Northrup P.; Steckl A. (01-01-2000. )Local structure and bonding of luminescent Er in GaN: A contrast with Er in Si.IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, ,2000-January ,15-22

Gregorkiewicz T.; Steckl A.; Zavada J. (04-24-2001. )Preface: Rare earth doped semiconductors III.Materials Science and Engineering B: Solid-State Materials for Advanced Technology, ,81 (1-3 ),1-2

Clarson S.; Lee B.; Reinhardt B.; Sivaraman R.; Steckl A. (07-17-2000. )Photoluminescence studies and read/write process of a strong two-photon absorbing chromophore.Applied Physics Letters, ,77 (3 ),328-330

Everitt H.; Javada J.; Lee C.; Steckl A. (01-01-2003. )Temperature dependent visible photoluminescence of Eudoped GaN on silicon .OSA Trends in Optics and Photonics Series, ,88 ,999-1000

Heikenfeld J.; Hömmerich U.; Lee D.; Nyein E.; Steckl A.; Zavada J. (01-01-2003. )Characterization of the red light emission from Eu doped GaN .OSA Trends in Optics and Photonics Series, ,88 ,1005-1006

Gregorkiewicz T.; Izeddin I.; Lee D.; Steckl A. (10-01-2004. )Photoluminescence and excitation spectroscopy of the 1.5 ?m Er-related band in MBE-grown GaN layers.Superlattices and Microstructures, ,36 (4-6 ),701-705

Golecki I.; Li J.; Ning X.; Pirouz P.; Reidinger F.; Steckl A.; Wang L. (12-01-1993. )Structural characterization of nanometer SiC films grown on Si.Applied Physics Letters, ,62 (24 ),3135-3137

Mogren S.; Mogul H.; Steckl A.; Xu J. (12-01-1993. )Doping-induced selective area photoluminescence in porous silicon.Applied Physics Letters, ,62 (16 ),1982-1984

Devrajan J.; Stall R.; Steckl A.; Tran C. (01-01-1997. )Growth and characterization of GaN thin films SiC SOI substrates.Journal of Electronic Materials, ,26 (3 ),217-223

Steckl A.; Yih P. (12-01-1992. )Residue-free reactive ion etching of ?-SiC in CHF3/O 2.Applied Physics Letters, ,60 (16 ),1966-1968

Devrajan J.; Stall R.; Steckl A.; Tran C. (10-07-1996. )SiC rapid thermal carbonization of the (111)Si semiconductor-on-insulator structure and subsequent m.Applied Physics Letters, ,69 (15 ),2264-2266

Li J.; Mogren S.; Roth M.; Steckl A. (12-01-1992. )Atomic probe imaging of ?-SiC thin films grown on (100) Si.Applied Physics Letters, ,60 (12 ),1495-1497

Mogren S.; Mogul H.; Steckl A. (12-01-1992. )Localized fabrication of Si nanostructures by focused ion beam implantation.Applied Physics Letters, ,60 (15 ),1833-1835

Loboda M.; Steckl A.; Yuan C. (12-01-1994. )Effect of carbonization on the growth of 3C-SiC on Si (111) by silacyclobutane.Applied Physics Letters, ,64 (22 ),3000-3002

Devrajan J.; Gorin S.; Ivanova L.; Jackson H.; Steckl A.; Tlali S.; Tran C. (12-16-1996. )Characterization of 3C-SiC crystals grown by thermal decomposition of methyltrichlorosilane.Applied Physics Letters, ,69 (25 ),3824-3826

Chen P.; Steckl A. (12-01-1995. )Selective compositional mixing in GaAs/AlGaAs superlattice induced by low dose Si focused ion beam i.Journal of Applied Physics, ,77 (11 ),5616-5624

French B.; Nelson R.; Schecter D.; Steckl A. (01-01-2017. )APPLICATION OF CHARGE-COUPLED DEVICES TO INFRARED DETECTION AND IMAGING. 256-269

Chow T.; Lin C.; Steckl A. (01-01-1988. )Electrical Properties of Ga-Implanted Si p<sup>+</sup>-n Shallow Junctio.IEEE Electron Device Letters, ,9 (11 ),594-597

Pan W.; Steckl A. (01-01-1990. )Reactive Ion Etching of SiC Thin Films by Mixtures of Fluorinated Gases and Oxygen.Journal of the Electrochemical Society, ,137 (1 ),212-220

Lin C.; Steckl A. (01-01-1990. )Fabrication of sub-micrometer PMOSFETs with sub-100 nm p+-n shallow junctions.Solid State Electronics, ,33 (4 ),472-474

Li J.; Steckl A. (01-01-1992. )Epitaxial growth of ?-SiC on Si by RTCVD with C<inf>3</inf>H<inf&.IEEE Transactions on Electron Devices, ,39 (1 ),64-74

Boyd J.; Burnham R.; Chen P.; Choo A.; Jackson H.; Smith S.; Steckl A.; Weiss B. (12-01-1992. )Raman and photoluminescence characterization of AlGaAs multiple-quantum-well structures formed by fo .Proceedings of SPIE - The International Society for Optical Engineering, ,1678 ,154-158

Li J.; Steckl A.; Yih P. (01-01-1993. )Thickness Determination of SiC-on-Si Thin Films by Anisotropic Reactive Ion Etching and Preferential.Journal of the Electrochemical Society, ,140 (1 ),178-182

Boyd J.; Burnham R.; Chen P.; Choo A.; DeBrabander G.; Gupta V.; Jackson H.; Kumar M.; Smith S.; Steckl A. (01-01-1993. )Optical Channel Waveguides in AlGaAs Multiple-Quantum-Well Structures Formed by Focused Ion-Beam-Ind.IEEE Photonics Technology Letters, ,5 (4 ),435-438

Li J.; Steckl A. (01-01-1993. )Accurate Determination of Defects in the Gate Oxide of Si Metal Oxide Semiconductor Devices by Propa.Journal of the Electrochemical Society, ,140 (6 ),L89-L92

Steckl A.; Yih P. (01-01-1993. )Effects of Hydrogen Additive on Obtaining Residue-Free Reactive Ion Etching of (?-SiC in Fluorinated.Journal of the Electrochemical Society, ,140 (6 ),1813-1824

Mogul H.; Steckl A. (01-01-1993. )Electrical Properties of Si p<sup>+</sup>-n Junctions for Sub-0.25 ?m CM.IEEE Transactions on Electron Devices, ,40 (10 ),1823-1829

Li J.; Mogul H.; Steckl A.; Su J.; Xu J.; Yih P.; Yuan C. (12-01-1993. )Characterization of photoluminescence from anodically etched SiC/Si heterostructures .Materials Research Society Symposium Proceedings, ,298 ,361-366

Li J.; Steckl A. (12-01-1993. )AFM study of nucleation and void formation in SiC carbonization of Si .Materials Research Society Symposium Proceedings, ,280 ,739-744

Mogul H.; Steckl A.; Xu J. (12-01-1993. )Photoluminescence of chemically etched polycrystalline and amorphous Si thin films .Materials Research Society Symposium Proceedings, ,298 ,211-216

Steckl A.; Su J. (12-01-1993. )High voltage, temperature-hard 3C-SiC schottky diodes using All-Ni metallization .Technical Digest - International Electron Devices Meeting, ,695-998

Gosele U.; Steckl A.; Tong Q.; Yuan C. (12-01-1993. )Feasibility study of SiC on oxide by wafer bonding and layer transferring .IEEE International SOI Conference, ,60-61

Boyd J.; Cao X.; Chen P.; Choo A.; Jackson H.; Steckl A.; Tlali S. (01-01-1994. )Raman and photoluminescence characterization of FIB patterned AlGaAs/GaAs multiple quantum wells .Materials Research Society Symposium Proceedings, ,324 ,193-198

Steckl A.; Wang H.; Yan H. (01-01-1994. )Low energy ion beam assisted deposition of low resistivity aluminum using TMAA .Materials Research Society Symposium Proceedings, ,316 ,863-868

Chen P.; Steckl A. (01-01-1994. )Vacancy injection enhanced Al-Ga inter-diffusion in Si FIB implanted superlattice .Materials Research Society Symposium Proceedings, ,325 ,37-42

Li J.; Mogul H.; Steckl A.; Su J.; Xu J.; Yih P.; Yuan C. (12-01-1994. )Selective-area room temperature visible photoluminescence from SiC/Si heterostructures.Applied Physics Letters, ,64 (11 ),1419-1420

Mogul H.; Steckl A.; Xu J. (01-01-1994. )Crystallinity and Photoluminescence in Stain-Etched Porous Si.Journal of the Electrochemical Society, ,141 (3 ),674-679

Li J.; Steckl A.; Yih P. (01-01-1994. )SiC/Si Heterojunction Diodes Fabricated by Self-Selective and by Blanket Rapid Thermal Chemical Vapo.IEEE Transactions on Electron Devices, ,41 (3 ),281-287

Gösele U.; Loboda M.; Steckl A.; Tong Q.; Yuan C. (01-01-1994. )SiC Silicon-On-Insulator Structures by Direct Carbonization Conversion and Postgrowth from Silacyclo.Journal of the Electrochemical Society, ,141 (6 ),L66-L68

Steckl A.; Xu J. (12-01-1994. )Fabrication of visibly photoluminescent Si microstructures by focused ion beam implantation and wet .Applied Physics Letters, ,65 (16 ),2081-2083

Boyd J.; Burnham R.; Chen P.; De Brabander G.; Goo Choo A.; Jackson H.; Kumar M.; Smith S.; Steckl A. (01-01-1994. )Characterization of optical channel waveguides formed by fib induced compositional mixing in algaas .Superlattices and Microstructures, ,15 (4 ),421-425

Steckl A.; Xu J. (01-01-1994. )Visible Electroluminescence from Stain-Etched Porous Si Diodes.IEEE Electron Device Letters, ,15 (12 ),507-509

Steckl A.; Yih P. (01-01-1995. )Residue-Free Reactive Ion Etching of Silicon Carbide in Fluorinated Plasmas.Journal of the Electrochemical Society, ,142 (1 ),312-319

Li J.; Steckl A. (01-01-1995. )Nucleation and Void Formation Mechanisms in SiC Thin Film Growth on Si by Carbonization.Journal of the Electrochemical Society, ,142 (2 ),634-641

Steckl A.; Xu J. (01-01-1995. )Si Oxyhydrides on Stain-Etched Porous Si Thin Films and Correlation with Crystallinity and Photolumi.Journal of the Electrochemical Society, ,142 (5 ),L69-L71

Steckl A.; Xu J. (05-01-1995. )Stain-etched porous silicon visible light emitting diodes.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, ,13 (3 ),1221-1224

Boyd J.; Cao X.; Chen P.; Jackson H.; Kumar M.; Steckl A. (07-01-1995. )GaAs quantum well distributed Bragg reflection laser with AlGaAs/GaAs superlattice gratings fabricat.Applied Physics Letters, ,67 (2 ),179-181

Steckl A.; Yih P. (01-01-1995. )Residue-Free Reactive Ion Etching of 3C-SiC and 6H-SiC in Fluorinated Mixture Plasmas.Journal of the Electrochemical Society, ,142 (8 ),2853-2860

Hwang C.; Steckl A.; Vaudin M.; Wei L.; White G.; Xu J. (01-01-1995. )Heat conduction in silicon thin films: Effect of microstructure.Journal of Materials Research, ,10 (8 ),1889-1896

Boyd J.; Cao X.; Chen P.; Choo A.; Jackson H.; Kumar M.; Steckl A. (11-01-1995. )Review of focused ion beam implantation mixing for the fabrication of GaAs-based optoelectronic devi.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, ,13 (6 ),2570-2575

Steckl A. (01-01-1997. )Exploring the frontiers of optoelectronics with FIB technology .Advanced Workshop on Frontiers in Electronics, Proceedings, WOFE, ,47-50

Chaudhuri J.; Cheng X.; Steckl A.; Yuan C. (01-05-1997. )Highly perfect thin films of SiC: X-ray double crystal diffractometry and X-ray double crystal topog.Thin Solid Films, ,292 (1-2 ),1-6

Li J.; Steckl A. (12-01-1992. )Uniform ?-SiC thin-film growth on Si by low pressure rapid thermal chemical vapor deposition.Applied Physics Letters, ,60 (17 ),2107-2109

Li J.; Steckl A. (08-28-1992. )Rapid thermal chemical vapor deposition growth of nanometer-thin SiC on silicon.Thin Solid Films, ,216 (1 ),149-154

Saxena V.; Steckl A.; Yih P. (07-01-1997. )A review of SiC reactive ion etching in fluorinated plasmas .Physica Status Solidi (B) Basic Research, ,202 (1 ),605-624

Larkin D.; Powell J.; Roth M.; Steckl A. (12-01-1993. )Atomic probe microscopy of 3C SiC films grown on 6H SiC substrates.Applied Physics Letters, ,62 (20 ),2545-2547

Choyke W.; Devaty R.; Devrajan J.; Novak S.; Steckl A.; Yoganathan M. (01-01-1996. )Effect of annealing temperature on 1.5 ?m photoluminescence from Er-implanted 6H-SiC.Journal of Electronic Materials, ,25 (5 ),869-873

Mogul H.; Novak S.; Steckl A. (12-01-1993. )Shallow Si p+-n junctions fabricated by focused ion beam Ga + implantation through thin Ti and TiSi2.Journal of Applied Physics, ,74 (4 ),2318-2322

Mogul H.; Novak S.; Pawlik M.; Steckl A.; Webster G. (12-01-1992. )Electrochemical capacitance-voltage depth profiling of nanometer-scale layers fabricated by Ga+ focu.Applied Physics Letters, ,61 (5 ),554-556

Abernathy C.; Hite J.; Khanna R.; Park J.; Pearton S.; Steckl A.; Thaler G.; Zavada J. (10-09-2006. )Optical and magnetic properties of Eu-doped GaN.Applied Physics Letters, ,89 (13 ),

Kim D.; Steckl A. (02-05-2007. )Liquid-state field-effect transistors using electrowetting.Applied Physics Letters, ,90 (4 ),

Diggs D.; Grote J.; Hagen J.; Hopkins F.; Li W.; Nelson R.; Steckl A.; Zetts J. (12-01-2006. )Organic light emitting diode with a DNA biopolymer electron blocking layer.Proceedings of SPIE - The International Society for Optical Engineering, ,6333 ,

Hagen J.; Heikenfeld J.; Jones R.; Li W.; Steckl A. (03-01-2007. )Color tunable organic light emitting diodes using Eu complex doping.Solid-State Electronics, ,51 (3 ),500-504

Jones R.; Klotzkin D.; Li W.; Mu H.; Steckl A. (09-01-2007. )A comparative study of electrode effects on the electrical and luminescent characteristics of Alq<.Journal of Luminescence, ,126 (1 ),225-229

Grote J.; Klotzkin D.; Steckl A.; Yu Z.; Zhou Y. (04-30-2007. )Stimulated emission of sulforhodamine 640 doped DNA distributed feedback (DFB) laser devices.Proceedings of SPIE - The International Society for Optical Engineering, ,6470 ,

Steckl A. (01-01-2007. )DNA - A new material for photonics?.Nature Photonics, ,1 (1 ),3-5

Grote J.; Hagen J.; Klotzkin D.; Li W.; Steckl A.; Yu Z.; Zhou Y. (03-20-2007. )Photoluminescence and lasing from deoxyribonucleic acid (DNA) thin films doped with sulforhodamine.Applied Optics, ,46 (9 ),1507-1513

Allen S.; Steckl A. (06-01-2007. )ELiXIR - Solid-state luminaire with enhanced light extraction by internal reflection.IEEE/OSA Journal of Display Technology, ,3 (2 ),155-159

So F.; Steckl A. (06-01-2007. )Journal of Display Technology: Guest Editorial.IEEE/OSA Journal of Display Technology, ,3 (2 ),90

Park J.; Steckl A.; Zavada J. (07-01-2007. )Prospects for rare earth doped GaN lasers on Si.Materials Today, ,10 (7-8 ),20-27

Chow T.; Lin C.; Steckl A. (12-01-1988. )Si p+-n shallow junction fabrication using on-axis Ga +.Applied Physics Letters, ,52 (24 ),2049-2051

Grote J.; Hagen J.; Han D.; Hopkins F.; Jones R.; Kim D.; Li W.; Spaeth H.; Steckl A.; Yu Z. (12-01-2006. )Biopolymers in light emitting devices .SID Conference Record of the International Display Research Conference, ,25-27

Allen S.; Steckl A. (12-01-2006. )Efficiency and stability of perylene-based dyes for emissive displays .SID Conference Record of the International Display Research Conference, ,59-62

Everitt H.; Lee C.; Lee D.; Munasinghe C.; Peng H.; Steckl A. (10-22-2007. )Spectroscopic and energy transfer studies of Eu3+ centers in GaN.Journal of Applied Physics, ,102 (7 ),

Boyd J.; Cao X.; Chen P.; Jackson H.; Kumar M.; Steckl A. (12-01-1994. )GaAs quantum well distributed Bragg reflection laser with AlGaAs/GaAs superlattice gratings fabricat .Applied Physics Letters, ,67 ,1786

Chaudhuri J.; Loboda M.; Steckl A.; Thokala R.; Yuan C. (12-01-1995. )Reduced temperature growth of crystalline 3C-SiC films on 6H-SiC by chemical vapor deposition from s.Journal of Applied Physics, ,78 (2 ),1271-1273

Mogul H.; Steckl A.; Xu J. (12-01-1993. )Photoluminescence from stain-etched polycrystalline Si thin films.Applied Physics Letters, ,62 (17 ),2111-2113

Li J.; Loboda M.; Steckl A.; Yuan C. (12-01-1993. )Growth of crystalline 3C-SiC on Si at reduced temperatures by chemical vapor deposition from silacyc.Applied Physics Letters, ,63 (24 ),3347-3349

Bedair S.; El-Masry N.; Lee D.; Nepal N.; Steckl A.; Zavada J. (12-06-2007. )Correlation between compositional fluctuation and magnetic properties of Tm-doped AlGaN alloys.Applied Physics Letters, ,91 (22 ),

Chow T.; Lin C.; Steckl A. (12-01-1989. )Sub-100-nm p + -n shallow junctions fabricated by group III dual ion implanta.Applied Physics Letters, ,54 (18 ),1790-1792

Corelli J.; Higuchi-Rusli R.; Jin H.; Steckl A. (12-01-1988. )Characteristics and surface analysis of ion beam deposition from binary boron platinum (Pt.Journal of Applied Physics, ,63 (3 ),878-886

Park J.; Steckl A. (01-01-2008. )Effect of process conditions on gain and loss in GaN:Eu cavities on different substrates.Physica Status Solidi (A) Applications and Materials Science, ,205 (1 ),26-29

Abernathy C.; Hite J.; Park J.; Pearton S.; Steckl A.; Thaler G.; Zavada J. (12-01-2006. )Magnetic and optical properties of Eu-doped GaN .Materials Research Society Symposium Proceedings, ,955 ,94-96

Allen S.; Steckl A. (04-21-2008. )A nearly ideal phosphor-converted white light-emitting diode.Applied Physics Letters, ,92 (14 ),

Hagen J.; Jones R.; Li W.; Steckl A. (12-01-2006. )Organic photovoltaic devices with nanometer scale thickness by molecular beam deposition .2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006, ,2 ,764-765

Grote J.; Hagen J.; Han D.; Hopkins F.; Jones R.; Kim D.; Li W.; Spaeth H.; Steckl A.; Yu Z. (12-01-2006. )Challenges and opportunities for biophotonic devices in the liquid state and the solid state .2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006, ,1 ,159-161

Bickle J.; Iyer S.; Mantei T.; Papautsky I.; Schulz M.; Shanov V.; Smith L.; Steckl A. (12-01-2006. )Integration of nanoscale science and technology into undergraduate curricula .2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006, ,1 ,403-405

Dierolf V.; Fleischman Z.; Munasinghe C.; Steckl A.; Tafon P. (12-01-2007. )Identification of defect-trap-related europium sites in gallium nitride.Physica Status Solidi (C) Current Topics in Solid State Physics, ,4 (3 ),834-837

Lee D.; Nepal N.; Steckl A.; Zavada J. (08-25-2008. )Dynamics of ultraviolet emissions in Tm-doped AlN using above band gap excitation.Applied Physics Letters, ,93 (6 ),

Steckl A. (09-22-2008. )NanoBioMaterials - From BioLEDs to tissue engineering.Biennial University/Government/Industry Microelectronics Symposium - Proceedings, ,41-43

Herman S.; Kim D.; Steckl A. (09-22-2008. )I-V and gain characteristics of electrowetting-based liquid field effect transistor.Biennial University/Government/Industry Microelectronics Symposium - Proceedings, ,2-5

Bedford N.; Han D.; Steckl A. (09-22-2008. )Electrospun biopolymer-based micro/nanofibers.Biennial University/Government/Industry Microelectronics Symposium - Proceedings, ,139-141

Grote J.; Naik R.; Singh K.; Spaeth H.; Steckl A. (11-21-2008. )Chirality of sulforhodamine dye molecules incorporated in DNA thin films.Applied Physics Letters, ,93 (19 ),

Jones R.; Li W.; Spaeth H.; Steckl A. (12-11-2008. )Direct write electron beam patterning of DNA complex thin films.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, ,26 (6 ),2567-2571

Steckl A.; Wang R. (12-18-2008. )Effect of Si and Er co-doping on green electroluminescence from GaN:Er ELDs .Materials Research Society Symposium Proceedings, ,1068 ,83-88

Brown E.; Hommerich U.; Steckl A.; Wang R.; Zavada J. (03-09-2009. )Effect of Si codoping on Eu3+ luminescence in GaN.Journal of Applied Physics, ,105 (4 ),

Alves E.; Bodiou L.; Braud A.; Daudin B.; Doualan J.; Lorenz K.; Moncor? R.; Munasinghe C.; Park J.; Steckl A. (03-09-2009. )Optically active centers in Eu implanted, Eu in situ doped GaN, and Eu doped GaN quantum dots.Journal of Applied Physics, ,105 (4 ),

Jiang H.; Lee D.; Lin J.; Nepal N.; Sedhain A.; Steckl A.; Zavada J. (03-31-2009. )Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys.Applied Physics Letters, ,94 (11 ),

Everitt H.; Glinka Y.; Lee D.; Steckl A. (03-03-2009. )Effect of Tm3+ -induced defects on the photoexcitation energy relaxation in Tm-doped Alx Ga1-x N.Physical Review B - Condensed Matter and Materials Physics, ,79 (11 ),

Everitt H.; Foreman J.; Glinka Y.; Lee D.; Steckl A. (05-08-2009. )Direct and indirect photoluminescence excitation and ultraviolet emission from Tm-doped Al.Journal of Applied Physics, ,105 (8 ),

Bovero E.; Mahalingam V.; Munusamy P.; Steckl A.; Van Veggel F.; Wang R. (06-19-2009. )Optical and structural characterization of blue-emitting Mg2+- and Zn.Journal of Materials Chemistry, ,19 (23 ),3889-3894

Han D.; Steckl A. (08-18-2009. )Superhydrophobic and oleophobic fibers by coaxial electrospinning.Langmuir, ,25 (16 ),9454-9462

Linhard V.; Spaeth H.; Steckl A.; You H. (10-06-2009. )Role of surfactants in the interaction of dye molecules in natural DNA polymers.Langmuir, ,25 (19 ),11698-11702

Dierolf V.; Fleischman Z.; Munasinghe C.; Steckl A.; Wakahara A.; Zavada J. (11-01-2009. )Excitation pathways and efficiency of Eu ions in GaN by site-selective spectroscopy.Applied Physics B: Lasers and Optics, ,97 (3 ),607-618

Steckl A.; Wang R. (02-15-2010. )Effect of growth conditions on Eu3+ luminescence in GaN.Journal of Crystal Growth, ,312 (5 ),680-684

Nepal N.; Steckl A.; Wang R.; Zavada J. (02-05-2010. )Electrical and magnetic properties of GaN codoped with Eu and Si.Journal of Applied Physics, ,107 (1 ),

Steckl A.; You H. (07-12-2010. )Three-color electrowetting display device for electronic paper.Applied Physics Letters, ,97 (2 ),

Kim D.; Steckl A. (06-15-2010. )Complementary electrowetting devices on plasma-treated fluoropolymer surfaces.Langmuir, ,26 (12 ),9474-9483

Jones R.; Li W.; Spaeth H.; Steckl A. (08-09-2010. )Dose effects in electron beam irradiation of DNA-complex thin films.Applied Physics Letters, ,97 (6 ),

Boyce S.; Han D.; Steckl A. (12-01-2008. )Versatile core-sheath biofibers using coaxial electrospinning .Materials Research Society Symposium Proceedings, ,1094 ,33-38

Park J.; Steckl A. (12-01-2006. )Visible lasing on Si using rare earth doped GaN .IEEE International Conference on Group IV Photonics GFP, ,209-210

Steckl A.; Zhong M. (12-01-2010. )Eu-doped GaN films grown by phase shift epitaxy.Applied Physics Express, ,3 (12 ),

Kim D.; Steckl A. (11-24-2010. )Electrowetting on paper for electronic paper display.ACS Applied Materials and Interfaces, ,2 (11 ),3318-3323

Bedford N.; Steckl A. (08-25-2010. )Photocatalytic self cleaning textile fibers by coaxial electrospinning.ACS Applied Materials and Interfaces, ,2 (8 ),2448-2455

Kim D.; Steckl A.; You H. (04-11-2011. )Flexible electrowetting and electrowetting on flexible substrates.Proceedings of SPIE - The International Society for Optical Engineering, ,7956 ,

Gomez E.; Grote J.; Spaeth H.; Steckl A.; You H. (01-01-2011. )DNA as an optical material.Optics and Photonics News, ,22 (7-8 ),34-39

Gomez E.; Grote J.; Spaeth H.; Steckl A. (10-11-2011. )Fabrication of natural DNA-containing organic light emitting diodes.Proceedings of SPIE - The International Society for Optical Engineering, ,8103 ,

Filocamo S.; Han D.; Kirby R.; Steckl A. (12-28-2011. )Deactivating chemical agents using enzyme-coated nanofibers formed by electrospinning.ACS Applied Materials and Interfaces, ,3 (12 ),4633-4639

Punnamaraju S.; Steckl A.; You H. (05-22-2012. )Triggered release of molecules across droplet interface bilayer lipid membranes using photopolymeriz.Langmuir, ,28 (20 ),7657-7664

Bedford N.; Dionysiou D.; Han C.; Pelaez M.; Steckl A. (07-07-2012. )Photocatalytic cellulosic electrospun fibers for the degradation of potent cyanobacteria toxin micro.Journal of Materials Chemistry, ,22 (25 ),12666-12674

Steckl A.; You H. (09-01-2012. )Electrowetting on flexible substrates.Journal of Adhesion Science and Technology, ,26 (12-17 ),1931-1939

Bedford N.; Dickerson M.; Drummy L.; Durstock M.; Koerner H.; Naik R.; Singh K.; Steckl A.; Vasudev M. (09-01-2012. )Nanofi ber-based bulk-heterojunction organic solar cells using coaxial electrospinning.Advanced Energy Materials, ,2 (9 ),1136-1144

Steckl A. (02-08-2013. )Circuits on cellulose.IEEE Spectrum, ,50 (2 ),48-61

Steckl A.; Su J. (12-01-1994. )SiC devices for space electronics: Phase I-high voltage, temperature hard contacts.SAE Technical Papers, ,

Choi S.; Fraiwan A.; Han D.; Hassett D.; Steckl A.; Sundermier S. (06-01-2013. )Enhanced performance of micro-electro-mechanical-systems (MEMS) microbial fuel cells using electrosp.Fuel Cells, ,13 (3 ),336-341

Steckl A.; You H. (08-26-2013. )Versatile electrowetting arrays for smart window applications-from small to large pixels on fixed an.Solar Energy Materials and Solar Cells, ,117 ,544-548

Han D.; Steckl A. (08-28-2013. )Triaxial electrospun nanofiber membranes for controlled dual release of functional molecules.ACS Applied Materials and Interfaces, ,5 (16 ),8241-8245

Steckl A.; You H. (05-01-2013. )Lightweight electrowetting display on ultra-thin glass substrate.Journal of the Society for Information Display, ,21 (5 ),192-197

Gomez E.; Grote J.; Joyce D.; Kim S.; Ouchen F.; Steckl A.; Venkat N.; Williams A.; Yaney P. (12-11-2013. )Investigation of DNA nucleobases - Thin films for potential applications in electronics and photonic.Proceedings of SPIE - The International Society for Optical Engineering, ,8817 ,

Brown A.; Kong W.; Roberts J.; Steckl A.; Zhong M. (01-06-2014. )P-type GaN grown by phase shift epitaxy.Applied Physics Letters, ,104 (1 ),

Hagen J.; Steckl A.; You H.; Zocco A. (03-07-2014. )Pentacene organic thin-film transistors on flexible paper and glass substrates.Nanotechnology, ,25 (9 ),

Gomez E.; Purandare S.; Steckl A. (03-07-2014. )High brightness phosphorescent organic light emitting diodes on transparent and flexible cellulose f.Nanotechnology, ,25 (9 ),

Steckl A.; You H. (10-01-2013. )Electrowetting on non-fluorinated hydrophobic surfaces.Journal of the Society for Information Display, ,21 (10 ),411-416

Gomez E.; Grote J.; Heckman E.; Johnson L.; Joyce D.; Kajzar F.; Kim S.; Ouchen F.; Pawlicka A.; Prasad P.; Rau I.; Steckl A.; Venkat N.; Williams A.; Yaney P. (01-01-2014. )Latest advances in biomaterials: From deoxyribonucleic acid to nucleobases.Proceedings of SPIE - The International Society for Optical Engineering, ,8983 ,

Blumenschein N.; Caggioni M.; Han D.; Steckl A. (06-11-2014. )Magnetic particles as liquid carriers in the microfluidic lab-in-tube approach to detect phase chang.ACS Applied Materials and Interfaces, ,6 (11 ),8066-8072

Han D.; Li H.; Pauletti G.; Steckl A. (10-21-2014. )Blood coagulation screening using a paper-based microfluidic lateral flow device.Lab on a Chip, ,14 (20 ),4035-4041

Chu S.; Steckl A. (01-01-1988. )The Effect of Trench-Gate-Oxide Structure on EPROM Device Operation.IEEE Electron Device Letters, ,9 (6 ),284-286

Adusumilli S.; Call D.; Choi S.; Fraiwan A.; Han D.; Steckl A.; Westgate C. (01-01-2014. )Microbial power-generating capabilitie on micro-/nano-structured anodes in micro-sized microbial fue.Fuel Cells, ,14 (6 ),801-809

Gomez E.; Steckl A. (03-18-2015. )Improved performance of OLEDs on cellulose/epoxy substrate using adenine as a hole injection layer.ACS Photonics, ,2 (3 ),439-445

Gomez E.; Grote J.; Steckl A.; Venkatraman V. (11-24-2014. )DNA bases thymine and adenine in bio-organic light emitting diodes.Scientific Reports, ,4 ,

Steckl A.; Venkatraman V. (12-05-2015. )Integrated OLED as excitation light source in fluorescent lateral flow immunoassays.Biosensors and Bioelectronics, ,74 ,150-155

Gomez E.; Grote J.; Heckman E.; Johnson L.; Joyce D.; Kajzar F.; Kim S.; Ouchen F.; Pawlicka A.; Prasad P.; Rau I.; Steckl A.; Venkat N.; Williams A.; Yaney P. (01-01-2015. )Bio-based materials for electronic applications .Nonlinear Optics Quantum Optics, ,46 (2-4 ),199-225

Han D.; Li H.; Pauletti G.; Steckl A. (01-01-2014. )Point-of-care blood coagulation monitoring using lateral flow device .18th International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2014, ,1575-1577

Han D.; Heineman W.; Rusinek C.; Steckl A.; Wang T.; Zhao D. (09-15-2015. )Electrospun Carbon Nanofiber Modified Electrodes for Stripping Voltammetry.Analytical Chemistry, ,87 (18 ),9315-9321

Blumenschein N.; Han D.; Steckl A. (09-04-2015. )Phase diagram characterization using magnetic beads as liquid carriers.Journal of Visualized Experiments, ,2015 (103 ),

Gomez E.; Grote J.; Steckl A.; Venkatraman V. (01-01-2015. )Organic Light-Emitting Diodes: Exploring the Potential of Nucleic Acid Bases in Organic Light Emitti.Advanced Materials, ,27 (46 ),7680

Gomez E.; Grote J.; Steckl A.; Venkatraman V. (01-01-2015. )Exploring the Potential of Nucleic Acid Bases in Organic Light Emitting Diodes.Advanced Materials, ,27 (46 ),7552-7562

Filocamo S.; Han D.; Sherman S.; Steckl A. (04-15-2017. )Long-term antimicrobial effect of nisin released from electrospun triaxial fiber membranes.Acta Biomaterialia, ,53 ,242-249

Ayres N.; Chai Q.; Han D.; Steckl A.; Yu X. (04-05-2017. )Stimuli-Responsive Self-Immolative Polymer Nanofiber Membranes Formed by Coaxial Electrospinning.ACS Applied Materials and Interfaces, ,9 (13 ),11858-11865

Han D.; Hegener M.; Li H.; Pauletti G.; Steckl A. (03-01-2017. )Flow reproducibility of whole blood and other bodily fluids in simplified no reaction lateral flow a.Biomicrofluidics, ,11 (2 ),

Han D.; Kofuji S.; Sasaki A.; Sasaki M.; Steckl A.; Yoshino H. (08-01-2017. )In-vitro evaluation of MPA-loaded electrospun coaxial fiber membranes for local treatment of gliobla.Journal of Drug Delivery Science and Technology, ,40 ,45-50

Han D.; Hegener M.; Li H.; Pauletti G.; Steckl A. (09-01-2017. )Point-of-care coagulation monitoring: first clinical experience using a paper-based lateral flow dia.Biomedical Microdevices, ,19 (3 ),

Steckl A.; Venkatraman V. (12-15-2017. )Quantitative Detection in Lateral Flow Immunoassay Using Integrated Organic Optoelectronics.IEEE Sensors Journal, ,17 (24 ),8343-8349

Han D.; Steckl A. (12-13-2017. )Selective pH-Responsive Core-Sheath Nanofiber Membranes for Chem/Bio/Med Applications: Targeted Deli.ACS Applied Materials and Interfaces, ,9 (49 ),42653-42660

Kozak K.; Liedert R.; Steckl A.; Venkatraman V. (12-01-2016. )Integrated NFC power source for zero on-board power in fluorescent paper-based lateral flow immunoas.Flexible and Printed Electronics, ,1 (4 ),

Han D.; Ray P.; Steckl A. (12-01-2016. )Urine-powered (galvanic) electric cell and sensor on paper substrate.Flexible and Printed Electronics, ,1 (4 ),

Han D.; Li H.; Pauletti G.; Steckl A. (01-01-2018. )Engineering a simple lateral flow device for animal blood coagulation monitoring.Biomicrofluidics, ,12 (1 ),

Han D.; Steckl A.; Tirgar A. (06-06-2018. )Absorption of Ethylene on Membranes Containing Potassium Permanganate Loaded into Alumina-Nanopartic.Journal of Agricultural and Food Chemistry, ,66 (22 ),5635-5643

Han D.; Hegener M.; Li H.; Pauletti G.; Steckl A. (06-28-2018. )Correction: Correcting the effect of hematocrit in whole blood coagulation analysis on paper-based l.Analytical Methods, ,10 (24 ),2939

Han D.; Hegener M.; Li H.; Pauletti G.; Steckl A. (06-28-2018. )Correcting the effect of hematocrit in whole blood coagulation analysis on paper-based lateral flow .Analytical Methods, ,10 (24 ),2869-2874

Ray P.; Steckl A. (10-26-2018. )Stress Biomarkers in Biological Fluids and Their Point-of-Use Detection.ACS Sensors, ,3 (10 ),2025-2044

Li H.; Steckl A. (01-02-2019. )Paper Microfluidics for Point-of-Care Blood-Based Analysis and Diagnostics.Analytical Chemistry, ,91 (1 ),352-371

Dalirirad S.; Steckl A. (03-15-2019. )Aptamer-based lateral flow assay for point of care cortisol detection in sweat.Sensors and Actuators, B: Chemical, ,79-86

Han D.; Hegener M.; Li H.; Pauletti G.; Steckl A. (01-01-2018. )Cellulose-based lateral flow device for low-cost point-of-care blood coagulation monitoring .International Conference on Nanotechnology for Renewable Materials 2018, ,1 ,255-264

Adusumilli S.; Call D.; Choi S.; Fraiwan A.; Han D.; Steckl A.; Westgate C. (01-01-2014. )Micro-/nano-structured anodes for enhanced performance of micro-sized microbial fuel cells .Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop, ,203-206

Ray P.; Steckl A. (05-24-2019. )Label-Free Optical Detection of Multiple Biomarkers in Sweat, Plasma, Urine, and Saliva.ACS Sensors, ,4 (5 ),1346-1357

Han D.; Steckl A. (01-01-2019. )Coaxial Electrospinning Formation of Complex Polymer Fibers and their Applications.ChemPlusChem, ,

Chyan O.; Franh D.; Hubbard A.; Li J.; Steckl A. (01-01-1994. )Measurement of complete Auger electron emission angular distributions from ?-SiC films on Si(100).Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, ,12 (2 ),457-464

Carlson R.; McDonald J.; Neugebauer C.; Steckl A. (01-01-1986. )Multilevel interconnections for wafer scale integration.Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, ,4 (6 ),3127-3138

Das P.; Steckl A. (12-01-1970. )Current oscillations in cadmium sulphide with optically polished parallel surfaces.Applied Physics Letters, ,16 (4 ),163-165

Arellano M.; Das P.; Steckl A. (01-01-1972. )ACOUSTO-ELECTRIC CURRENT STEPS IN OPTICALLY POLISHED PARALLEL CADMIUM SULPHIDE. 168-170

Das P.; Steckl A. (01-01-1972. )MODEL OF THE ACOUSTOELECTRIC OSCILLATOR: FIELD-INDUCED FREQUENCY MODULATION, HARMONIC AND OFF-AXIS G .158-164

Steckl A. (01-01-1976. )Infrared charge coupled devices.Infrared Physics, ,16 (1-2 ),65-73

Steckl A. (01-01-1976. )Infrared optical properties of sputtered In2-x Snx O&l.Infrared Physics, ,16 (1-2 ),145-147

French B.; Gudmundsen R.; Nelson R.; Schechter D.; Steckl A. (01-01-1975. )Application of Charge-Coupled Devices to Infrared Detection and Imaging.Proceedings of the IEEE, ,63 (1 ),67-74

Steckl A. (01-01-1975. )INJECTION EFFICIENCY IN HYBRID IRCCD'S. 85-91

Steckl A. (01-01-1975. )LOW TEMPERATURE SILICON CCD OPERATION. 383-388

Elabd H.; Steckl A.; Vidinski W. (01-01-1980. )Effect of substrate orientation on the properties of the Si/PbS heterojunction.Solar Cells, ,1 (2 ),199-208

Motamedi M.; Steckl A.; Tam K. (01-01-1979. )READ-OUT CHARACTERISTICS OF THE PbS-Si HJ DETECTOR. Advances in Chemistry Series, ,650-654

Brown D.; Chow T.; Motamedi M.; Steckl A. (01-01-1979. )MoSi2-GATE MOSFET`s FOR VLSI. Advances in Chemistry Series, ,458-461

Sheu S.; Steckl A. (01-01-1979. )FREQUENCY CHARACTERISTICS OF p-n PbS-Si HETEROJUNCTION IR DETECTORS. Infrared Physics, ,351-353

Elabd H.; Steckl A. (12-01-1980. )Structural and compositional properties of the PbS-Si heterojunction.Journal of Applied Physics, ,51 (1 ),726-737

Elabd H.; Motamedi M.; Sheu S.; Steckl A.; Tam K. (01-01-1980. )The Optical and Detector Properties of the PbS-Si Heterojunction.IEEE Transactions on Electron Devices, ,27 (1 ),126-133

Motamedi M.; Steckl A.; Tam K. (01-01-1980. )Design and Evaluation of Ion-Implanted CMOS Structures.IEEE Transactions on Electron Devices, ,27 (3 ),578-583

Elabd H.; Steckl A. (05-01-1980. )Auger analysis of the PbS-Si heterojunction.Journal of Electronic Materials, ,9 (3 ),525-549

Mohammed G.; Steckl A. (12-01-1980. )The effect of ambient atmosphere in the annealing of indium tin oxide films.Journal of Applied Physics, ,51 (7 ),3890-3895

Sheu S.; Steckl A. (01-01-1980. )The a.c. admittance of the p-n PbS?Si heterojunction.Solid-State Electronics, ,23 (7 ),715-720

Brown D.; Chow T.; Garfinkel M.; Steckl A. (12-01-1980. )Silane silicidation of Mo thin films.Journal of Applied Physics, ,51 (11 ),5981-5985

Smith G.; Steckl A. (01-01-1980. )TWO-DIMENSIONAL INTEGRATED CIRCUIT PROCESS MODELING PROGRAM - RECIPE. Technical Digest - International Electron Devices Meeting, ,227-230

Steckl A.; Tiemann J.; Vogelsong T. (01-01-1980. )CHARGE DOMAIN ANALOG SAMPLED DATA FILTERS. EASCON Record: IEEE Electronics and Aerospace Systems Convention, ,140-145

Chow T.; Steckl A. (01-01-1980. )PLANAR PLASMA ETCHING OF Mo AND MoSi2 USING NF3. Technical Digest - International Electron Devices Meeting, ,149-151

Steckl A.; Zetterlund B. (01-01-1980. )LOW TEMPERATURE RECOMBINATION LIFETIME IN Si MOSFET's. Technical Digest - International Electron Devices Meeting, ,284-288

Steckl A.; Tam K. (01-01-1981. )Integrated PbS-Si IR Detector Read-Out.IEEE Electron Device Letters, ,EDL-2 (5 ),130-132

Brown D.; Chow T.; Steckl A. (12-01-1981. )The effect of annealing on the properties of silicidized molybdenum thin films.Journal of Applied Physics, ,52 (10 ),6331-6336

Chow T.; Okazaki S.; Steckl A. (01-01-1981. )Edge-Defined Patterning of Hyperfine Refractory Metal Silicide MOS Structures.IEEE Transactions on Electron Devices, ,28 (11 ),1364-1368

Gutmann R.; McDonald J.; Steckl A. (01-01-1981. )VLSI DESIGN AUTOMATION AND INTERACTIVE MODELING FOR ELECTRON BEAM LITHOGRAPHY. Journal of macromolecular science. Chemistry, ,172-176

Corelli J.; Steckl A.; Vidinski W. (01-01-1982. )Photoexcitation properties of infrared active defects induced by neutron irradiation in silicon.Journal of Nuclear Materials, ,108-109 (C ),693-699

Smith G.; Steckl A. (01-01-1982. )RECIPE—A Two-Dimensional VLSI Process Modeling Program.IEEE Transactions on Electron Devices, ,29 (2 ),216-221

Chow T.; Steckl A. (01-01-1982. )Refractory MoSi2 and MoSi2/Polysilicon Bulk CMOS Circuits.IEEE Electron Device Letters, ,3 (2 ),37-40

Steckl A.; Tiemann J.; Vogelsong T. (01-01-1982. )Charge Domain Recursive Filters.IEEE Journal of Solid-State Circuits, ,17 (3 ),597-605

Chow T.; Steckl A. (12-01-1982. )Plasma etching of sputtered Mo and MoSi2 thin films in NF 3.Journal of Applied Physics, ,53 (8 ),5531-5540

Chow T.; Rude C.; Steckl A. (12-01-1982. )Characterization of NbSi2 thin films.Journal of Applied Physics, ,53 (8 ),5703-5709

Bencuya S.; Steckl A.; Tiemann J.; Vogelsong T. (01-01-1982. )Dynamic Packet Splitting in Charge Domain Devices.IEEE Electron Device Letters, ,3 (9 ),268-270

Bencuya S.; STeckl A.; Vogelsong T. (12-01-1982. )COEFFICIENT ACCURACY FOR CDD PACKET SPLITTING TECHNIQUES. Technical Digest - International Electron Devices Meeting, ,123-126

Corelli J.; Steckl A.; Vidinski W. (12-01-1982. )CORRELATION OF STRESS-SYMMETRY EXPERIMENTS WITH PHOTOEXCITATION AND DECAY PROCESSES FOR INFRARED-ACT .Electrochemical Society Extended Abstracts, ,82-2 ,361-362

Chow T.; Steckl A. (12-01-1982. )DEVELOPMENT OF REFRACTORY GATE METALLIZATION FOR VLSI. Electrochemical Society Extended Abstracts, ,82-2 ,353-354

Follett D.; Liu W.; Moore J.; Steckl A.; Weiss K. (12-01-1982. )POLARITY REVERSAL OF PMMA BY TREATMENT WITH CHLOROSILANES. Electrochemical Society Extended Abstracts, ,82-2 ,321-322

Steckl A.; Tiemann J.; Vogelsong T. (12-01-1982. )HIGH-Q BANDPASS FILTER DEMONSTRATING CHARGE DOMAIN TECHNOLOGY. Technical Digest - International Electron Devices Meeting, ,123-126

Chow T.; Hamzeh K.; Steckl A. (12-01-1983. )Thermal oxidation of niobium silicide thin films.Journal of Applied Physics, ,54 (5 ),2716-2719

Corelli J.; Steckl A.; Vidinski W. (12-01-1983. )Correlation of photoluminescence and symmetry studies with photoexcitation and decay processes of in.Journal of Applied Physics, ,54 (7 ),4097-4103

Chow D.; King D.; McDonald J.; Molnar K.; Smith W.; Steckl A. (01-01-1983. )IMAGE PROCESSING APPROACH TO FAST, EFFICIENT PROXIMITY CORRECTION FOR ELECTRON BEAM LITHOGRAPHY.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, ,1 (4 ),1383-1390

Chow T.; Steckl A. (01-01-1983. )Refractory Metal Silicides: Thin-Film Properties and Processing Technology.IEEE Transactions on Electron Devices, ,30 (11 ),1480-1497

Chow T.; Steckl A. (12-01-1983. )REVIEW OF REFRACTORY GATES FOR MOS VLSI. Technical Digest - International Electron Devices Meeting, ,513-517

Chow T.; Steckl A. (12-01-1983. )REVIEW OF PLASMA ETCHING OF REFRACTORY METAL SILICIDES. Proceedings - The Electrochemical Society, ,83-10 ,362-381

Chow D.; King D.; McDonald J.; Steckl A. (12-01-1983. )COMPARISON BETWEEN HAAR AND WALSH TRANSFORM 'THINNING' OF THE PATTERN DATABASE FOR PROXIMITY EFFECT .65-74

Chow T.; Katz W.; Lu W.; Steckl A. (12-01-1983. )THERMAL OXIDATION OF SPUTTERED SILICON CARBIDE THIN FILMS. Electrochemical Society Extended Abstracts, ,83-1 ,133

Chow T.; Steckl A. (12-01-1983. )REVIEW OF PLASMA ETCHING OF REFRACTORY METAL SILICIDES. Electrochemical Society Extended Abstracts, ,83-1 ,328-329

Bourgeois M.; Chow D.; Haslam M.; King D.; McDonald J.; Steckl A. (01-01-1984. )TWO-DIMENSIONAL HAAR THINNING FOR DATA BASE COMPACTION IN FOURIER PROXIMITY CORRECTION FOR ELECTRON .Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, ,3 (1 ),165-173

Berry I.; Corelli J.; Hamadeh H.; Steckl A. (01-01-1984. )FOCUSED Ga** plus BEAM DIRECT IMPLANTATION FOR Si DEVICE FABRICATION.Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, ,3 (1 ),91-93

Steckl A.; Tiemann J.; Vogelsong T. (01-01-1985. )Charge-Domain Integrated Circuits for Signal Processing.IEEE Journal of Solid-State Circuits, ,20 (2 ),562-570

Corelli J.; Liu W.; Moore J.; Silverman J.; Steckl A. (12-01-1984. )Polymethyl methacrylate resist sensitivity enhancement in x-ray lithography by in situ polymerizatio.Applied Physics Letters, ,44 (10 ),973-975

Corelli J.; Liu W.; Moore J.; Randall J.; Steckl A.; Tarro R.; Warden J. (08-01-1984. )RESIST SENSITIVITY ENHANCEMENT IN MICROLITHOGRAPHY BY IN-SITU POLYMERIZATION. American Chemical Society, Polymer Preprints, Division of Polymer Chemistry, ,25 (2 ),105-106

Lu W.; Steckl A. (01-01-1984. )Thermal Oxidation of Sputtered Silicon Carbide Thin Films.Journal of the Electrochemical Society, ,131 (8 ),1907-1914

Bencuya S.; Steckl A. (01-01-1984. )Charge-Packet Splitting In Charge-Domain Devices.IEEE Transactions on Electron Devices, ,31 (10 ),1494-1501

McDonald J.; Rogers E.; Rose K.; Steckl A. (01-01-1984. )TRIALS OF WAFER-SCALE INTEGRATION.IEEE Spectrum, ,21 (10 ),32-39

Corelli J.; Liu W.; Moore J.; Steckl A. (12-01-1984. )IMAGE ENHANCEMENT IN HIGH-RESLUTION LITHOGRAPHY THROUGH POLYMER GRAFTING TECHNIQUES. Digest of Technical Papers - Symposium on VLSI Technology, ,60-61

Chow T.; Lu W.; Steckl A. (01-01-1985. )COMPLETELY CONSUMED CARBIDE (C**3) - A NEW PROCESS FOR DIELECTRIC ISOLATION. Electrochemical Society Extended Abstracts, ,85-1 ,327-329

Chow T.; Lu W.; Steckl A. (01-01-1985. )COMPLETELY CONSUMED CARBIDE (C**3) - A NEW PROCESS FOR DIELECTRIC ISOLATION. Proceedings - The Electrochemical Society, ,85-5 ,244-252

Chow T.; Steckl A. (01-01-1985. )CRITIQUE OF REFRACTORY GATE APPLICATIONS FOR MOS VLSI. VLSI Electronics, Microstructure Science, ,9 ,37-91

Corelli J.; Kumar S.; Moore J.; Steckl A.; Tarro R.; Warden J. (12-01-1985. )ELECTRON SPIN RESONANCE STUDIES OF IRRADIATED POLYMETHYLMETHACRYLATE (PMMA). 537-544

Bourgeois M.; Elminyawi I.; King D.; McDonald J.; Morgenstern J.; Steckl A.; Yemc D. (01-01-1986. )FLIP-AND-SHIFT SIGNAL ENHANCEMENT APPLICATION FOR A PREDICTIVE ELECTRON-BEAM PATTERN REGISTRATION MO.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, ,4 (1 ),273-279

Choi J.; Corelli J.; Kim S.; Moore J.; Pulver D.; Randall J.; Steckl A. (01-01-1986. )OPTIMIZATION OF SOLVENT DEVELOPMENT IN RADIATION INDUCED GRAFT LITHOGRAPHY OF POLY(METHYLMETHACRYLAT.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, ,4 (1 ),403-408

Chu S.; Clark W.; Corelli J.; Morris W.; Rensch D.; Reuss R.; Steckl A. (01-01-1986. )COMPARISON OF NPN TRANSISTORS FABRICATED WITH BROAD BEAM AND SPATIAL PROFILING USING FOCUSED BEAM IO.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, ,4 (1 ),375-379

Cadien K.; Lu W.; Steckl A.; Sugiura J. (01-01-1986. )REACTIVE ION ETCHING OF SiC THIN FILMS USING FLUORINATED GASES.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, ,4 (1 ),349-354

Corelli J.; Murarka S.; Steckl A. (01-01-1986. )IN-SITU PROCESSING OF SEMICONDUCTOR DEVICES AND CUSTOM INTEGRATED CIRCUITS. Proceedings of the Custom Integrated Circuits Conference, ,586-590

Lu W.; Steckl A. (01-01-1986. )Electrical Characteristics of Si Devices Fabricated with Completely Consumed Carbide (C3) Dielectric.Journal of the Electrochemical Society, ,133 (6 ),1180-1185

Steckl A. (01-01-1986. )Particle-Beam Fabrication and In Situ Processing of Integrated Circuits.Proceedings of the IEEE, ,74 (12 ),1753-1774

Chu S.; Corelli J.; Lin C.; Steckl A. (01-01-1986. )Simulation of graded-base bipolar transistor characteristics fabricated with a focused ion beam.Microelectronic Engineering, ,5 (1-4 ),179-189

Balakrishnan S.; Corelli J.; Jin H.; Steckl A. (01-01-1986. )Micromachining of polyimide films with focused ion beams.Microelectronic Engineering, ,5 (1-4 ),461-462

Corelli J.; Pulver D.; Randall J.; Steckl A. (01-01-1987. )Ultralow dose effects in ion-beam induced grafting of polymethylmethacrylate (PMMA).Nuclear Inst. and Methods in Physics Research, B, ,19-20 (PART 2 ),1009-1012

Steckl A.; Zetterlund B. (01-01-1987. )Low-Temperature Operation of Silicon Surface-Channel Charge-Coupled Devices.IEEE Transactions on Electron Devices, ,34 (1 ),39-51

Bencuya S.; Burkey B.; Steckl A. (01-01-1987. )Impact of edge effects on charge-packet-splitting accuracy.Solid State Electronics, ,30 (3 ),299-305

Pan W.; Steckl A. (12-01-1987. )ANISOTROPIC AND SELECTIVE REACTIVE ION ETCHING OF SiC IN CHF//3 AND OXYGEN PLASMA. Materials Research Society Symposia Proceedings, ,76 ,157-162

Chow T.; Steckl A. (12-01-1980. )Plasma etching characteristics of sputtered MoSi2 films.Applied Physics Letters, ,37 (5 ),466-468

Motamedi M.; Steckl A.; Tam K. (12-01-1979. )Direct injection readout of the p-n PbS-Si heterojunction detector.Applied Physics Letters, ,35 (7 ),537-539

Chow T.; Steckl A. (12-01-1980. )Size effects in MoSi2-gate MOSFET's.Applied Physics Letters, ,36 (4 ),297-299

Steckl A.; Zetterlund B. (12-01-1981. )Low temperature recombination lifetime in Si metal oxide semiconductor field effect transistors.Applied Physics Letters, ,39 (2 ),155-156

Cadien K.; Corelli J.; Higuchi-Rusli R.; Steckl A. (07-01-1987. )Development of test bed system for high melting temperature alloy fabrication and mass spectroscopy .Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, ,5 (4 ),2073-2076

Steckl A. (01-01-1979. )Call for Papers.Physics Today, ,32 (4 ),15

Corelli J.; Hiouchi-Rusli R.; Jin H.; Steckl A. (07-01-1987. )Surface Analysis Of Palladium Boride Liquid Metal Ion Beam Deposition On Silicon Single-Crystal Soli.Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, ,5 (4 ),1362-1366

Balakrishnan S.; Corelli J.; Jin H.; Lin H.; McDonald J.; Rajapakse R.; Selvaraj R.; Steckl A. (06-30-1987. )Optimized focused ion beam inspection and repair of wafer scale interconnections.Proceedings of SPIE - The International Society for Optical Engineering, ,773 ,206-215

Steckl A. (01-01-1977. )Low temperature signal linearity and harmonic distortion in charge coupled devices .European Solid-State Circuits Conference, ,1977-September ,97-100